• 제목/요약/키워드: current sensing

검색결과 1,071건 처리시간 0.026초

MOSFET을 이용한 전동기 구동을 위한 저가격형 전류검출법 (A Low-Cost Current-Sensing Scheme for MOSFET Motor Drives)

  • 장성동;정재호;박종규;이균정;신휘범
    • 전력전자학회논문지
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    • 제8권1호
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    • pp.40-47
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    • 2003
  • A low-cost current-sensing scheme for the motor drives with MOSFET is described. Many motor drives usually employ the common current sensors to measure current for the purpose of control or protection. These current sensors, however, significantly burden the power circuit with the size and cost. The proposed current-sensing scheme utilizes information concerning MOSFET's On-voltage and On-resistance. An analogue circuit detecting On-voltage can overcome the above disadvantages because the circuit is small and is made at a low cost, and the fuzzy inference for On-resistance is also simply designed based on MOSFET's characteristics. The validity of this scheme will be experimentally verified by adopting the current control of a battery car.

다상 동기 벅 컨버터의 Current Sensing 방법의 비교 연구 (Comparative Study on Current Sensing Method of Multi-Phase Synchronous Buck Converter)

  • 김정훈;조경식;임정규;정세교
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2007년도 추계학술대회 논문집
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    • pp.28-30
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    • 2007
  • For the design of the voltage regulation module(VRM) having a high performance, current sensing is one of the most important functions. In this paper, three different methods for sensing the current in the multi-phase synchronous buck converter are analyzed considering the efficiency, accuracy and cost. The experiments are performed for the three current sensing methods to verify the theoretic analysis.

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동기 벅 컨버터의 새로운 무손실 전류 측정 기법 (A Novel Lossless Current Sensing Technique for Synchronous Buck Converter)

  • 강병극;김무현;임정규;정세교
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2008년도 하계학술대회 논문집
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    • pp.31-33
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    • 2008
  • A novel lossless current sensing technique for a synchronous buck converter is presented. The inductor DCR method is generally used as a low cost and lossless current sensing technique of DC/DC converters. It is however difficult to obtain the accurate current value for the conventional DCR method because the inductor resistance varies depending on the operating frequency. In order to overcome this problem, an improved current sensing technique is proposed, which has the separated DC and AC sensing circuits. The concept and operation of the proposed method are explained and the experimental results are provided to show its effectiveness.

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게이트 전류 감지 구조를 이용한 향상된 레귤레이션 특성의 LDO regulator (LDO regulator with improved regulation characteristics using gate current sensing structure)

  • 정준모
    • 전기전자학회논문지
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    • 제27권3호
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    • pp.308-312
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    • 2023
  • 게이트 전류 감지 구조는 LDO 레귤레이터가 오버슈트 또는 언더슈트 상황 발생 시 출력전압의 레귤레이션을 보다 효과적으로 제어하기 위해 제안되었다. 기존의 전형적인 LDO 레귤레이터는 부하전류가 변화할 때 레귤레이션 전압 변화가 발생한다. 하지만 게이트 전류 감지 구조를 이용하여 패스 트랜지스터에 있는 게이트 단자 전류를 공급/방전 함으로 인해 패스 트랜지스터의 동작 속도를 더욱 향상시킬 수 있다. 게이트 전류 감지 구조를 이용한 LDO 레귤레이터의 입력전압은 3.3 V ~ 4.5 V 이며 출력 전압은 3 V이고 부하 전류는 최대 250 mA의 값을 갖는다. 시뮬레이션 결과, 부하 전류가 250 mA 까지 변화할 때 약 9 mV의 전압 변화 값을 확인하였다.

휴대용 이차전지 보호 시스템용 전류 감지 동작형 보호소자의 퓨즈 가용체 설계 (Design of Fuse Elements of Current Sensing Type Protection Device for Portable Secondary Battery Protection System)

  • 강창룡;김은민
    • 전기학회논문지
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    • 제67권12호
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    • pp.1619-1625
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    • 2018
  • Portable electronic devices secondary batteries can cause fire and explosion due to micro-current change in addition to the situation of short-circuit inrush current, safety can not be secured with a general operation limited current fuse. Therefore, in secondary battery, it is necessary for the protector to satisfy both the limit current type operation in the open-short-circuit inrush current and the current detection operation characteristic in the micro current change situation and for this operation, a fuse for the current detection type secondary battery protection circuit can be applied. The purpose of this study is to design a protection device that operates stably in the hazardous situation of small capacity secondary battery for portable electronic devices through the design of low melting fuse elements alloy of sensing type fuse and secures stability in abnormal current state. As a result of the experiment, I-T and V-T operation characteristics are satisfied in a the design of the alloy of the current sensing type self-contained low melting point fuse and the resistance of the heating resistor. It is confirmed that it can prevent accidents of short circuit over-current and micro current change of secondary battery.

High Performance Current-Mode DC-DC Boost Converter in BiCMOS Integrated Circuits

  • Lee, Chan-Soo;Kim, Eui-Jin;Gendensuren, Munkhsuld;Kim, Nam-Soo;Na, Kee-Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제12권6호
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    • pp.262-266
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    • 2011
  • A simulation study of a current-mode direct current (DC)-DC boost converter is presented in this paper. This converter, with a fully-integrated power module, is implemented by using bipolar complementary metal-oxide semiconductor (BiCMOS) technology. The current-sensing circuit has an op-amp to achieve high accuracy. With the sense metal-oxide semiconductor field-effect transistor (MOSFET) in the current sensor, the sensed inductor current with the internal ramp signal can be used for feedback control. In addition, BiCMOS technology is applied to the converter, for accurate current sensing and low power consumption. The DC-DC converter is designed with a standard 0.35 ${\mu}m$ BiCMOS process. The off-chip inductor-capacitor (LC) filter is operated with an inductance of 1 mH and a capacitance of 12.5 nF. Simulation results show the high performance of the current-sensing circuit and the validity of the BiCMOS converter. The output voltage is found to be 4.1 V with a ripple ratio of 1.5% at the duty ratio of 0.3. The sensing current is measured to be within 1 mA and follows to fit the order of the aspect ratio, between sensing and power FET.

Widely Tunable Adaptive Resolution-controlled Read-sensing Reference Current Generation for Reliable PRAM Data Read at Scaled Technologies

  • Park, Mu-hui;Kong, Bai-Sun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권3호
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    • pp.363-369
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    • 2017
  • Phase-change random access memory (PRAM) has been emerged as a potential memory due to its excellent scalability, non-volatility, and random accessibility. But, as the cell current is reducing due to cell size scaling, the read-sensing window margin is also decreasing due to increased variation of cell performance distribution, resulting in a substantial loss of yield. To cope with this problem, a novel adaptive read-sensing reference current generation scheme is proposed, whose trimming range and resolution are adaptively controlled depending on process conditions. Performance evaluation in a 58-nm CMOS process indicated that the proposed read-sensing reference current scheme allowed the integral nonlinearity (INL) to be improved from 10.3 LSB to 2.14 LSB (79% reduction), and the differential nonlinearity (DNL) from 2.29 LSB to 0.94 LSB (59% reduction).

A Fast Response Integrated Current-Sensing Circuit for Peak-Current-Mode Buck Regulator

  • Ha, Jung-Woo;Park, Byeong-Ha;Kong, Bai-Sun;Chun, Jung-Hoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권6호
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    • pp.810-817
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    • 2014
  • An on-chip current sensor with fast response time for the peak-current-mode buck regulator is proposed. The initial operating points of the peak current sensor are determined in advance by the valley current level, which is sensed by a valley current sensor. As a result, the proposed current sensor achieves a fast response time of less than 20 ns, and a sensing accuracy of over 90%. Applying the proposed current sensor, the peak-current-mode buck regulator for the mobile application is realized with an operating frequency of 2 MHz, an output voltage of 0.8 V, a maximum load current of 500 mA, and a peak efficiency of over 83%.

Rogowski Coil 기반의 전류 센싱 회로를 적용한 SiC MOSFET 단락 보호 회로 설계 (Short-circuit Protection Circuit Design for SiC MOSFET Using Current Sensing Circuit Based on Rogowski Coil)

  • 이주아;변종은;안상준;손원진;이병국
    • 전력전자학회논문지
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    • 제26권3호
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    • pp.214-221
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    • 2021
  • SiC MOSFETs require a faster and more reliable short-circuit protection circuit than conventional methods due to narrow short-circuit withstand times. Therefore, this research proposes a short-circuit protection circuit using a current-sensing circuit based on Rogowski coil. The method of designing the current-sensing circuit, which is a component of the proposed circuit, is presented first. The integrator and input/output filter that compose the current-sensing circuit are designed to have a wide bandwidth for accurately measuring short-circuit currents with high di/dt. The precision of the designed sensing circuit is verified on a double pulse test (DPT). In addition, the sensing accuracy according to the bandwidth of the filters and the number of turns of the Rogowski coil is analyzed. Next, the entire short-circuit protection circuit with the current-sensing circuit is designed in consideration of the fast short-circuit shutdown time. To verify the performance of this circuit, a short-circuit test is conducted for two cases of short-circuit conditions that can occur in the half-bridge structure. Finally, the short-circuit shutdown time is measured to confirm the suitability of the proposed protection circuit for the SiC MOSFET short-circuit protection.

아날로그 회로로 구현가능한 평균전류제어 저손실 bypass 전류센싱방법 (The Analog-circuited Low-loss Bypass Current Sensing Method for Average Current Mode Control)

  • 김석희;최병민;박종후;전희종
    • 전력전자학회논문지
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    • 제19권2호
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    • pp.133-138
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    • 2014
  • This paper proposes a low power-loss averaging current mode control using a resistor and bypass switch. Generally, current sensing method using a resistor has a disadvantage of power loss which degrades the efficiency of the entire systems. On the other hand, proposed measurement technique operating with bypass-switch connected in parallel with sensing resistor can reduce power loss significantly the current sensor. An analog-circuited bypass driver is implemented and used along with an average-circuit mode controller. The bypass switch bypasses the sensing current with a small amount of power loss. In this paper, a 50[W] prototype average current mode boost converter has been implemented for the experimental verification.