• Title/Summary/Keyword: current mirror

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Design of Low-Voltage Reference Voltage Generator for NVM IPs (NVM IP용 저전압 기준전압 회로 설계)

  • Kim, Meong-Seok;Jeong, Woo-Young;Park, Heon;Ha, Pan-Bong;Kim, Young-Hee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.375-378
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    • 2013
  • A reference voltage generator which is insensitive to PVT (process-voltage-temperature) variation necessary for NVM memory IPs such as EEPROM and MTP memories is designed in this paper. The designed BGR (bandgap reference voltage) circuit based on MagnaChip's $0.18{\mu}m$ EEPROM process uses a low-voltage bandgap reference voltage generator of cascode current-mirror type with a wide swing and shows a reference voltage characteristic insensitive to PVT variation. The minimum operating voltage is 1.43V and the VREF sensitivity against VDD variation is 0.064mV/V. Also, the VREF sensitivity against temperature variation is $20.5ppm/^{\circ}C$. The VREF voltage has a mean of 1.181V and its three sigma ($3{\sigma}$) value is 71.7mV.

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Low voltage Low power OTAs using bulk driven in 0.35㎛ CMOS Process (0.35㎛ CMOS 공정에서 벌크 입력을 사용한 저전압 저전력 OTAs)

  • Kang, Seong-Ki;Jung, Min-Kyun;Han, Dae-Deok;Yang, Min-Jae;Yoon, Eun-Jung;Yu, Chong-Gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2015.10a
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    • pp.451-454
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    • 2015
  • This paper introduces 3 type of OTAs with $0.35-{\mu}m$ standard CMOS technology for Low-Power, Low-Voltage. The first type is a two-stage OTA designed to operate with a 1-V VDD and it has $1.774{\mu}W$ low power consumption. All transistors are operating in strong inversion. It takes Gm-Enhancement techniques to compensate gm, which is lowered by Bulk-Driven technique and has an Wide swing current mirror for low voltage operation and a Class-A output. The second type is a Two-stage OTA designed to operate with a 0.8-V VDD and It has 52nW low power consumption and 112dB high gain. The current mirror uses Composite Transistor binding Gates of two MOSFET to raise Rout which is similar with cascode structure. The third type is a Two-stage OTA designed to operate with a 0.6-V VDD and It has 160nW low power consumption and 72dB high gain. It takes Level Shift technique by Common Gate structure to amplify signals without additional bias voltage at second stage.

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Neuron Circuit Using a Thyristor and Inter-neuron Connection with Synaptic Devices

  • Ranjan, Rajeev;Kwon, Min-Woo;Park, Jungjin;Kim, Hyungjin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.3
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    • pp.365-373
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    • 2015
  • We propose a simple and compact thyristor-based neuron circuit. The thyristor exhibits bi-stable characteristics that can mimic the action potential of the biological neuron, when it is switched between its OFF-state and ON-state with the help of assist circuit. In addition, a method of inter-neuron connection with synaptic devices is proposed, using double current mirror circuit. The circuit utilizes both short-term and long-term plasticity of the synaptic devices by flowing current through them and transferring it to the post-synaptic neuron. The double current mirror circuit is capable of shielding the pre-synaptic neuron from the post synaptic-neuron while transferring the signal through it, maintaining the synaptic conductance unaffected by the change in the input voltage of the post-synaptic neuron.

Accuracy of Current Delivery System in Current Source Data-Driver IC for AM-OLED

  • Hattori, Reiji
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.4
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    • pp.269-274
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    • 2004
  • Current delivery system, in which the analog current produced by a unique DAC circuit is stored into a current-memory circuit and delivered in a time-divided sequence, shows variation of output current as low as 4% in a current source data-driver IC for AM-OLED driven by a current-programmed method without any fuse repairing after fabrication. This driver IC has 54 outputs and can sink constant current as low as 3 ${\mu}A$ with 6-bit analog levels. Such a low current level without variation can hardly be obtained by an ordinary MOS transistor because the current level is in the sub-threshold region and changes exponentially with threshold voltage variation. Thus we adopted a current mirror circuit composed of bipolar transistors to supply well-controlled current within a nano-ampere range.

Fiber-Optic Current Transformer for the Over Current Protection Relay (과전류 보호계전기용 광섬유 전류센서)

  • Song, Min-Ho;Yang, Chang-Soon;Ahn, Seong-Joon;Park, Byoung-Seok;Lee, Byoung-Ho
    • Journal of the Korean Society for Nondestructive Testing
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    • v.21 no.5
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    • pp.542-548
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    • 2001
  • A robust, accurate, broad-band, alternating current sensor using fiber-optics is being developed as a part of optical over current protection relay system. The sensor uses the Faraday effect in optical fiber and polarimetric measurements tc sense electrical current. The current sensing coil consists of a length of twisted optical fiber and Faraday rotator mirror to suppress the linear birefringence effect. Due to its single-ended closed path structure, it can not only be easily installed to the target with great isolation from other fields in the vicinity, but the sensitivity can be increased by using multiple turns. This paper reports on the theoretical backgrounds of the sensor design and the preliminary experimental results.

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Class A CMOS current conveyors (A급 CMOS 전류 콘베이어 (CCII))

  • 차형우
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.9
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    • pp.1-9
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    • 1997
  • Novel class A CMOS second-generation current conveyors (CCII) using 0.6.mu.m n-well standard CMOS process for high-frequency current-mode signal processing were developed. The CCII consists of a regulated current-cell for the voltage input and a cascode current mirror for the current output. In this architecture, the two input stages are coupled by current mirrors to reduce the current input impedance. Measurements of the fabricated cCII show that the current input impedance is 308 .ohm. and the 3-dB cutoff frequency when used as a voltage amplifier extends beyond 10MHz. The linear dynamic ranges of voltage and current are from -0.5V to 1.5V and from -100.mu.A to +120.mu.A for supply voltage V$\_$DD/ = -V$\_$SS/=2.5V, respectively. The power dissipation is 2 mW and the active chip area is 0.2 * 0.2 [mm$\^$2/].

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The design of Fully Differential CMOS Operational Amplifier (Fully Differential CMOS 연산 증폭기 설계)

  • Ahn, In-Soo;Song, Seok-Ho;Choi, Tae-Sup;Yim, Tae-Soo;Sakong, Sug-Chin
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.6
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    • pp.85-96
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    • 2000
  • It is necessary that fully differential operational amplifier circuit should drive an external load in the VLSI design such as SCF(Switched Capacitor Filter), D/A Converter, A/D Converter, Telecommunication Circuit and etc. The conventional CMOS operational amplifier circuit has many problems according to CMOS technique. Firstly, Capacity of large loads are not able to operate well. The problem can be solve to use class AB stages. But large loads are operate a difficult, because an element of existing CMOS has a quadratic functional relation with input and output voltage versus output current. Secondly, Whole circuit of dynamic range decrease, because a range of input and output voltages go down according as increasing of intergration rate drop supply voltage. The problem can be improved by employing fully differential operational amplifier using differential output stage with wide output swing. In this paper, we proposed new current mirror has large output impedance and good current matching with input an output current and compared with characteristics for operational amplifier using cascoded current mirror. To obtain large output swing and low power consumption we suggest a fully differential operational amplifier. The circuit employs an output stage composed new current mirror and two amplifier stage. The proposed circuit is layout and circuit of capability is inspected through simulation program(SPICE3f).

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High-linearity voltage-controlled current source circuits with wide range current output (넓은 범위의 전류 출력을 갖는 고선형 전압-제어 전류원 회로)

  • Cha, Hyeong-Woo
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.395-398
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    • 2004
  • High-linearity voltage-controlled current sources (VCCSs) circuits for wide voltage-controlled oscillator and automatic gun control were proposed. The VCCS consists of emitter follower for voltage input, two common-base amplifier which their emitter connected for current output, and current mirror which connected the two amplifier for large output current. The VCCS used only five transistors and a resistor without an extra bias circuit. Simulation results show that the VCCS has current output range from 0mA to 300mA over the control voltage range from 1V to 4.8V at supply voltage 5V. The linearity error of output current has less than $1.4\%$ over the current range from 0A to 300mA.

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A study of class AB CMOS current conveyors (AB급 CMOS 전류 콘베이어(CCII)에 관한 연구)

  • 차형우;김종필
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.10
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    • pp.19-26
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    • 1997
  • Novel class AB CMOS second-generation current conveyors (CCII) using 0.6.mu.m n-well CMOS process for high-frequency current-mode signal processing were developed. The CCII for low power operation consists of a class AB push-pull stage for the current input, a complementary source follower for the voltage input, and a cascode current mirror for the current output. In this architecture, the two input stages are coupled by current mirrors to reduce the current input impedance. Measurements of the fabricated CCII show that the current input impedance is 875.ohm. and the bandwidth of flat gain when used as a voltage amplifier extends beyond 4MHz. The power dissipation is 1.25mW and the active chip area is 0.2*0.15[mm$\^$2/].

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Design of a BJT low-voltge low-frequency filter using current amplifier (전류증폭기를 이용한 BJT 저전압 저주파 필터 설계)

  • 안정철;최석우;윤창훈
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.5
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    • pp.33-40
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    • 1998
  • In this paper, a design of current-mode continuous-time filters for low voltage and low frequency applications using complementary bipolar current mirrors is presented. The proposed current-mode filters consist of simple bipolar current mirrors and capacitors and are quite suitable for monolithic integration. Since the design method of the proposed current-mode filters are based on the integrator type of realization, it can be used for a wide range of applications. Since the input impedance of simple bipolar current mirror is small, in this paper, negative feedback amplifier is used to realize is designed by cascade method. The cutoff frequency of the designed filter can be easily tunable by the DC controlling current from 60kHz to 120kHz. The characteristics of the designed current-mode filters are simulated and examined by SPICE using standard bipolar transistor parameters.

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