• Title/Summary/Keyword: crystallization characteristics

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A Study on the Thermal, Electrical Characteristics of Ge-Se-Te Chalcogenide Material for Use in Phase Change Memory

  • Nam, Ki-Hyun;Chung, Hong-Bay
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.6
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    • pp.223-226
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    • 2008
  • $Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

The Analysis of Transfer and Output characteristics by Stress in Polycrystalline Silicon Thin Film Transistor (다결정 실리콘 박막 트랜지스터에서 스트레스에 의한 출력과 전달특성 분석)

  • 정은식;안점영;이용재
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.145-148
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    • 2001
  • In this paper, polycrystalline silicon thin film transistor using by Solid Phase Crystallization(SPC) were fabricated, and these devices were measured and analyzed the electrical output and transfer characteristics along to DC voltage stress. The transfer characteristics of polycrystalline silicon thin film transistor depended on drain and gate voltages. Threshold voltage is high with long channel length and narrow channel width. And output characteristics of polycrystalline silicon thin film transistor flowed abruptly much higher drain current. The devices induced electrical stress are decreased drain current. At last, field effect mobility is the faster as channel length is high and channel width is narrow.

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Morphological and Electrical Characteristics of nc-ZnO/ZnO Thin Films Fabricated by Spray-pyrolysis for Field-effect Transistor Application (전계효과트랜지스터 기반 반도체 소자 응용을 위한 스프레이 공정을 이용한 nc-ZnO/ZnO 박막 제작 및 특성 분석)

  • Cho, Junhee
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.4
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    • pp.1-5
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    • 2021
  • Field-effect transistors based on solution-processed metal oxide semiconductors has attracted huge attention due to their intrinsic characteristics of optical and electrical characteristics with benefits of simple and low-cost process. Especially, spray-pyrolysis has shown excellent device performance which compatible to vacuum-processed Field-effect transistors. However, the high annealing temperature for crystallization of MOS and narrow range of precursors has impeded the progress of the technology. Here, we demonstrated the nc-ZnO/ZnO films performed by spray-pyrolysis with incorporating ZnO nanoparticles into typical ZnO precursor. The films exhibit preserving morphological properties of poly-crystalline ZnO and enhanced electrical characteristics with potential for low-temperature processability. The influence of nanoparticles within the film was also researched for realizing ZnO films providing good quality of performance.

Cycle Analysis of Hot Water Driven Absorption Refrigerator with New Working Absorption Solution (신흡수용액을 이용한 중온수 흡수식 냉동기의 사이클 해석)

  • Gwon, O-Gyeong;Yun, Jae-Ho;Mun, Chun-Geun;Yun, Jeong-In
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.26 no.9
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    • pp.1241-1248
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    • 2002
  • Performance extension of the absorption refrigerator with LiBr solution is often faced to operate very close to the crystallization limit. Especially in the development of an air-cooled cycle, the crystallization of working solution in the system is a very difficult problem to overcome. This paper describes the cycle of hot water driven absorption system using a new working absorption solution instead of LiBr solution to improve the efficiency. In this study, we found out the characteristics of new working absorption solution through the cycle simulation and compared LiBr solution to evaluate. The effect of cooling water temperature, weak solution flow rate, hot water temperature and hot water flow rate were also examined. The COP is increased 22% higher in the case of LiBr+Li1+LiC1+LiNO$_3$$H_2O$, 2% LiBr+HO(CH$_2$)$_3$OH+$H_2O$ than that of LiBr solution for the same operation condition.

Study on Dyeing Properties of Nylon 66 Nano Fiber (1) -Levelling Type Acid Dyes- (나일론 66 나노섬유의 염색성에 관한 연구(1) -균염성 산성염료-)

  • 이권선;이범수;박영환;김성동;김용민;오명준;정성훈
    • Textile Coloration and Finishing
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    • v.16 no.4
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    • pp.1-9
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    • 2004
  • In recent, development of nano fiber has been one of the most active subjects in the world. Nano fiber is defined as a ultra fine yarn with a diameter unit of $10-100\times10^{-9}meter$, which is possible to be produced by an electro-spinning technology. In this study, physical characteristics and dyeing properties of nylon 66 nano fiber were investigated. Nylon 66 nano fiber was dyed with levelling type acid dyes. X-ray diffraction method and DSC analysis were used for the measurement of the degree of crystallization. Analysis of amino end groups was also performed in order to examine a relationship between number of amino groups and its dyeing property as well as water absorption behavior. The maximum exhaustion % of dyes and dyeing rate under various dyeing conditions, such as dyeing temperature and pH in dye bath, along with build-up properties for 2 acid dyes were evaluated. It was found that the degree of crystallization of nano fiber was smaller than that of regular fiber, and amino end groups of nano fiber were less than regular fiber. Half dyeing time of nano fiber was shorter than regular fiber because of the bigger specific surface area. Effect of pH on exhaustion % was small in case of nano fiber. Exhaustion of nano fiber increased with higher concentration of dye.

A Study on the Characteristics of Amorphous TiAl by P/M Processing

  • Han, Chang-Suk;Jeon, Seung-Jin
    • Journal of the Korean Society for Heat Treatment
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    • v.29 no.2
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    • pp.51-55
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    • 2016
  • The P/M processing of titanium aluminide using amorphous TiAl is developed by which it is possible to overcome inherent fabricability problems and to obtain a fine microstructure. A high quality amorphous TiAl powder produced by reaction ball milling shows clear glass transition far below a temperature at the onset of crystallization in differential scanning calorimetry above a heating rate of 0.05 K/s. We obtained a fully dense compact of amorphous TiAl powders, encapsulated in a vacuumed can, via viscous flow by hot isostatic pressing (HIP). Isothermally annealing of HIP'ed amorphous compact under a pressure of 196 MPa shows a progressive growth of ${\gamma}-TiAl$ phase with ${\alpha}2$ ($Ti_3Al$), which is characterized by increasing sharpness of X-ray peaks with temperature. Fully dense HIP'ed compact of titanium aluminide TiAl shows a high hardness of 505 Hv, suggesting strengthening mechanisms by sub-micron sized grain of ${\gamma}-TiAl$ and particle-dispersion by second phase constituent, ${\alpha}2$.

A Study on the Electrical Characteristics of Low Temperature Polycrystalline Thin Film Transistor(TFT) using Silicide Mediated Crystallization(SMC) (금속유도 결정화를 이용한 저온 다결정 실리콘 TFT 특성에 관한 연구)

  • 김강석;남영민;손송호;정영균;주상민;박원규;김동환
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.129-129
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    • 2003
  • 최근에 능동 영역 액정 표시 소자(Active Matrix Liquid Crystal Display, AMLCD)에서 고해상도와 빠른 응답속도를 요구하게 되면서부터 다결정 실리콘(poly-Si) 박막 트랜지스터(Thin Film Transistor, TFT)가 쓰이게 되었다. 그리고 일반적으로 디스플레이의 기판을 상대적으로 저가의 유리를 사용하기 때문에 저온 공정이 필수적이다. 따라서 새로운 저온 결정화 방법과 부가적으로 최근 디스플레이 개발 동향 중 하나인 대화면에 적용 가능한 공정인 금속유도 결정화 (Silicide Mediated Crystallization, SMC)가 연구되고 있다. 이 소자는 top-gated coplanar구조로 설계되었다. (그림 1)(100) 실리콘 웨이퍼위에 3000$\AA$의 열산화막을 올리고, LPCVD로 55$0^{\circ}C$에서 비정질 실리콘(a-Si:H) 박막을 550$\AA$ 증착 시켰다. 그리고 시편은 SMC 방법으로 결정화 시켜 TEM(Transmission Electron Microscopy)으로 SMC 다결정 실리콘을 분석하였다. 그 위에 TFT의 게이트 산화막을 열산화막 만큼 우수한 TEOS(Tetraethoxysilane)소스로 사용하여 실리콘 산화막을 1000$\AA$ 형성하였고 게이트는 3000$\AA$ 두께로 몰리브덴을 스퍼터링을 통하여 형성하였다. 이 다결정 실리콘은 3$\times$10^15 cm^-2의 보론(B)을 도핑시켰다. 채널, 소스, 드래인을 정의하기 위해 플라즈마 식각이 이루어 졌으며, 실리콘 산화막과 실리콘 질화막으로 passivation하고, 알루미늄으로 전극을 형성하였다 그리고 마지막에 TFT의 출력특성과 전이특성을 측정함으로써 threshold voltage, the subthreshold slope 와 the field effect mobility를 계산하였다.

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Characteristics of SBN Thin Films Prepared by Sol-Gel Process (졸겔법으로 제조된 SBN박막의 특성연구)

  • 이동근;김태중;이해욱;이희영;김정주;조상희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.1030-1035
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    • 2001
  • Strontium barium niobate, (Sr$\sub$0.5/Ba$\sub$0.5/Nb$_2$O$\sub$6/), thin films of various composition were prepared by the sol-gel method. Solution derived from acetate powders and niobium ethoxide in a mixture of acetic acid, ethylene glycol and 2-methoxyehanol was spin-coated onto bare silicon, Pt-coated silicon and fused silica substrates. Processing parameters were optimized to develop stable solutions which yielded films with relatively low crystallization temperatures. It was determined that ethylene glycol was a necessary component of the solution to increase stability against precipitation and to decrease the crystallization temperature of the films as confirmed by XRD and FT-IR analyses.

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Cycle Analysis of Air-Cooled Double-Effect Absorption Cooling System Using H2O/LiBr+HO(CH2)3OH (H2O/LiBr+HO(CH2)3OH계 공냉형 이중효용 흡수식 냉방시스템의 사이클 해석)

  • Kwon, Oh-Kyung;Moon, Choon-Geun;Yoon, Jung-In
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.23 no.2
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    • pp.272-280
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    • 1999
  • A cycle analysis was achieved to predict the characteristics by comprehensive modeling and simulation of an air-cooled, double-effect absorption system using a new $H_2O/LiBr+HO(CH_2)_3OH$ solution. The simulation results showed that the new working fluid may provide the crystallization limit 8% higher than the conventional $H_2O/LiBr$ solution. With a crystallization margin of 3wt%(weight%), the optimal solution distribution ratio was found in the range of 36 to 40%. Variation of cooling air Inlet temperature has a sensitive effect on the cooling COP and corrosion problem. The simulation of heat exchangers with UA value revealed that the absorber and the evaporator are relatively important for an air-cooled system compared with the condenser and the low temperature generator. The effect of cooling air flow rate, circulation weak solution flow rate and chilled water inlet temperature were also examined. The new working fluid may provide the COP approximately 5% higher than the conventional $H_2O/LiBr$ solution.

Effect of Binder Glass Crystallization on Electrical Properties in $RuO_2$-Thick Film Resistor

  • Sungmin Kwon;Kim, Cheol-Young
    • The Korean Journal of Ceramics
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    • v.2 no.1
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    • pp.33-38
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    • 1996
  • In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.

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