한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2010년도 제39회 하계학술대회 초록집
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- Pages.169-169
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- 2010
The improvement of electrical properties of InGaZnO (IGZO)4(IGZO) TFT by treating post-annealing process in different temperatures.
- Kim, Soon-Jae (School of Information and Communication Engineering, Sungkyunkwan University) ;
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Lee, Hoo-Jeong
(School of Advanced Material Science and Engineering, Sungkyunkwan University) ;
- Yoo, Hee-Jun (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Park, Gum-Hee (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Kim, Tae-Wook (School of Information and Communication Engineering, Sungkyunkwan University) ;
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Roh, Yong-Han
(School of Information and Communication Engineering, Sungkyunkwan University)
- 발행 : 2010.08.18
초록
As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates.
키워드