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http://dx.doi.org/10.5369/JSST.2008.17.6.418

Piezoelectric properties and microstructure of 0.01Pb(Mg1/2W1/2)O3-0.41Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.23PbZrO3thick film with particle size distribution  

Moon, Hi-Gyu (Korea Institute of Science and Technology)
Song, Hyun-Cheol (Korea Institute of Science and Technology)
Kim, Sang-Jong (Korea Institute of Science and Technology)
Choi, Ji-Won (Korea Institute of Science and Technology)
Kang, Chong-Yun (Korea Institute of Science and Technology)
Yoon, Seok-Jin (Korea Institute of Science and Technology)
Publication Information
Journal of Sensor Science and Technology / v.17, no.6, 2008 , pp. 418-424 More about this Journal
Abstract
The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.
Keywords
piezoelectric; attrition milling; thick film; MEMS;
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