• Journal of Advanced Marine Engineering and Technology
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• v.21 no.5
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• pp.535-541
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• 1997

The effect of concentration of each solution( HCI, $H_2SO_4$ and $HNO_3$), scan rate and polished surface condition on the corrosion of AISI 304 Stainless Steel were investigated, utilizing the Method ASTM G5 - 87. It can be concluded that: 1) For the same concentration(i.e. 1N) of each solution the corrosion rate is the highest in HCI and lowest in $HNO_3$. Also, the difference of values of $i_{cirt}$ generated for each solution is significant. 2) As the concentration of the solution $H_2SO_4$ is increased (O.5N, 1N, 2N) the values of $E_{cor}$ $i_{crit}$ and $i_{p}$ are increased. 3) In case of existence of SCN ion of O.OlN, the values of iCTIt and ip generated are approximately 100 times and 1.4 times higher respectively, than in the case of non - existence of $SCN^{-}$. However the existence of $SCN^{-}$ doesn't affect the value of $E_{cor}$ and $E_{p}$. 4) The values of $i_{crit}$ and $i_{p}$ are increased due to the increase of scan rate. But the values of $E_{cor}$ and $E_{p}$ do not depend on the scan rate. 5) The $i_{p}$ value depends greatly on oxygen in the solution, but the changes in values of $E_{cor}$ $i_{crit}$ and $E_{b}$ due to the oxygen are insignificant. 6) If a component is polished using #400, #600 and #800 wet polish paper, the effect of surface condition on variations of values of $i_{crit}$ and $i_{p}$ is slightly significant.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.27-30
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• 2001

Electromigration Phenomena in Al-1%Si thin film interconnections under DC and PDC conditions were investigated. Thin film interconnections with $SiO_2$ and PSG/$SiO_2$ dielectric passivation layer were formed by a standard photolithography process method and test line lengths were 100, 400, 800, 1200, and 1600 $\mu\textrm{m}$. The current density of $1.19\times10^7\textrm{A/cm}^2$ was stressed in Al-1%Si thin film interconnections under DC condition. The current density of $1.19\times10^7\textrm{A/cm}^2$ was also applied under PDC condition at the frequency of 1 Hz with the duty factor of 0.5. The electromigration resistance of PSG/SiO2 dielectric passivation test line was stronger than $SiO_2$ dielectric passivation test line. The lifetime under PDC was 2-4 times longer than DC condition. As the thin film interconnection line increased, the lifetime decreased and saturated over the critical length. Failure patterns by an electromigration were dominated by void-induced electrical open and hillock-induced electrical short.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.681-686
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• 1994

Microwave Detector Using $YBa_{2}Cu_{3}O_{7-x}$, Grain Boundary Junction $YBa_{2}Cu_{3}O_{7-x}$ superconductor thin films were deposited on $LaAIO_{3}$ (100) single crystal substrates using a metal organic chemical vapor deposition (MOCVD) method. These films showed the critical temperature of about 9OK and critical current density of over $10^5/A \textrm{cm}^2$at 77K. These films showed granular structure with 0.5~1.5$\mu \textrm{m}$ grains. Bridge-type junctions, 6$\mu \textrm{m}$ in width and 6pm in length, were fabricated using the photolithography and the Ar ion milling techniques. Current-voltage (I-V) characteristics of these junctions with the microwave irradiation at 77K were studied. The critical current densities decreased as the irradiated microwave power increased. When microwaves were irradiated on the bridge at 77K. the I-V charateristics showed constant voltage stcp(Shapiro steps) at $\Delta$=nho/2e.

• Journal of Microbiology and Biotechnology
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• v.23 no.12
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• pp.1765-1773
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• 2013

The cathode reaction is one of the most seriously limiting factors in a microbial fuel cell (MFC). The critical dissolved oxygen (DO) concentration of a platinum-loaded graphite electrode was reported as 2.2 mg/l, about 10-fold higher than an aerobic bacterium. A series of MFCs were run with the cathode compartment inoculated with activated sludge (biotic) or not (abiotic) on platinum-loaded or bare graphite electrodes. At the beginning of the operation, the current values from MFCs with a biocathode and abiotic cathode were $2.3{\pm}0.1$ and $2.6{\pm}0.2mA$, respectively, at the air-saturated water supply in the cathode. The current from MFCs with an abiotic cathode did not change, but that of MFCs with a biotic cathode increased to 3.0 mA after 8 weeks. The coulomb efficiency was 59.6% in the MFCs with a biotic cathode, much higher than the value of 15.6% of the abiotic cathode. When the DO supply was reduced, the current from MFCs with an abiotic cathode decreased more sharply than in those with a biotic cathode. When the respiratory inhibitor azide was added to the catholyte, the current decreased in MFCs with a biotic cathode but did not change in MFCs with an abiotic cathode. The power density was higher in MFCs with a biotic cathode ($430W/m^3$ cathode compartment) than the abiotic cathode MFC ($257W/m^3$ cathode compartment). Electron microscopic observation revealed nanowire structures in biofilms that developed on both the anode and on the biocathode. These results show that an electron-consuming bacterial consortium can be used as a cathode catalyst to improve the cathode reaction.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.314-321
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• 2006

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Applied Chemistry for Engineering
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• v.23 no.4
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• pp.359-366
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• 2012

Zn-Air energy storage cell is an attractive type of batteries due to its theoretical gravimetric energy density, cost-effective structure and environmental-friendly characteristics. The chargeability is the most critical in various industrial applications such as smart portable device, electric vehicle, and power storage system. Thus, it is necessary to reduce large overpotential of oxygen reduction/evolution reaction, the irreversibility of Zn anode, and carbonation in alkaline electrolyte. In this review, we try to introduce recent studies and developments of bi-functional air cathode, enhanced charge efficiency via modification of Zn anode structure, and blocking side reactions applying hybrid organic-aqueous electrolyte for high power density rechargeable Zn-Air energy storage cells.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.1011-1017
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• 1998

$YBa_2Cu_3O_{6+x}(Y123)-Ag$ high-Tc superconducting wires were fabricated by plastic extrusion technique using pyrophoric synthetic and mechanical mixing powder with and without Ag addition(20 wt.%). This method involves powder preparation, plastic paste making, die extrusion, binder burn-out and the sintering process. In order to fabricate a good-quality superconducting body, it is required to use homogeneous and fine-size power as a starting materials. $Y_2O_3-BaCO_3-CuO$ precursor powders with/without Ag addition were prepared both by pyrophoric synthetic(PS) and mechanical mixing(MM) method of raw powders. The formation kinetics of the powder mixtures into Y123 phase was investigated at various temperatures and times in air atmosphere. The powder prepared by PS method was more easily converted into a Y123 phase than the MM powder. The fine size and good chemical homogeneity of the powder prepared by PS method is attributable to the fast formation into a Y123 phase. The critical current density($J_c$) of the Y123-Ag superconducting wires made by plastic extrusion method were in the range of $150A/cm^2{\sim}230A/cm^2$. depending on the charateristics of starting material powders. $J_c$ of the wire prepared by pyrophoric synthetic powder with 20 wt.% Ag addition was $230A/cm^2$.

• Progress in Superconductivity
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• v.10 no.2
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• pp.79-86
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• 2009

We successfully fabricated C-doped ex-situ $MgB_2$ wires using two different methods such as mechanical alloying(MA) and combined process(CP) of in-situ and ex-situ. In the MA, the precursor powder was prepared with a mixture of $MgB_2$ and 1 at% C powders by planetary ball milling for 0-100 h. In the CP, on the other hand, C-doped $MgB_2$ powder was prepared with Mg, B, and C powders by in-situ process via compaction, sintering, and crushing. The powders prepared by two methods were loaded into Fe tube and then the assemblages were drawn by a conventional powder-in-tube technique. The MA treatment of C-added $MgB_2$ decreased the particles/grains size and resulted in C-doping into $MgB_2$ after sintering, improving the critical current density($J_c$) in high external magnetic field. For the C-doped $MgB_2$ wire by MA for 25 h, the $J_c$ was $4.1{\times}10^3A/cm^2$ at 5 K and 6.4 T, which was 5.9 times higher than that of pure and untreated $MgB_2$ wire. The CP also provided C-doping into $MgB_2$ and improved the $J_c$ in high magnetic field; the C-doped $MgB_2$ wire fabricated by CP exhibited a $J_c$ being 2.3 times higher than that of the ex-situ wire used commercial $MgB_2$ powder at 5 K and 6.0 T($2.7{\times}10^3A/cm^2\;vs.\;1.2{\times}10^3A/cm^2$).

• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.18-24
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• 2019

This study was carried out to investigate the effect of milling of boron (B), which is one of raw materials of $MgB_2$, on the critical current density ($J_c$) of $MgB_2$. B powder used in this study is semi-amorphous B (Pavezyum, Turkey, 97% purity, 1 micron). The size of B powder was reduced by planetary milling using $ZrO_2$ balls (a diameter of 2 mm). The B powder and balls with a ratio of 1:20 were charged in a ceramic jar and then the jar was filled with toluene. The milling time was varied from 0 to 8 h. The milled B powders were mixed with Mg powder in the composition of (Mg+2B), and the powder mixtures were uniaxially pressed at 3 tons. The powder compacts were heat-treated at $700^{\circ}C$ for 1 h in flowing argon gas. Powder X-ray diffraction and FWHM (Full width at half maximum) were used to analyze the phase formation and crystallinity of $MgB_2$. The superconducting transition temperature ($T_c$) and $J_c$ of $MgB_2$ were measured using a magnetic property measurement system (MPMS). It was found that $B_2O_3$ was formed by B milling and the subsequent drying process, and the volume fraction of $B_2O_3$ increased as milling time increased. The $T_c$ of $MgB_2$ decreased with increasing milling time, which was explained in terms of the decreased volume fraction of $MgB_2$, the line broadening of $MgB_2$ peaks and the formation of $B_2O_3$. The $J_c$ at 5 K increased with increasing milling time. The $J_c$ increase is more remarkable at the magnetic field higher than 3 T. The $J_c$ at 5 K and 4 T was the highest as $4.37{\times}10^4A/cm^2$ when milling time was 2 h. The $J_c$ at 20 K also increased with increasing milling time. However, The $J_c$ of the samples with the prolonged milling for 6 and 8 h were lower than that of the non-milled sample.