• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.811-816
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• 2012

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.240-241
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• 2007

In general, high temperature superconducting coated conductors have intermediary buffers layer consisting of seed, diffusion barrier and cap layers. Simplification of the oxide materials buffer architecture in the fabrication of high temperature superconducting coated conductors is required because the deposition of multi-layers buffer architecture leads to a longer manufacturing time and a higher cost process of coated conductors. Thus, single buffer layer deposition seems to be important for practical coated conductor manufacturing process. In this study, a single gradient layered buffer deposition process of YZO for low cost coated conductors has been tried using DC reactive sputtering technique. About several thick YZO gradient single buffer layers deposited by DC co-sputtering process were found to act as a diffusion layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.15-18
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• 2003

Ta-Ti metal alloy is proposed for alternate gate electrode of ULSI MOS device. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method and good interface property was obtained. The sputtering power of each metal target was 100W. Thermal and chemical stability of the electrode was studied by annealing at $500^{\circ}C$ and $600^{\circ}C$ in Ar ambient. X-ray diffraction was measured to study interface reaction and EDX(energy dispersive X-ray) measurement was performed to investigate composition of Ta and Ti element. Electrical properties were evaluated on MOS capacitor, which indicated that the work function of Ta-Ti metal alloy was ${\sim}4.1eV$ compatible with NMOS devices. The measured sheet resistance of alloy was lower than that of poly silicon.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.145-145
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• 2000

M-CeO2 (M : noble metal) catalysts have been widely studied as three-way catalysts and methanol synthesis catalysts. Ceria is thought to play a number of roles in these catalysts. The Ce(IV)/Ce(III) redox pair may store/release gases under oxidizing/reducing conditions, extending the operational window. Additionally, metal-ceria interactions lead to several effects, including the dispersion of the active components and promoting the activation of molecules such as CO or NO. Pd is a promising component to current TWC formulations and behaves particularly well when compared with Pt and Rh-based catalysts for low-temperature oxidation of Co and hydrocarbon. However the effect of Pd-ceria interactions on the physicochemical properties of Pd and the redox properties of Ce is not elucidated yet. In order to know exactly about the metal-ceria interactions, the model study are expecting to give a better environment, resulting in the wide use of the surface science tools. The substrate was Si(100) wafer, on which Ta metal was sputtered as a thickness of 100nm. The CeO2 thin film of 30nm was deposited by using the magnetron sputtering. Spin coating and magnetron sputtering methods were used to make the Pd thin film layer. The prepared sample was investigated by in-situ XPS, AES, SEM and AFM analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.201-201
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• 2010

본 연구에서는 RF magnetron co-sputtering을 이용하여 Zn-O-Ga 구성비에 따른 광투과도 및 전기적 특성을 연구하였다. 타겟으로 ZnO 및 $Ga_2O_3$ 소결체를 이용하였으며, 두 개의 RF magnetron sputter의 RF power를 동시에 조절하여 타겟의 구성비를 조절하였으며, 기판과 타겟의 거리를 25 mm~75 mm 범위 내에 조절하여 거리에 따른 Zn-O-Ga 박막의 광투과 특성 및 전기적 특성을 관찰하였다. $Ga_2O_3$ 소결체의 magnetron sputter의 RF power를 30 watt에서 100 watt로 증가함에 따라 박막내의 Ga 성분은 0.5%에서 7.4%로 증가하였으며 Zn 성분은 46.3%에서 40.9%로 O성분은 53.2%에서 51.6%로 각각 줄어들었다. 이에 따라 ZnO의 우선방위 (002) 결정각($2{\theta}$)은 34.24에서 33.87로 줄어들었으며, 이동도 $5.5\;cm^2/Vs$ 에서 $1.99\;cm^2/Vs$ 정도로 감소하는 경향을 보였다. 광투과도는 가시광선 영역에서 85% 이상 보였으며, carrier 밀도는 $0.5\;{\sim}\;4.0^*10^{20}/cm^3$로 증가함에 따라 이동도는 $1.5{\sim}5.5\;cm^2/Vs$로 투명전도막의 특성을 보였다.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.713-717
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• 2001

The magnetic and magnetostrictive properties of amorphous Tb/sub 45.7/Fe/sub 54.3-x/Co/sub x/ and Tb/sub 50.2/Fe/sub 49.8-x/Co/sub x/ (0≤x≤9.6) thin films have systematically been investigated. The films were fabricated by rf magnetron sputtering using a composite target which consists of a Fe plate and Tb, Co chips. The microstructure mainly consists of an amorphous phase. Excellent intrinsic and low magnetic-field-magnetostrictive properties were achieved in Tb/sub 45.7/Fe/sub 54.3-x/Co/sub x/ and Tb/sub 50.2/Fe/sub 49.8-x/Co/sub x/ (0≤x≤9.6). The magnetostriction of 130 ppm was obtained with low field of 100 Oe. The intrinsic magnetostriction(applied field, 5 kOe) were increased from 330ppm to 400ppm.

• Journal of the Korean Magnetics Society
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• v.16 no.4
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• pp.197-200
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• 2006

Amorphous alloys of Co-rich magnetic amorphous films are well known as thpical soft magnetic alloys. They are used for many kinds of electric and electronic parts such as magnetic recording heads, transformers and inductors. CoFeHfO thin films were prepared by RF magnetron reactive sputtering. The films were deposited onto Si(100) substrates with a power of 300 W at room temperature. The reactive gas was introduced up to 10% ($O_2$/(Ar + $O_2$)) during deposition, and the $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film exhibit excellent soft magnetic properties : saturation magnetization ($4{\pi}M_s$) of 19kG, magnetic coercivity ($H_c$) of 0.37 Oe, anisotropy field ($H_k$) of 48.62 Oe, and an electrical property is also shown to be as high as 300 ${\mu}{\Omega}cm$. It is assumed that the good soft magnetic properties of $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film results from high electrical resistivity and large anisotropy field.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.266.2-266.2
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• 2016

최근 디스플레이 산업의 확대에 따라 투명 전도 산화물(Transparent Conducting Oxides:TCOs)의 수요가 급증하고 있다. 이 중 ZnO는 wide bandgap (3.37eV)와 large exciton binding energy (60meV)의 값을 가져 차세대 투명 전도 산화물, LED와 LD 등의 소자 소재로 각광받고 있다. ZnO는 electron을 내어놓는 native defect 때문에 기본적으로 n-type 물성을 띈다. 그래서 dopant를 이용해 p-type ZnO를 제작할 때 native defect를 줄이는 것이 중요한 요점이 된다. 이 때 buffer layer를 사용하여 native defect를 줄이는 방법이 사용되고 있다. 본연구에서는 RF-magnetron sputtering법을 이용하여 c-plane sapphire 기판 위에 다양한 조건의 ZnO buffer layer를 증착하고, 그 위에 ZnO:(Al,P) co-doping한 APZO를 증착하였다. ZnO buffer layer 증착조건의 변수는 증착온도와 Ar:O2의 비율을 변수로 두었다. 이러한 박막을 FE-SEM, XRD, Hall effect measurement, AFM을 통하여 미세구조와 물성을 관찰하였다. 이 때 APZO보다 낮은 증착온도에서 ZnO buffer layer가 증착되면 APZO를 증착하는 동안 chamber 내부에서 열처리하는 효과를 얻게 되고, UHV(Ultra High Vaccum)에서 열처리 될 때 ZnO buffer layer의 mophology와 결정성이 변하게 되는 모습을 관찰아혔다. 또한 본 실험을 통해 ZnO buffer layer의 증착 온도가 APZO의 증착온도보다 높을 때 제어 가능한 실험이 됨을 확인 할 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.289-293
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• 2013

We have studied structural, optical, and electrical properties of the Ga-doped ZnO (GZO) thin films being usable in transparent conducting oxides. The GZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of GZO for transparent conducting oxides, the Ar gas in sputtering process was varied as 40, 60, 80 and 100 sccm, respectively. As reaction gas decreased, the crystallinity of GZO thin film was increased, the optical bandgap of GZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in reaction gas. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with decreasing reaction gas. The structural, optical, and electrical properties of the GZO thin films were affected by Ga dopant content in GZO thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.8-11
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• 1997

This study makes SrTiO$_{3}$ with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si/SrTiO$_{3}$ and Si/Ti/SrTiO$_{3}$ of MOS structure using Ti as buffer layer, measures and examines the electrical features with optical refractive index, absorption rate, permittivity, photon energy and as a result, ferroelectrics oscillation occurrs by the interaction within a film by light temperature and the absorption of thin film with Ti as buffer layer is increased. It is found that the pea\ulcorner of permittivity value of Ti/SrTiO$_{3}$ thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory In the nature of permittivity by photon energy, imaginary value is higher and current variation slope of thin film of thickness SrTiO$_{3}$ has lower values in reverse bias.