DOI QR코드

DOI QR Code

Soft Magnetic Properties of CoFeHfO Thin Films

CoFeHfO 박막의 자기적 특성

  • Lee, K.E. (Department of Materials Science and Engineering, Chungnam National University) ;
  • Tho, L.V. (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, S.H. (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, C.G. (ReCAMM, Chungnam National University) ;
  • Kim, C.O. (ReCAMM, Chungnam National University)
  • Published : 2006.08.01

Abstract

Amorphous alloys of Co-rich magnetic amorphous films are well known as thpical soft magnetic alloys. They are used for many kinds of electric and electronic parts such as magnetic recording heads, transformers and inductors. CoFeHfO thin films were prepared by RF magnetron reactive sputtering. The films were deposited onto Si(100) substrates with a power of 300 W at room temperature. The reactive gas was introduced up to 10% ($O_2$/(Ar + $O_2$)) during deposition, and the $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film exhibit excellent soft magnetic properties : saturation magnetization ($4{\pi}M_s$) of 19kG, magnetic coercivity ($H_c$) of 0.37 Oe, anisotropy field ($H_k$) of 48.62 Oe, and an electrical property is also shown to be as high as 300 ${\mu}{\Omega}cm$. It is assumed that the good soft magnetic properties of $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film results from high electrical resistivity and large anisotropy field.

RF magnetron reactive sputtering법으로 CoFeHfO 박막을 상온에서 제작하여 산소분압에 따른 포화자화, 보자력, 이방성자계를 조사하였다. 최적조건인 산소분압 8%에서 제조한 $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ 박막은 포자자속밀도($4{\pi}M_s$) 19kG, 보자력($H_c$) 0.37Oe, 이방성자계($H_k$) 48.62Oe의 우수한 연자성을 나타내었다. CoFeHfO 박막의 전기비저항은 산소분압이 늘어남에 따라 증가하는 경향을 나타내었으며 우수한 연자기적 성질을 가지는 $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ 박막의 경우, 300 ${\mu}{\Omega}cm$의 높은 전기비저항과 48.62 Oe의 높은 이방성자계 때문에 $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$박막이 고주파에서 우수한 연자기 특성을 가지는 것으로 사료된다.

Keywords

References

  1. S. Ohnuma, H. Fujimori, T. Masumoto, X. Y. Xiong, D. H. Ping, and K. Hono, Appl. Phys. Lett., 82, 6 (2003)
  2. B. K. Min, J. S. Song, H. S. Kim, and S. J. Jeong, J. Appl. Phys., 91, 8456 (2002) https://doi.org/10.1063/1.1449455
  3. L. H. Chen, T. J. Klemmer, K. A. Ellis, R. B. van Dover, and S. Jin, J. Appl. Phys., 87, 5858 (2000) https://doi.org/10.1063/1.372546
  4. S. Ikeda, I. Tagawa, Y. Uehara, T. Kubomiya, J. Kane, A. Kakehi, and A. Chikazawa, IEEE Trans. Magn., 38, 2219 (2002) https://doi.org/10.1109/TMAG.2002.802664
  5. W. D. Li, O. Kitakami, and Y. Shimada, J. Appl. Phys., 83, 6661 (1998) https://doi.org/10.1063/1.367704