• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.439-446
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• 2011

Yttria stabilized zirconia (YSZ) coating was formed on AA1050 Al alloys by aerosol deposition (AD), and its electrochemical corrosion properties were investigated in 3.5 wt% NaCl and 0.5M $H_2SO_4$ solutions. The crack-free, dense, and ~5 ${\mu}m$ thick YSZ coating was successfully obtained by AD. The as-deposited coating was composed of cubic-YSZ nanocrystallites of ~10 nm size. The potentiodynamic test indicated that the YSZ coated Al alloy had much lower corrosion current densities (2 nA/$cm^2$) by comparison to uncoated sample and exhibited a passive behavior in anodic branch. Particularly, a pitting breakdown potential could not be identified in $H_2SO_4$. EIS tests revealed that the impedance of YSZ coated sample was ${\sim}10^6{\Omega}cm^2$ in NaCl and ${\sim}10^7{\Omega}cm^2$ in $H_2SO_4$, which was about 3 or 4 orders of magnitude higher than that of uncoated sample. Consequently, the corrosion resistance of Al alloy had been significantly enhanced by the YSZ coating.

• Journal of the Korean Ceramic Society
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• v.54 no.3
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• pp.243-248
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• 2017

Pd-doped $SnO_2$ thick film with a pure tetragonal phase was prepared on patterned Pt electrodes by an ink dropping method. Nanostructured $SnO_2$ powder with a diameter of 10 nm was obtained by a modified hydrazine method. Then the ink solution was fabricated by mixing water, glycerol, bicine and the Pd-doped $SnO_2$ powder. When the Pd doping concentration was increased, the grain size of the Pd-doped $SnO_2$ thick film became smaller. However, an agglomerated and extruded surface morphology was observed for the films with Pd addition over 4 wt%. The orthorhombic phase disappeared even at a low Pd doping concentration and a PdO peak was obtained for a high Pd doping concentration. The crack-free Pd-doped $SnO_2$ thick films were able to successfully fill the $30{\mu}m$ gap of the patterned Pt electrodes by the optimized ink dropping method. The prepared 3 wt% Pd-doped $SnO_2$ thick films showed monoxide gas responses ($R_{air}/R_{CO}$) of 4.0 and 35.6 for 100 and 5000 ppm, respectively.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.357-361
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• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.96-100
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• 2005

The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.418-424
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• 2008

The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.137-145
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• 2001

A new process, gelcasting in aqueous medium, to fabricate complex-shaped ceramic core has investigated. The ceramic slurry, mixture of fused silica powder and additives such as zircon and cordierite, was electrosterically stabilizes. The slip was prepared by ball milling of polydispered ceramic suspension with monomer, dimer and dispersant. The rheological behavior of slip was evaluated by viscosity measurement. It was found that the high solid loading of polydispersed ceramic slip, which has low viscosity of 50vol%, is possible to obtained. The viscosity of the slip was significantly dependent upon the amount of polymer dispersant and the formulation of monomer and dimer. The green bodies were fabricated through casting and gelation at room temperature followed by drying at $25^{\circ}C$ for 48hrs under relative humidity of 80~85%. Crack-free green body was successfully fabricated through the above process.

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.207-214
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• 1993

Glass-ceramic monoliths with an ultra-low thermal expansion coefficient have been synthesized by the sol-gel technique using metal alkoxides as starting materials and dimethyl formamide as a drying control chemical additive. The ternary gels: $Li_2O\cdot Al_2O_3\cdot 2, 4 or $6SiO_2$ were obtained by hydrolysis and polycondensation reactions of metal alkoxides of silicon, aluminum and lithium. To produce cylindrical crack-free gel monoliths, excess water was used to the starting solutions and drying rates were controlled precisely to prevent cracking. In conversion process ,${\beta}$-eucryptite, $Li_2O\cdot Al_2O_3\cdot 3SiO_2$ and P-spodumene with ,${\beta}$-quartz solid solution phase were obtained by heating at the range of 750 ~$1000^{\circ}C$. Above $800^{\circ}C$, the ,${\beta}$-spodumene phase increased while ,${\beta}$-eucryptite phase decreased. The thermal expansion coefficient of the crystallized specimens were -15~ $+5{\times}{10^{-7}}/{\circ}C$ over the temperature range from room temperature to $600^{\circ}C$.

• Smart Structures and Systems
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• v.15 no.1
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• pp.135-150
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• 2015

Large concrete structures are prone to cracks and damages over time from human usage, weathers, and other environmental attacks such as flood, earthquakes, and hurricanes. The health of the concrete structures should be monitored regularly to ensure safety. A reliable method of real time communications can facilitate more frequent structural health monitoring (SHM) updates from hard to reach positions, enabling crack detections of embedded concrete structures as they occur to avoid catastrophic failures. By implementing an unconventional mode of communication that utilizes guided stress waves traveling along the concrete structure itself, we may be able to free structural health monitoring from costly (re-)installation of communication wires. In stress-wave communications, piezoelectric transducers can act as actuators and sensors to send and receive modulated signals carrying concrete status information. The new generation of lead zirconate titanate (PZT) based smart aggregates cause multipath propagation in the homogeneous concrete channel, which presents both an opportunity and a challenge for multiple sensors communication. We propose a time reversal based pulse position modulation (TR-PPM) communication for stress wave communication within the concrete structure to combat multipath channel dispersion. Experimental results demonstrate successful transmission and recovery of TR-PPM using stress waves. Compared with PPM, we can achieve higher data rate and longer link distance via TR-PPM. Furthermore, TR-PPM remains effective under low signal-to-noise (SNR) ratio. This work also lays the foundation for implementing multiple-input multiple-output (MIMO) stress wave communication networks in concrete channels.

• Applied Microscopy
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• v.49
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• pp.3.1-3.7
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• 2019

Graphene, which is one of the most promising materials for its state-of-the-art applications, has received extensive attention because of its superior mechanical properties. However, there is little experimental evidence related to the mechanical properties of graphene at the atomic level because of the challenges associated with transferring atomically-thin two-dimensional (2D) materials onto microelectromechanical systems (MEMS) devices. In this study, we show successful dry transfer with a gel material of a stable, clean, and free-standing exfoliated graphene film onto a push-to-pull (PTP) device, which is a MEMS device used for uniaxial tensile testing in in situ transmission electron microscopy (TEM). Through the results of optical microscopy, Raman spectroscopy, and TEM, we demonstrate high quality exfoliated graphene on the PTP device. Finally, the stress-strain results corresponding to propagating cracks in folded graphene were simultaneously obtained during the tensile tests in TEM. The zigzag and armchair edges of graphene confirmed that the fracture occurred in association with the hexagonal lattice structure of graphene while the tensile testing. In the wake of the results, we envision the dedicated preparation and in situ TEM tensile experiments advance the understanding of the relationship between the mechanical properties and structural characteristics of 2D materials.