• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.23-29
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• 2005

This paper presents the characteristics of leakage currents flowing through ZinC Oxide(ZnO) surge arrester blocks under mixed direct and 60 Hz alternating voltages. A mixed voltage, in which an alternating voltage is superimposed upon a direct voltage, appears on the HVDC system network. The mixed direct and alternating voltage generator with a peak open-circuit of 10 kV was designed and fabricated. The leakage currents and V-I curves for the fine and used ZnO surge arrester blocks were measured as a function of the voltage ratio k, where the voltage ratio k is defined as the ratio of the peak of alternating voltage to the peak of the mixed voltages. The resistive component in the leakage current in the low conduction region is significantly increased with increasing the voltage ratio k. The V-I characteristic curves for the mixed voltages lies between the direct and alternating characteristics, and the cross-over phenomenon in the high conduction region was appeared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.546-549
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• 2003

The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a Matlab program.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.622-627
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• 2005

In this study, electrical properties of self-assembled dipyridinium dithioacetate molecule onto the Au(111) substrate is observed using Scanning Tunneling Microscopy(STM) by vortical structure of STM probe. At first, the Au(111) substrate is cleaned by piranha solution$(H_2SO_4:H_2O_2\;=\;3:1)$. Subsequently, 1 mM/ml of dipyridinium dithioacetate molecule is self-assembled onto the Au(111) surface. Using STM, the images of dipyridinium dithioacetate molecule which is self-assembled onto the Au(111) substrate, can be observed. In addition, the electrical properties(I-V) of dipyridinium dithioacetate can also be examined by using Scanning Tunneling Spectroscopy(STS). From the results of the measurement of the current-voltage(I-V), the property of Negative Differential Resistance(NDR) that shows the decreases of current according to the increases of voltage is observed. We found the NDR voltage of the dipyridinium dithioacetate is -1.42 V(negative region) and 1.30 V(positive region), respectively.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.174-177
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• 2007

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

• Journal of Microbiology and Biotechnology
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• v.18 no.7
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• pp.1274-1277
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• 2008

The inactivating efficiency of alternating high-voltage pulsed (AHVP) current was investigated in brine (20 w/v% NaCl) and saline (0.9 w/v% NaCl) inoculated with $1\times10^7$ cells/ml of Listeria monocytogenes. AHVP current at 12 V with 1 pulse completely inactivated L. monocytogenes in brine within 3 ms, while the bacteria in saline were fully inactivated by 10-pulsed electric treatment at 12 V within the same time. Electron microscopic observation demonstrated substantial structural damage of electrically treated L. monocytogenes in brine. These results suggest that AHVP treatment would be effective for the rapid and complete inactivation of L. monocytogenes in brine or saline solution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.870-875
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• 2005

We measured the optogalvanic signal and discharge voltage-current(V-I) curve under the two different discharge conditions with different buffer gases, Ar, and Ne. When the Gd was used as a cathode material at low discharge current less than 10mA, a significant change was observed in the current-voltage curve. Time resolved optogalvanic signal measurement were measured by the diode laser of which wavelengths correspond to metastable transition line of these gases (Ar, Ne). From these measurements, we found that the characteristics of the V-I curve strongly depend on the Penning ionization process.

• Korean Journal of Materials Research
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• v.24 no.7
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• pp.375-380
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• 2014

Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and $80^{\circ}C$), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.411-414
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• 1999

70 ${\AA}$-thick oxides nitridied at various conditions were reoxidized at pemperatures of 900$^{\circ}C$ in dry-O$_2$ ambients for 5～40 mininutes. The gate oxide interface porperties as well as the oxide substrate interface properties of MOS(Metal Oxide Semiconductor) capacitors with various nitridation conditions, reoxidation conditions and pure oxidation condition were investigated. We stuided I$\sub$g/-V$\sub$g/ characteristics, $\Delta$V$\sub$g/ shift under constant current stress from electrical characteristics point of view and breakdown voltage from leakage current point of view of MOS capacitors with SiO$_2$, NO, RNO dielectrics. Overall, our experimental results show that reoxidized nitrided oxides show inproved charge trapping porperites, I$\sub$g/-V$\sub$g/ characteristics and gate $\Delta$V$\sub$g/ shift. It has also been shown that reoxidized nitridied oxide's leakage currented voltage is better than pure oxide's or nitrided oxide's from leakage current(1${\mu}$A) point of view.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.2
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• pp.363-369
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• 2017

This paper presents the experimental results related to soil ionization and electrical breakdown in a concentric hemispherical electrode system under lightning impulse voltages. Dynamic voltage-current and impedance-time characteristics of soil ionization were measured and analyzed. Also the electrical breakdowns of the soil gap were investigated. The time-lag to the peak current corresponds to the soil ionization propagation. The time of ionization propagation in wet sand is found to decrease with increasing the impulse currents. A drastic decrease in ground resistance was observed during the impulse current spreading in sand. The electrical breakdown appears at the wave tail of impulse voltage and results in a wide scatter in V-t curves. The voltage-current curves have a fan-like shape attributed to ionization processes which result in increasing current and decreasing voltage.

• The Korean Journal of Physiology and Pharmacology
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• v.1 no.6
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• pp.741-748
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• 1997

In the present study, we have investigated the effect of metabolic inhibition on the inward rectifier K current ($I_{K1}$). Using whole cell patch clamp technique we applied voltage ramp from +80 mV to -140 mV at a holding potential of -30 mV and recorded the whole cell current in single ventricular myocytes isolated from the rabbit heart. The current-voltage relationship showed N-shape (a large inward current and little outward current with a negative slope) which is a characteristic of $I_{K1}$. Application of 0.2 mM dinitrophenol (DNP, an uncoupler of oxidative phosphorylation as a tool for chemical hypoxia) to the bathing solution with the pipette solution containing 5 mM ATP, produced a gradual increase of outward current followed by a gradual decrease of inward current with little change in the reversal potential (-80 mV). The increase of outward current was reversed by glibenclamide ($10\;{\mu}M$), suggesting that it is caused by the activation of $K_{ATP}$. When DNP and glibenclamide were applied at the same time or glibenclamide was pretreated, DNP produced same degree of reduction in the magnitude of the inward current. These results show that metabolic inhibition induces not only the increase of $K_{ATP}$ channel but also the decrease of $I_{K1}$. Perfusing the cell with ATP-free pipette solution induced the changes very similar to those observed using DNP. Long exposure of DNP (30 min) or ATP-free pipette solution produced a marked decrease of both inward and outward current with a significant change in the reversal potential. Above results suggest that the decrease of $I_{K1}$ may contribute to the depolarisation of membrane potential during metabolic inhibition.