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http://dx.doi.org/10.3740/MRSK.2014.24.7.375

Measurement and Analysis of Temperature Dependence for Current-Voltage Characteristics of Homogeneous Emitter and Selective Emitter Crystalline Silicon Solar Cells  

Nam, Yoon Chung (Department of Materials Science and Engineering, Korea University)
Park, Hyomin (Department of Materials Science and Engineering, Korea University)
Lee, Ji Eun (Department of Materials Science and Engineering, Korea University)
Kim, Soo Min (Department of Materials Science and Engineering, Korea University)
Kim, Young Do (Department of Materials Science and Engineering, Korea University)
Park, Sungeun (Department of Materials Science and Engineering, Korea University)
Kang, Yoonmook (KU.KIST Green School, Graduated school of Energy and Environment, Korea University)
Lee, Hae-Seok (Department of Materials Science and Engineering, Korea University)
Kim, Donghwan (Department of Materials Science and Engineering, Korea University)
Publication Information
Korean Journal of Materials Research / v.24, no.7, 2014 , pp. 375-380 More about this Journal
Abstract
Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and $80^{\circ}C$), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.
Keywords
temperature dependence; homogeneous emitter; selective emitter; crystalline silicon solar cells; current-voltage characteristics;
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