• Title/Summary/Keyword: clock driver

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Design of Duty Control Osci1lator For Liquid Crystal Display Systems (LCD System용 가변 Duty Oscillator의 설계)

  • 홍순양;조준동
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.41-44
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    • 2001
  • 본 논문은 액정 Driver IC에 사용되a는 내부 기준 clock 발생 및 Voltage Converter에 boosting을 하기 위한 clock을 제공하는 Oscillator 설계 및 구현 하였다 LCD Driver IC에서 발생되는 Oscillator clock 은 고속의 clock신호는 필요로 하지 않으나 LCD display에 관련된 frame 주파수에 직접적인 영향을 주므로 중심 주파수 결정 및 duty비에 따른 주파수 제어가 매우 중요하다. 본 논문에서는 가변 duty를 적용하는 LCD system에 적용할 수 있는 가변 duty oscillator를 소개한다. Process는 0.35um, 12V공정을 사용하였다.

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A gate driver circuit for IGZO TFTs driven by two clock signals

  • Kim, Yeon Kyung;Kim, Joon Dong;Lym, Hong Kyun;Kim, Sang Yeon;Oh, Hwan Sool;Park, Kee Chan
    • Journal of Information Display
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    • v.13 no.4
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    • pp.179-183
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    • 2012
  • In this paper, a gate driver circuit for In-Ga-Zn-O thin-film transistors (TFTs) driven by only two clock signals is reported. In this circuit, the TFTs are turned off with a negative $V_{GS}$ by the two clock signals. As a result, it works properly and suppresses power consumption increase even though the TFT $V_T$ shifts in the negative direction.

A design on a tri-state clock driver using charge recycling (Charge recycling 기술을 이용한 tri-state clock driver)

  • Kim, Si-Nai;Im, Jong-Man;Yoon, Han-Sub;Kwack, Kae-Dal
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.661-662
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    • 2006
  • This paper introduces a CMOS clock driver that shows a high efficiency of electric power (lower power consumption) with the supply of lower voltage(VDD), by taking advantage of charge recycling technology. Comparing with the existing structure, this driver showed the improved maximum efficiency of electric power; 72% and 68%, with the supplied voltage of 1.8v and 1.2v, respectively. Since the output waveform shows the tri-state operating region, utilization is expected in the digital integrated circuits.

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A single-clock-driven gate driver using p-type, low-temperature polycrystalline silicon thin-film transistors

  • Kim, Kang-Nam;Kang, Jin-Seong;Ahn, Sung-Jin;Lee, Jae-Sic;Lee, Dong-Hoon;Kim, Chi-Woo;Kwon, Oh-Kyong
    • Journal of Information Display
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    • v.12 no.1
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    • pp.61-67
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    • 2011
  • A single-clock-driven shift register and a two-stage buffer are proposed, using p-type, low-temperature polycrystalline silicon thin-film transistors. To eliminate the clock skew problems and to reduce the burden of the interface, only one clock signal was adopted to the shift register circuit, without additional reference voltages. A two-stage, p-type buffer was proposed to drive the gate line load and shows a full-swing output without threshold voltage loss. The shift register and buffer were designed for the 3.31" WVGA ($800{\times}480$) LCD panel, and the fabricated circuits were verified via simulations and measurements.

High-Efficiency Charge Pump for CMOS Image Sensor (CMOS 이미지 센서를 위한 고효율 Charge Pump)

  • Kim, Ju-Ha;Jun, Young-Hyun;Kong, Bai-Sun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.5
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    • pp.50-57
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    • 2008
  • In this paper, a high-efficiency charge pump for use in CMOS image sensor(CIS) is proposed. The proposed charge pump pursues high pumping efficiency by minimizing the switching and reversion losses by taking advantage of operation characteristics of CIS. That is, the proposed charge pump minimizes the switching loss by dynamically controlling the size of clock driver, pumping capacitor, and charge transfer switch based on the operation phase of CIS pixel sensor. The charge pump also minimizes the reversion loss by guaranteeing a sufficient non-overlapping period of local clocks using a tri-state local clock driver adapting the schmitt trigger. Comparison results using a 0.13-um CMOS process technology indicate that the proposed charge pump achieves up to 49.1% reduction on power consumption under no loading current condition as compared to conventional charge pump. They also indicate that the charge pump provides 19.0% reduction on power consumption under the maximum loading current condition.

A DC-DC Converter Design with Internal Capacitor for TFT-LCD Driver IC (TFT -LCD 구동 IC용 커패시터 내장형 DC-DC 변환기 설계)

  • Lim Gyu-Ho;Kang Hyung-Geun;Lee Jae-Hyung;Sohn Ki-Sung;Cho Ki-Seok;Baek Seung-Myun;Sung Kwan-Young;Li Long-Zhen;Park Mu-Hun;Ha Pan-Bong;Kim Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.7
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    • pp.1266-1274
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    • 2006
  • A non-overlap boosted-clock charge pump(NBCCP) with internal pumping capacitor, an advantageous circuit from a minimizing point of TFT-LCD driver IC module, is proposed in this paper. By using the non-overlap boosted-clock swinging in 2VDC voltage, the number of pumping stages is reduced to half and a back current of pumping charge from charge pumping node to input stage is also prevented compared with conventional cross-coupled charge pump with internal pumping capacitor. As a result, pumping current of the proposed NBCCP circuit is increased more than conventional cross-coupled charge pump, and a layout area is decreased. A proposed DC-DC converter for TFT-LCD driver IC is designed with $0.18{\mu}m$ triple-well CMOS process and a test chip is in the marking.

Design of a 2.5 Gbps CMOS optical transmitter with 10:1 serializer using clock generation method (Reference clock 생성기를 이용한 10:1 데이터 변환 2.5 Gbps 광 송신기 설계)

  • Kang, Hyung-Won;Kim, Kyung-Min;Choi, Young-Wan
    • 한국정보통신설비학회:학술대회논문집
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    • 2005.08a
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    • pp.159-165
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    • 2005
  • The proposed optical transmitter is composed of FF(flip flop) , PLL (phase locked loop), reference clock generator, serializer and LD driver 10x250 Mb/s data arrays are translated to the 2.5 Gb/s data signal by serializer. In this case, 1 data bus is allocated usually as a reference clock for synchronization. In this proposed optical transmitter, 125 MHz reference clock is generated from 10x250 Mb/s data arrays by reference clock generator. From this method. absent of reference clock bus is available and more data transmission become possible. To achieve high speed operation, the serializer circuit is designed as two stacks. For 10:1 serialization, 10 clocks that have 1/10 lambda differences is essential, so the VCO (voltage controlled oscillator) composed of 10 delay buffers is designed. PLL is for runing at 250 MHz, and dual PFD(phase frequency detector) is adopted for fast locking time. The optical transmitter is designed by using 0.35 um CMOS technology.

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A Dual-Output Integrated LLC Resonant Controller and LED Driver IC with PLL-Based Automatic Duty Control

  • Kim, HongJin;Kim, SoYoung;Lee, Kang-Yoon
    • Journal of Power Electronics
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    • v.12 no.6
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    • pp.886-894
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    • 2012
  • This paper presents a secondary-side, dual-mode feedback LLC resonant controller IC with dynamic PWM dimming for LED backlight units. In order to reduce the cost, master and slave outputs can be generated simultaneously with a single LLC resonant core based on dual-mode feedback topologies. Pulse Frequency Modulation (PFM) and Pulse Width Modulation (PWM) schemes are used for the master stage and slave stage, respectively. In order to guarantee the correct dual feedback operation, Phased-Locked Loop (PLL)-based automatic duty control circuit is proposed in this paper. The chip is fabricated using $0.35{\mu}m$ Bipolar-CMOS-DMOS (BCD) technology, and the die size is $2.5mm{\times}2.5mm$. The frequency of the gate driver (GDA/GDB) in the clock generator ranges from 50 to 425 kHz. The current consumption of the LLC resonant controller IC is 40 mA for a 100 kHz operation frequency using a 15 V supply. The duty ratio of the slave stage can be controlled from 40% to 60% independent of the frequency of the master stage.

A 2.5Gbps High speed driver for a next generation connector (차세대 연결망용 2-SGbps급 고속 드라이버)

  • 남기현;김수원
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.53-56
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    • 2001
  • With the ever increasing clock frequency and integration level of CMOS circuits, I/O(input/output) and interconnect issues are becoming a growing concern. In this thesis, we propose the 2.5Gbps high speed input driver This driver consists of four different blocks, which are the high speed serializer , PECL(pseudo emitter coupled logic) Line Driver, PLL(phase lock loop) and pre-emphasis signal generator. The proposed pre-emphasis block will compensate the high frequency components of the 2.5Gbps data signal. Using the pre-emphasis block, we can obtain 2.5Gbps data signal with differential peak to peak voltage about 900 m $V_{p.p}$ This driver structure is on fabrication in 2.5v/10.25um 1poly, 5metal CMOS process.

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A 200MHz high speed 16M SDRAM with negative delay circuit (부지연 회로를 내장한 200MHz 고속 16M SDRAM)

  • 김창선;장성진;김태훈;이재구;박진석;정웅식;전영현
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.4
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    • pp.16-25
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    • 1997
  • This paper shows a SDRAM opeating in 200MHz clock cycle which it use data interleave and pipelining for high speed operation. We proposed NdC (Negative DEaly circuit) to improve clock to access time(tAC) characteristics, also we proposed low power WL(wordline)driver circit and high efficiency VPP charge-pump circit. Our all circuits has been fabricated using 0.4um CMOS process, and the measured maximum speed is 200Mbytes/s in LvTTL interface.

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