• The Journal of the Korea institute of electronic communication sciences
• /
• v.9 no.7
• /
• pp.761-766
• /
• 2014

This study performs the analytical investigation of the oscillation voltages at the tanks of the series tuned varactor incorporating balanced common-drain, and common-gate Colpitts VCO which are able to work even at the sub-1V power supply voltages. The results the investigation predicts is verified by the simulation on the circuit behaviors of the two VCOs. The analytical investigation finds that the series tuned varactor incorporating balanced common-gate VCO generates greater oscillation voltage at the tank than the series tuned varactor incorporating balanced common-drain VCO does, which in turn is more suitable for generating the low phase noise oscillation signal from the sub-1V supply voltage than the series tuned varactor incorporating balanced common-drain VCO.

• Journal of Korean Society of Industrial and Systems Engineering
• /
• v.32 no.4
• /
• pp.128-133
• /
• 2009

Brain drain of scientists and technologists to the United States from other countries is a phenomenal issue due to the potential developmental impacts it could have on sending countries. Immigration policies undoubtedly play the major part to shape the human resource outcomes. There has been a common sense explanation to the brain drain trend, which states that the lower English language requirements in the scientific and technology jobs compared to other high skill brain drain jobs offer immigrants more favorable employment opportunities. These and other language related variables are used with standard human capital model variables to assess the validity of the common sense proposition.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.4
• /
• pp.180-183
• /
• 2006

We report for the first time two-bit operational characteristics of a high-density NOR-type polysilicon-oxide-nitride-oxide-silicon (SONOS) array with common source line (CSL). An undesired disturbance, especially drain disturbance, in the NOR array with CSL comes from the two-bit-per-cell operation. To solve this problem, we propose an efficient bulk-biased programming technique. In this technique, a bulk bias is additionally applied to the substrate of memory cell for decreasing the electric field between nitride layer and drain region. The proposed programming technique shows free of drain disturbance characteristics. As a result, we have accomplished reliable two-bit SONOS array by employing the proposed programming technique.

• Journal of Chest Surgery
• /
• v.46 no.3
• /
• pp.223-225
• /
• 2013

Chest draining is a common procedure for treating pleural effusion. Perforation of the heart is a rare often fatal complication of chest drain insertion. We report a case of a 76-year-old female patient suffering from congestive heart failure. At presentation, unilateral opacity of the left chest observed on a chest X-ray was interpreted as massive pleural effusion, so an attempt was made to drain the left pleural space. Malposition of the chest drain was suspected because blood was draining in a pulsatile way from the catheter. Computed tomography revealed perforation of the left ventricle. Mini-thoracotomy was performed and the drain extracted successfully.

• 전기의세계
• /
• v.30 no.10
• /
• pp.645-654
• /
• 1981

A technique has been proposed for fabricating a submicron channel vertical V-groove JFET using standard photolithography. A finite element numerical simulation of the V-groove JFET operation was performed using a FORTRAN progrma run on a Cyber-174 computer. The numerical simulation predicts pentode like common source output characteristics for the p$^{+}$n Vertical V-groove JFET with maximum transconductance representing approximately 6 precent of the zero bias drain conductance value and markedly high drain conductance at large drain voltages. An increase in the acceptor concentration of the V-groove JFET gate was observed to cause a significant increase in the transconductance of the device. Therefore, as above mentioned, this paper is study on the analysis of a Vertical V-groove Junction Field Effect Transistor with Finite Element Method.d.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.20 no.9
• /
• pp.900-905
• /
• 2009

A common drain feedback CMOS wideband LNA with current bleeding and input inductive series-peaking techniques is presented in this paper. DC coupling is adopted between cascode and feedback amplifiers, so that the gain and NF of the LNA can be dynamically controlled by adjusting the bleeding current. The fabricated LNA shows the bandwidth of 2.5 GHz. The high gain mode shows 17.5 dB gain with $1.7{\sim}2.8\;dB$ NF and consumes 27 mW power and the low gain mode has 14 dB gain with $2.7{\sim}4.0\;dB$ NF and dissipates 1.8 mW from 1.8 V supply.

• Smart Media Journal
• /
• v.4 no.2
• /
• pp.55-61
• /
• 2015

A bandwidth-enhanced ultra-wide band (UWB) CMOS balun-LNA is implemented as a part of a software defined radio (SDR) receiver which supports multi-band and multi-standard. The proposed balun-LNA is composed of a single-to-differential converter, a differential-to-single voltage summer with inductive shunt peaking, a negative feedback network, and a differential output buffer with composite common-drain (CD) and common-source (CS) amplifiers. By feeding the single-ended output of the voltage summer to the input of the LNA through a feedback network, a wideband balun-LNA exploiting negative feedback is implemented. By adopting a source follower-based inductive shunt peaking, the proposed balun-LNA achieves a wider gain bandwidth. Two LNA design examples are presented to demonstrate the usefulness of the proposed approach. The LNA I adopts the CS amplifier with a common gate common source (CGCS) balun load as the S-to-D converter for high gain and low noise figure (NF) and the LNA II uses the differential amplifier with the ac-grounded second input terminal as the S-to-D converter for high second-order input-referred intercept point (IIP2). The 3 dB gain bandwidth of the proposed balun-LNA (LNA I) is above 5 GHz and the NF is below 4 dB from 100 MHz to 5 GHz. An average power gain of 18 dB and an IIP3 of -8 ~ -2 dBm are obtained. In simulation, IIP2 of the LNA II is at least 5 dB higher than that of the LNA I with same power consumption.

• Proceedings of the KIPE Conference
• /
• 2001.10a
• /
• pp.212-216
• /
• 2001

Because conventional switching converters have been usually using unbalanced circuit topologies, parasitic capacitance between the drain/collector of an active switch and the frame ground through its heat sink may generate the common-mode conducted noise. We have proposed a balanced switching converter circuit, which is an effective way to reduce the common-mode conducted noise. As an example, a boost converter version of the balanced switching converter was presented and the mechanism of the common-mode noise reduction was explained using equivalent circuits. This paper extends the concept of the balanced switching converter circuit and presents a buck-boost converter version of the balanced switching converter. The feature of common-mode noise reduction is confirmed by experimental results and the mechanism of the common-mode noise reduction is explained using equivalent circuits.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.133-136
• /
• 2000

A new Op-Amp output buffer is presented for driving large-size LCD panels. The proposed Op-Amp is designed by combining a common source and a common drain amplifier to have a high slew rate and to minimize the quiescent current. The proposed circuits are simulated in a high-voltage 0.6${\mu}{\textrm}{m}$ CMOS process, dissipates only 20${\mu}{\textrm}{m}$ static current, and have 83dB open-loop DC gain and 60$^{\circ}$phase margin.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.39 no.4
• /
• pp.25-35
• /
• 2002

This work describes an 8b 200MHz time-interleaved subranging analog-to-digital converter (ADC) based on a single-poly digital CMOS process. Two fine ADCs for lower digital bits of the proposed ADC employ a time-sharing double-channel architecture to increase system speed and a new reference voltage switching scheme to reduce settling time of the reference voltages and chip area. The proposed intermeshed resistor string, which generates reference voltages for fine ADCs, improves linearity and settling time of the reference voltages simultaneously. The proposed sample- and-hold amplifier(SHA) is based on a highly linear common-drain amplifier and passive differential circuits to minimize power consumption and chip area with 8b accuracy and employs input dynamic common mode feedback circuits for high dynamic performance at a 200MHz sampling rate. A new encoding circuit in a coarse ADC simplifies the signal processing between the coarse ADC and two successive fine ADCs.