Acknowledgement
This work was supported by the Technology Innovation Program Development Program-Semiconductor Display Development of Process Technology for Greenhouse Gas Reduction (00155753, GWP 1,000 or Less Chamber Cleaning Gas and its Remote Plasma System for Low GWP Gas) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea).
References
- G. H. Lee, S. Hwang, J. Yu and H. Kim, "Architecture and process integration overview of 3D NAND flash technologies," Applied Sciences, vol. 11, no. 15, p. 6703, 2021.
- Y. Li and K. N. Quader, "NAND flash memory: Challenges and opportunities," Computer, vol. 46, no. 8, pp. 23-29, 2013. https://doi.org/10.1109/MC.2013.190
- S. Lee, "Technology scaling challenges and opportunities of memory devices," in Proc. 2016 IEEE IEDM, San Francisco, CA, USA, 2016, pp. 1-1
- Y. Yanagihara, K. Miyaji and K. Takeuchi, "Control gate length, spacing and stacked layer number design for 3D-stackable NAND flash memory," in Proc. 2012 4th IEEE International Memory Workshop, Milan, Italy, 2012, pp. 1-4.
- S. H. Kim, C. Y. Kim, D. H. Seol, J. E. Choi and S. J. Hong, "Machine learning-based process-level fault detection and part-level fault classification in semiconductor etch equipment," IEEE Trans. Semicond. Manuf., vol. 35, no. 2, pp. 174-185, 2022. https://doi.org/10.1109/TSM.2022.3161512
- P. Dreyfus, F. Psarommatis, G. May and D. Kiritsis, "Virtual metrology as an approach for product quality estimation in Industry 4.0: a systematic review and integrative conceptual framework," Int. J Prod. Res., vol. 60, no. 2, pp. 742-765, 2022. https://doi.org/10.1080/00207543.2021.1976433
- S. S. Fan, C. Hsu, D. Tsai, F. He and C. Cheng, "Data-driven approach for fault detection and diagnostic in semiconductor manufacturing," IEEE Transactions on Automation Science and Engineering, vol. 17, no. 4, pp. 1925-1936, 2020. https://doi.org/10.1109/TASE.2020.2983061
- S. Park, J. Seong, Y. Jang, H. Roh, J. Kwon, J. Lee, S. Ryu, J. Song, K. Roh and Y. Noh, "Plasma information-based virtual metrology (PI-VM) and mass production process control," Journal of the Korean Physical Society, vol. 80, no. 8, pp. 647-669, 2022. https://doi.org/10.1007/s40042-022-00452-8
- J. E. Choi and S. J. Hong, "Machine learning-based virtual metrology on film thickness in amorphous carbon layer deposition process," Measurement: Sensors, vol. 16, p. 100046, 2021.
- B. M. Goldberg, T. Hoder and R. Brandenburg, "Electric field determination in transient plasmas: in situ & non-invasive methods," Plasma Sources Sci. Technol., vol. 31, no. 7, p. 073001, 2022.
- X. Zhu and Y. Pu, "Optical emission spectroscopy in low-temperature plasmas containing argon and nitrogen: determination of the electron temperature and density by the line-ratio method," J. Phys. D, vol. 43, no. 40, p. 403001, 2010.
- H. J. Lee, D. Seo, G. S. May and S. J. Hong, "Use of insitu optical emission spectroscopy for leak fault detection and classification in plasma etching," JSTS: Journal of Semiconductor Technology and Science, vol. 13, no. 4, pp. 395-401, 2013. https://doi.org/10.5573/JSTS.2013.13.4.395
- H. Fatima, M. U. Ullah, S. Ahmad, M. Imran, S. Sajjad, S. Hussain and A. Qayyum, "Spectroscopic evaluation of vibrational temperature and electron density in reduced pressure radio frequency nitrogen plasma," SN Applied Sciences, vol. 3, pp. 1-11, 2021. https://doi.org/10.1007/s42452-021-04651-z
- K. Jo and S. J. Hong, "Performance evaluation of RF generators with in-Situ plasma process monitoring sensors," Journal of Nanoscience and Nanotechnology, vol. 19, no. 10, pp. 6499-6505, 2019. https://doi.org/10.1166/jnn.2019.17057
- S. Yokoyama, M. Hirose and Y. Osaka, "Optical Emission Spectroscopy of the SiH4-NH3-H2 Plasma during the Growth of Silicon Nitride," Japanese Journal of Applied Physics, vol. 20, no. 2, p. L117, 1981.
- G. L. Glish and R. W. Vachet, "The basics of mass spectrometry in the twenty-first century," Nature Reviews Drug Discovery, vol. 2, no. 2, pp. 140-150, 2003. https://doi.org/10.1038/nrd1011
- A. Ushakov, V. Volynets, S. Jeong, D. Sung, Y. Ihm, J. Woo and M. Han, "Study of fluorocarbon plasma in 60 and 100 MHz capacitively coupled discharges using mass spectrometry," Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 26, no. 5, pp. 1198-1207, 2008. https://doi.org/10.1116/1.2965812
- M. J. Kushner, "Plasma chemistry of He/O2/SiH4 and He/N2O/SiH4 mixtures for remote plasma-activated chemical-vapor deposition of silicon dioxide," J. Appl. Phys., vol. 74, no. 11, pp. 6538-6553, 1993.
- H. Ohta, A. Nagashima, M. Hori and T. Goto, "Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition," J. Appl. Phys., vol. 89, no. 9, pp. 5083-5087, 2001. https://doi.org/10.1063/1.1337939
- G. Lu, L. L. Tedder and G. W. Rubloff, "Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH4 and N2O," J. Vac. Sci. Technol. B:Nanotechnol. Microelectron., vol. 17, no. 4, pp. 1417-1423, 1999.