• Title/Summary/Keyword: contamination process

Search Result 736, Processing Time 0.047 seconds

In-situ Process Monitoring Data from 30-Paired Oxide-Nitride Dielectric Stack Deposition for 3D-NAND Memory Fabrication

  • Min Ho Kim;Hyun Ken Park;Sang Jeen Hong
    • Journal of the Semiconductor & Display Technology
    • /
    • v.22 no.4
    • /
    • pp.53-58
    • /
    • 2023
  • The storage capacity of 3D-NAND flash memory has been enhanced by the multi-layer dielectrics. The deposition process has become more challenging due to the tight process margin and the demand for accurate process control. To reduce product costs and ensure successful processes, process diagnosis techniques incorporating artificial intelligence (AI) have been adopted in semiconductor manufacturing. Recently there is a growing interest in process diagnosis, and numerous studies have been conducted in this field. For higher model accuracy, various process and sensor data are required, such as optical emission spectroscopy (OES), quadrupole mass spectrometer (QMS), and equipment control state. Among them, OES is usually used for plasma diagnostic. However, OES data can be distorted by viewport contamination, leading to misunderstandings in plasma diagnosis. This issue is particularly emphasized in multi-dielectric deposition processes, such as oxide and nitride (ON) stack. Thus, it is crucial to understand the potential misunderstandings related to OES data distortion due to viewport contamination. This paper explores the potential for misunderstanding OES data due to data distortion in the ON stack process. It suggests the possibility of excessively evaluating process drift through comparisons with a QMS. This understanding can be utilized to develop diagnostic models and identify the effects of viewport contamination in ON stack processes.

  • PDF

An Assessment of Groundwater Contamination Vulnerability and Priority Areas for Groundwater Management Using GIS and Analytic Hierarchy Process (GIS 및 계층분석법을 이용한 지하수 오염 취약성 평가 및 관리 우선 대상 지역 평가)

  • LEE, Moung-Jin;HYUN, Yun-Jung;HWANG, Sang-Il
    • Journal of the Korean Association of Geographic Information Studies
    • /
    • v.18 no.3
    • /
    • pp.35-51
    • /
    • 2015
  • The purpose of this study is to improve the previous groundwater contamination vulnerability assessment method, apply it to the study area, and select priority areas for groundwater management based on the quantitative analysis of groundwater contamination vulnerability. For this purpose, first, the previous 'potential contamination' based on groundwater contamination vulnerability assessment method was upgraded to the methodology considering 'adaptation capacity' which reduced contamination. Second, the weight of groundwater contamination vulnerability assessment factors was calculated based on the analytical hierarchy process(AHP) and the result of survey targeting groundwater experts. Third, Gyeonggi-do was selected as the study area and the improved methodology and weight were implemented with GIS and actual groundwater contamination vulnerability assessment was carried out. Fourth, the priority area for groundwater contamination management was selected based on the quantitative groundwater contamination vulnerability assessment diagram. The improved detailed groundwater contamination vulnerability assessment factors in this study were a total of 15 factors, and 15 factors were analyzed as new and improved weight with higher 'adaptation capacity' than the assessment factor corresponding to the previous 'potential contamination' in the weight calculation result using AHP. Also, the result of groundwater contamination vulnerability assessment in Gyeonggi Province using GIS showed that Goyang and Gwangmyeong which were adjacent to Seoul had a high groundwater contamination vulnerability and Pocheon and Yangpyeong County had a relatively low groundwater contamination vulnerability. In this study, the previous groundwater contamination vulnerability assessment was improved and applied to study areas actually. The result of this study can be utilized both directly and indirectly for the groundwater management master plan at national and local government level in the future.

토양측정망과 특정토양오염관리대상시설 부지 등에서 토양오염조사의 효율성 제고를 위한 환경정책의 고찰

  • Park Yong-Ha;Park Sang-Yeol;Yang Jae-Eui
    • Proceedings of the Korean Society of Soil and Groundwater Environment Conference
    • /
    • 2006.04a
    • /
    • pp.11-15
    • /
    • 2006
  • Attempts were made to increase an efficiency of soil contamination investigation systems (SCISs) including Soil Network and Special Soil Contamination Management Facility Sites in Korea. In order to increase low efficiencies resulting from inappropriate SCISs, possible policy suggestions are driven based on the results from problem findings of Korean policy and comparisons of policies on industrialized countries including United States, United Kingdom, Germany, the Netherlands and Japan. First, functions of Soil Environment Conservation Act (SECA) on liability should be updated and reinforced to initiate a soil contamination investigation process for stakeholders including an owner(s) or a responsible party(ies) of the potentially soil contamination sites positively. Second, appropriate SCISs should be emerged for implementing the Soil Network and Special Soil Contamination Management Facility Sites properly. Stakeholders for the potentially contaminated sites should easily access and raise the soil contamination issues, and soil contamination investigation implemented by liable and profit environment (consulting) companies should be encouraged. Third, the soil contamination reporting system of SECA needs to change legally responsible. Further more, public announcement system showing soil quality of a site which exceeds a certain scale would be considerable. Fourth, liable environment (consulting) companies should legally execute Soil Environment Assessment of SECA.

  • PDF

Numerical analysis on the flow field and moisture contamination in a dry room (Dry Room내 기류 및 수분오염에 관한 수치적 연구)

  • Lee, Kwan-Soo;Lim, Kwang-Ok;Jung, Young-Sick
    • Proceedings of the KSME Conference
    • /
    • 2000.04b
    • /
    • pp.865-870
    • /
    • 2000
  • The flow and the moisture contamination of the dry room in the manufacturing process of lithium ion battery are analyzed numerically by finite volume method. Standard ${\kappa}-{\varepsilon}$ turbulent model widely applied in predicting turbulent flow is adopted in this study. Moisture contamination and distribution are studied by assumption of two cases; one-point generation and uniform generation throughout the room. To evaluate ventilation efficiency on moisture contamination, scales of ventilation efficiency are introduced. From these analyses, moisture contamination is strongly dependent on the flow field and the radius of moisture contamination can be reduced by closing a part of outlets in a dry room.

  • PDF

Influence of Plasma Corrosion Resistance of Y2O3 Coated Parts by Cleaning Process (세정공정에 따른 Y2O3 코팅부품의 내플라즈마성 영향)

  • Kim, Minjoong;Shin, Jae-Soo;Yun, Ju-Young
    • Journal of the Korean institute of surface engineering
    • /
    • v.54 no.6
    • /
    • pp.365-370
    • /
    • 2021
  • In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y2O3 coated parts used for semiconductor and display plasma process equipment. CF4, O2, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y2O3 was exposed to CF4 plasma, the surface changed from Y2O3 to YF3 and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF3 layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

A Study of the Device Development for the Contamination Detection in the Delivery Line (유체배관 오염 검출장치 개발에 관한 연구)

  • Jeong, Yi Ha;Kim, Byung Han;Hong, Joo-Pyo
    • Journal of the Semiconductor & Display Technology
    • /
    • v.14 no.1
    • /
    • pp.45-49
    • /
    • 2015
  • Process gases with vapor or liquid phase as well as gas phase may experience alteration in itself or be contaminated in the fluid pipe to the process chamber. And thus it result in as particles or defects on the substrates in semiconductor, LCD, LED manufacturing. Purifiers and filters are used for control of contamination. However, none of detection device is available in the delivery line. In this paper, we propose simple device with lighting and sensing in order to predict contamination of the fluid or the tube wall. For some general purpose gases, it showed constant voltage output regardless of the flow rates. But, the smoke and the moisture in the air lowered the figure due to its concentration. Numerical values for several solid and liquid media were obtained. And, the operating temperature tendency was investigated.

Study of point defects caused by a thin contamination layer in a-Si TFT-LCD

  • Oh, Jae-Young;Lee, Jae-Kyun;Yang, Moung-Su;Kang, In-Byeong
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2007.08a
    • /
    • pp.845-848
    • /
    • 2007
  • Analysis of point defects invisible by a microscope has been studied on the a-Si thin film transistor panel. The point defects which were named Invisible Point Defect (IPD) is characterized by no particles or distortion of patterns on a pixel structure and randomly distributed on panels. To investigate the IPD, measurements were carried out: gray level driving, transistor transfer characteristic, focused ion beam (FIB), and secondary ion mass spectrometry (SIMS). The results showed that a contamination layer had a bad influence on an active surface. The contamination layer consisted of oxygen and iron from a water supply line during cleaning process. After the process tuning, IPD has been stabilized.

  • PDF

Effect of PVA Brush Contamination on Post-CMP Cleaning Performance (Post-CMP Cleaning에서 PVA 브러시 오염이 세정 효율에 미치는 영향)

  • Cho, Han-Chul;Yuh, Min-Jong;Kim, Suk-Joo;Jeong, Hae-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.22 no.2
    • /
    • pp.114-118
    • /
    • 2009
  • PVA (polyvinyl alcohol) brush cleaning method is a typical cleaning method for semiconductor cleaning process especially post-CMP cleaning. PVA brush contacts with the wafer surface and abrasive particle, generating the contact rotational torque of the brush, which is the removal mechanism. The brush rotational torque can overcome theoretically the adhesion force generated between the abrasive particle and wafer by zeta potential. However, after CMP (chemical mechanical polishing) process, many particles remained on the wafer because the brush was contaminated in previous post-CMP cleaning step. The abrasive particle on the brush redeposits to the wafer. The level of the brush contamination increased according to the cleaning run time. After cleaning the brush, the level of wafer contamination dramatically decreased. Therefore, the brush cleanliness effect on the cleaning performance and it is important for the brush to be maintained clearly.

A Control Algorithm for Wafer Edge Exposure Process

  • Park, Hong-Lae;Joon Lyou
    • 제어로봇시스템학회:학술대회논문집
    • /
    • 2002.10a
    • /
    • pp.55.4-55
    • /
    • 2002
  • In the semiconductor fabrication, particle contamination is wide-spread and one of major causes to yield loss. Extensive testing has revealed that even careful handling of wafers during processing may cause photo-resist materials to flake off wafer edges. So, to remove the photo-resist at the outer 5mm of wafers, UV(Ultraviolet) rays are exposed. WEE (Wafer Edge Exposure) process station is the system that exposes the wafer edge as prespecified by controlling the positioning mechanism and maintaining the light intensity level In this work, WEE process station has been designed so as to significantly lower the amount of particle contamination which occurs even during the most r...

  • PDF