• 호남수학학술지
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• 제36권4호
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• pp.863-884
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• 2014

In this paper, we introduce a coupled $\mathcal{N}$-structure which is the generalization of $\mathcal{N}$-structure. Using this coupled $\mathcal{N}$-structure, we have applied in a subtraction algebra and have introduced the notion of a coupled $\mathcal{N}$-subalgebra, a coupled $\mathcal{N}$-ideal. Also the characterization of coupled $\mathcal{N}$-ideal is presented.

• 대한수학회논문집
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• 제28권4호
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• pp.709-721
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• 2013

The notions of coupled N-subalgebra, coupled (positive implicative) N-ideals of $d$-algebras are introduced, and related properties are investigated. Characterizations of a coupled $\mathcal{N}$-subalgebra and a coupled (positive implicative) $\mathcal{N}$-ideals of $d$-algebras are given. Relations among a coupled $\mathcal{N}$-subalgebra, a coupled $\mathcal{N}$-ideal and a coupled positive implicative $\mathcal{N}$-ideal of $d$-algebras are discussed.

• 호남수학학술지
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• 제34권4호
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• pp.585-596
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• 2012

The notions of a $\mathcal{N}$-subalgebra, a (strong) $\mathcal{N}$-ideal of BH-algebras are introduced, and related properties are investigated. Characterizations of a coupled $\mathcal{N}$-subalgebra and a coupled (strong) $\mathcal{N}$-ideals of BH-algebras are given. Relations among a coupled $\mathcal{N}$-subalgebra, a coupled $\mathcal{N}$-ideal and a coupled strong $\mathcal{N}$ of BH-algebras are discussed.

• 한국표면공학회지
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• 제48권5호
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• pp.205-210
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• 2015

NbN coatings were prepared by ICP (inductively coupled plasma) assisted magnetron sputtering from a Nb metal target in $Ar+N_2$ atmosphere at various ICP powers. Effect of ICP on the microstructure, crystalline structure and mechanical properties of NbN coatings was investigated by field emission electron microscopy, X-ray diffraction, atomic force microscopy and nanoindentation measurements. The results show that ICP power has a significant influence on coating microstructure, structure and mechanical properties of NbN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Crystalline structure of NbN coatings were changed from cubic ${\delta}$-NbN to hexagonal ${\beta}-Nb_2N$ with increase of ICP power. The maximum nano hardness of 25.4 GPa with Ra roughness of 0.5 nm was obtained from the NbN coating sputtered at ICP power of 200 W.

• 한국표면공학회지
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• 제55권2호
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• pp.77-83
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• 2022

Nanocrystalline MoN coatings were prepared by inductively coupled plasma magnetron sputtering (ICPMS) changing the plasma power from 0 W to 200 W. The properties of the coatings were analyzed by x-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, nanoindentation tester and semiconductor characterization system. As the ICP power increases, the crystal structure of the MoN coatings changed from a mixed phase of γ-Mo₂N and α-Mo to a single phase γ-Mo₂N. MoN coatings deposited by ICPMS at 200 W showed the most compact microstructure with the highest nanoindentation hardness of 27.1 GPa. The electrical resistivity of the coatings decreased from 691.6 μΩ cm to 325.9 μΩ cm as the ICP power increased.

• 한국세라믹학회지
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• 제50권3호
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• pp.212-217
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• 2013

Ultra hard TiN coatings were fabricated by DC and ICP (inductively coupled plasma) magnetron sputtering techniques. The effects of ICP power, ranging from 0 to 300 W, on the coating microstructure, crystallographic, and mechanical properties were systematically investigated with FE-SEM, AFM, HR-XRD and nanoindentation. The results show that ICP power has a significant influence on the coating microstructure and mechanical properties of TiN coatings. With an increasing ICP power, the film microstructure evolves from an apparent columnar structure to a highly dense one. Grain sizes of TiN coatings decreased from 12.6 nm to 8.7 nm with an increase of the ICP power. A maximum nanohardness of 67.6 GPa was obtained for the coatings deposited at an ICP power of 300 W. The crystal structure and preferred orientation in the TiN coatings also varied with the ICP power, exerting an effective influence on film nanohardness.

• 한국표면공학회지
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• 제46권2호
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• pp.55-60
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• 2013

Superhard TiN coatings were fabricated by DC and ICP (inductively coupled plasma) assisted magnetron sputtering techniques. The effect of ICP power, ranging from 0 to 300 W, on coating microstructure, preferred orientation mechanical properties were systematically investigated with HR-XRD, SEM, AFM and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of TiN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Grain sizes of TiN coatings were decreased from 12.6 nm to 8.7 nm with increase of ICP power. The maximum nanohardness of 67.6 GPa was obtained for the coatings deposited at ICP power of 300 W. Preferred orientation in TiN coatings also vary with ICP power, exerting an effective influence on film nanohardness.

• 대한전자공학회논문지
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• 제22권3호
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• pp.84-90
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• 1985

비균질성 매질(Inhomogeneous medium)내에서 n-선로가 서로 결합한 전송선 구조의 이미탄스(Immit-tance)를 normal mode정수를 사용하여 구하는 방법을 제시했다. 이미탄스를 구하는 절차가 체계적이고 단순하여 공식화할 수 있어 수치계산에 적합하다. 4-선로 8-포트에 관한 이미탄스식을 예로 들었다.

• 한국진공학회지
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• 제7권s1호
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• pp.134-139
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• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• Applied Microscopy
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• 제50권
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• pp.7.1-7.10
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• 2020

Tantalum nitride (TaN_x) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20-100% improved microhardness values were obtained. The detailed microstructural changes of the TaN_x films were characterized utilizing transmission electron microscopy (TEM), as a function of nitrogen gas fraction and ICP power. As nitrogen gas fraction increases from 0.05 to 0.15, the TaN_x phase evolves from body-centered-cubic (b.c.c.) TaN_0.1, to face-centered-cubic (f.c.c.) δ-TaN, to hexagonal-close-packing (h.c.p.) ε-TaN phase. By increasing ICP power from 100 W to 400 W, the f.c.c. δ- TaN phase becomes the main phase in all nitrogen fractions investigated. The higher ICP power enhances the mobility of Ta and N ions, which stabilizes the δ-TaN phase like a high-temperature regime and removes the micro-voids between the columnar grains in the TaN_x film. The dense δ-TaN structure with reduced columnar grains and micro-voids increases the strength of the TaN_x film.