• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.243-247
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• 2003

The effect of accelerated weathering(UV) on three type of ethylene propylene diene monomer(EPDM) composite used for higher voltage insulator were investigated by weather-emoter. For weatherability of EPDM composite, surface resistance, dielectric breakdown strength, change of contact angle, surface composition were measured according to UV accelerated weathering time. From the resort of the measurement of surface resistivity, contact angle of EPDM composite decreased and showed chalking and cracking phenomenon when UV weathweing time was for 1500 h and 2000 h. The analysis of surface atomic composition indicated that surface aluminiu(Al) content was detected due to chalking phenomenon after 1500 h of UV weathering, Oxygen content of all composite increased due to the oxidation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.140.1-140.1
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• 2013

The native silicon-oxide (SiOx) layer at the metal/Silicon interface acts as an electrical resistance to the metal contact of devices. Various methods are proposed for removing this layer, such as sputtering before metal contact formation or high temperature annealing. We studied the chemical evolution of the Au/SiOx/Si system during the annealing at $500^{\circ}C$ using a spatially resolved photoelectron emission method. Scanning photoelectron emission microscopy (SPEM) and core level spectra from local area of the sample show the inhomogeneous oxidation and formation of silicide of Au, as well as valence band spectra reveals the role of Au atoms during the dissociation process of SiOx.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.1
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• pp.50-57
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• 1986

The fabricatoin sequence of GaAs MIS type diode and its electrical characteristics are presented. Used wafers were undoped GaAS wafer adn Te-doped GaAs wafer. Au and AuGe/Ni was used as schottky contact metal and ohmic contact metal respectively. Oxide layer on GaAs surface was formed by water vapor saturated oxide growth technique and dry oxidation technique. In Te-doped GaAs wafer, cutin voltage of MIS type diode was enhanced about 3V comparing with non-oxide layer diode. From light I-V characteristics fill factor of MIS type Te-doped GaAs diode was about 64%, Voc(open circuit voltage) was 0.67V.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.420-420
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• 2011

결정질 태양전지에서 고효율 달성을 위한 LBC(Local Back Contact) 구조의 중요성이 강조되고 있다. LBC 구조에서 후면 passivation 형성을 위한 SiNX layer를 PECVD로 형성 시, 실리콘 bulk 내로 H+ 원자가 침투하여 Boron과 결합하게 되면 Boron이 bulk 내에서 dopant로 작용을 하지 못하게 되어, 후면에서 p-층을 형성하고, 이는 VOC의 저하를 야기 시킨다. 본 연구에서는 LBC 구조에서 후면 passivation 시 bluk 내 B-H결합으로 인한 태양전지 특성 저하 문제를 해결하기 위해, SiNX를 증착하기 전에 얇은 산화막 barrier를 성장시켜 Bulk 내에 H+ 침투를 최소화 하였다. PECVD를 이용한 N2O 플라즈마 처리, HNO3 Wet Chemical Oxidation의 방법을 통해 substrate와 SiNX 사이에 얇은 oxide 층을 형성하였으며, 각각의 조건에 대해 lifetime 측정을 실시하였다. 그 결과 SiON/SiNx를 이용한 막의 lifetime이 $94.5{\mu}s$로 가장 우수하였고, Reference에 비해 25.4% 증가함을 확인할 수 있었다. 그러나 HNO3/SiNx에서는 30.6%, SiON에서는 84.3% 감소함을 확인하였다. Voc 측정 결과 또한 SiON/SiNx를 이용한 막이 670mV로 가장 우수함을 확인할 수 있었다. 본 연구를 통해 LBC구조에서 후면에 얇게 SiON/SiNx막을 형성함으로서 H+이온의 침투를 저지하여 후면 B-H결합을 막아 태양전지 특성 저하를 감소시키는 것을 확인할 수 있었다.

• Journal of Korean Society of Environmental Engineers
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• v.32 no.2
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• pp.219-226
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• 2010

In order to evaluate a removal characteristic of chloramphenicol, salicylic acid and ketoprofen according to dose of oxidants, $Cl_2$, $O_3$ and $O_3/H_2O_2$ are used as oxidants in this study. In case of that $Cl_2$ is used for oxidizing harmaceuticals, chloramphenicol, salicylic acid and ketoprofen is not removed entirely at $Cl_2$ dose rang of 0.5~5.0 mg/L for 60 min. However, removal tendency of salicylic acid is so obviously at $Cl_2$ dose higher than 1.0 mg/L. In addition, as $Cl_2$ dose and contact time increase, the removal rate of salicylic acid is enhanced. When $O_3$ is used as oxidant, chloramphenicol and ketoprofen is not eliminated at $O_3$ dose range of 0.2~2.0 mg/L. On the contrary, 30~70% of salicylic acid is removed at $O_3$ dose of 1.0~5.0 mg/L. Only 30% removal of salicylic acid is achieved at contact time of 5 min, however, the removal rate is enhanced remarkably at contact time over 10 min. In experiments using $O_3/H_2O_2$ as an oxidant, we can find that $O_3/H_2O_2$ is much more effective than $O_3$ only for removal of 3 pharmaceuticals, and the efficiency is raised according to increase of $H_2O_2$ dose. On reaction rate constant and half-life of 3 pharmaceuticals depending on $Cl_2$, $O_3$ and $O_3/H_2O_2$ dose, experiments using $O_3/H_2O_2$ show that oxidation of pharmaceuticals is less effective as the $H_2O_2/O_3$ ratio increases to above pproximately 1.0 related to reaction rate constant. An oxidation of salicylic acid by $Cl_2$ and $O_3$ particularly has a comparatively high reaction rate constant comparing $O_3/H_2O_2$, and thus salicylic acid is easily eliminated in oxidation processes.

• Carbon letters
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• v.12 no.2
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• pp.95-101
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• 2011

To investigate new applications for illite as an additive for carbon-based composites, the composites were prepared with and without illite at different heat-treatment temperatures. The effects of the heat-treatment temperature on the chemical structure, microstructure, and thermal oxidation properties of the resulting composites were studied. As the heat-treatment temperature was increased, silicon carbide SiC formation via carbothermal reduction increased until all the added illite was consumed in the case of the samples heat-treated at $2,300^{\circ}C$. This is attributed to the intimate contact between the $SiO_2$ in the illite and the phenol carbon precursor or the carbon fibers of the preform. Among composites prepared at all temperatures, those with illite addition exhibited fewer pores, voids, and interfacial cracks, resulting in larger bulk densities and lower porosities. A delay of oxidation was not observed in the illite-containing composites prepared at $2,300^{\circ}C$, suggesting that the illite itself absorbed energy for exfoliation or other physical changes. Therefore, if the illite-containing C/C composites can reach a density generally comparable to that of other C/C composites, illite may find application as a filler for C/C composites. However, in this study, the illite-containing C/C composites exhibited low density, even when prepared at a high heat-treatment temperature of $2300^{\circ}C$, although the thermal oxidation of the resulting composites was improved.

• Polymer(Korea)
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• v.25 no.3
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• pp.435-440
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• 2001

The objective of this study was to examine the effect of oxidation inhibitor contents on the work of adhesion, fracture toughness, and impact strength of the unidirectional carbon-carbon composites (C/C composites). The molybdenum disilicide ($MoSi_2$) used as an oxidation inhibitor was impregnated with phenolic resins to improve the anti-oxidation properties of the composites in different concentrations of 4, 12 and 20 wt%. Based on Wilhelmy equation, the work of adhesion of C/C composites was calculated by contact angle methods. Fracture toughness and impact strength were pressured by three-point bending test for the critical intensity factor ($K_IC$) and Izod test method, respectively. As a result, the composites made with $MoSi_2$ resulted in an increasing of both fracture toughness and impact strength. Especially, the composites made with 12 wt% $MoSi_2$ content showed the highest value of London dispersive component, $W_A\;^L$, in work of adhesion, resulting from improving the interfacial adhesion force among fibers, filler, and matrix in this system.

• Environmental Engineering Research
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• v.24 no.3
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• pp.474-483
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• 2019

In this study, iron (Fe) impregnated granular activated carbon (Fe-GAC) has been synthesized and characterized for various properties. Comparative studies have been performed for use of Fe-GAC as an adsorbent as well as a catalyst during catalytic oxidation of hydroquinone (HQ). In the batch adsorption study, effect of process parameter like initial HQ concentration ($C_o=25-1,000mg/L$), pH (2-10), contact time (t: 0-24 h), temperature (T: $15-45^{\circ}C$) and adsorbent dose (w: 5-50 g/L) have been studied. Maximum HQ adsorption efficiency of 75% was obtained at optimum parametric condition of: pH = 4, w = 40 g/L and t = 14 h. Pseudo-second order model best-fitted the HQ adsorption kinetics whereas Langmuir model best-represented the isothermal equilibrium behavior. During oxidation studies, effect of various process parameters like initial HQ concentration ($C_o:20-100mg/L$), pH (4-8), oxidant dose ($C_{H2O2}:0.4-1.6mL/L$) and catalyst dose (m: 0.5-1.5 g/L) have been optimized using Taguchi experimental design matrix. Maximum HQ removal efficiency of 83.56% was obtained at optimum condition of $C_o=100mg/L$, pH = 6, $C_{H2O2}=0.4mL/L,$ and m = 1 g/L. Overall use of Fe-GAC during catalytic oxidation seems to be a better as compared to its use an adsorbent for treatment of HQ bearing wastewater.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• Journal of the Korea Safety Management & Science
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• v.14 no.3
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• pp.175-181
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• 2012

This example was able to focus on the long usage of the pavement that it was merely through the oxidation of the asphalt pavement which it could contact with on the road in the industrial housing complex and correlation regulation of the asphalt subsidence with the load in basic Infra of the configuration. The problem in conjunction with the subsidence (transformation) was interpreted as a problem of the subsidence of each pavement layer to lead the subsidence of the road or the transformation to packaging side asphalt pavement, but the traffic number of times of the heavy vehicle highlights for main problems with the road where is concentrated. In the case of general asphalt paving, it thinks it exposes light, and to study a general phenomenon for the asphalt transformation and a cause for a pavement construction method and the property of material used for pavement and a complement method by the case study at this time of the compound with the heavy vehicle traffic that it can become clear that small success transformation occurs at a point in time when 1-2 years more pass, and a fatigue rift occurs by ultraviolet rays, the oxidation with the contact with the air afterwards, and described beginning to use by the above.