• Korean Chemical Engineering Research
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• 제44권5호
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• pp.513-519
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• 2006

본 연구에서는 유리(glass)와 석영(quartz)을 재질로 사용하여 MEMS(micro-electro mechanical systems) 공정을 통해 전기영동(electrophoresis)을 위한 microchip을 제작하였다. UV 광이 실리콘(silicon)을 투과하지 못하는 점에 착안하여, 다결정 실리콘(polycrystalline Si, poly-Si) 층을 채널 이외의 부분에 증착시킨 광 차단판(optical slit)에 의해 채널에만 집중된 UV 광의 신호/잡음비(signal-to-noise ratio: S/N ratio)를 크게 향상시켰다. Glass chip에서는 증착된 poly-Si 층이 식각 마스크(etch mask)의 역할을 하는 동시에 접합표면을 적절히 형성하여 양극 접합(anodic bonding)을 가능케 하 였다. Quartz 웨이퍼에 비해 불순물을 많이 포함하는 glass 웨이퍼에서는 표면이 거친 채널 내부를 형성하게 되어 시료용액의 미세한 흐름에 영향을 미치게 된다. 이에 따라, HF와 $NH_4F$ 용액에 의한 혼합 식각액(etchant)을 도입하여 표면 거칠기를 감소시켰다. 두 종류의 재질로 제작된 채널의 형태와 크기를 관찰하였고, microchip electrophoresis에 적용한 결과, quartz과 glass chip의 전기삼투 흐름속도(electroosmotic flow velocity)가 0.5와 0.36 mm/s로 측정되었다. Poly-Si 층에 의한 광 차단판의 존재에 의해, peak의 S/N ratio는 quartz chip이 약 2배 수준, glass chip이 약 3배 수준으로 향상되었고, UV 최대흡광 감도는 각각 약 1.6배 및 1.7배 정도 증가하였다.

• 대한기계학회논문집A
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• 제28권4호
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• pp.435-442
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• 2004

This paper presents a hermetic MEMS on-chip package bonded by a closed-loop AuSn solder-line. We design three different package specimens, including a substrate heated specimen without interconnection-line (SHX), a substrate heated specimen with interconnection-line (SHI) and a locally heated specimen with interconnection-line (LHI). Pressurized helium leak test has been carried out for hermetic seal evaluation in addition to the critical pressure test for bonding strength measurement. Substrate heating method (SHX, SHI) requires the bonding time of 40min. at 400min, while local heating method (LHI) requires 4 min. at the heating power of 6.76W. In the hermetic seal test. SHX, SHI and LHI show the leak rates of 5.4$\pm$6.7${\times}$$^{-10}$ mbar-l/s, 13.5$\pm$9.8${\times}$$^{-10}$ mbar-l/s and 18.5$\pm$9.9${\times}$$^{-10}$ mbar-l/s, respectively, for an identical package chamber volume of 6.89$\pm$0.2${\times}$$^{-10}$. In the critical pressure test, no fracture is found in the bonded specimens up to the applied pressure of 1$\pm$0.1MPa, resulting in the minimum bonding strength of 3.53$\pm$0.07MPa. We find that the present on-chip packaging using a closed AuSn solder-line shows strong potential for hermetic MEMS packaging with interconnection-line due to the hermetic seal performance and the shorter bonding time for mass production.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.625-631
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• 2009

In this thesis, lateral thermosonic bonding with ACFs was investigated as a process to make high reliability joints for FPD fabrication. Conditions for thermosonic and thermocompression bonding with ACFs were determined and used to make specimens in a driving test jig for testing of bond reliability by thermal shock. The results showed that thermosonic bonding temperature of $199\;^{\circ}C$ and bonding time of 1s produced bonds with good reliability. Additionally, thermosonic bonding temperature and time were reduced and thermal shock test results compared to this proposed curing condition. It is concluded that theromosonic bonding with ACFs can be effectively applied to reduce bonding temperature and time compared with that of thermocompression bonding.

• 한국산학기술학회논문지
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• 제9권3호
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• pp.649-657
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• 2008

본 논문은 트랜지스터 다이, 칩 커패시터, 커패시터와 트랜지스터 다이를 연결하는 와이어 본딩으로 구성된 질화갈륨 고출력 트랜지스터 패키지에 있어서, 그 출력 성능의 최적화에 대하여 언급한다. 와이어 본딩 방법에 따른 출력 전력의 최적화된 결과와, 와이어 본딩과 바이어스 조건에 따른 3차 상호변호 특성 최적화 등이 기술되어 있다. 또한 본 논문에는 제한된 면적내의 고출력 트랜지스터 패키지에서 와이어 본딩으로 구현된 인덕턴스에 따라 얼마나 그 출력 성능이 민감하게 반응하는지를 시뮬레이션을 통하여 제시하고 있다.

• 대한기계학회논문집A
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• 제28권9호
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• pp.1408-1414
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• 2004

The use of flip-chip technology has many advantages over other approaches for high-density electronic packaging. ACF (anisotropic conductive film) is one of the major flip-chip technologies, which has short chip-to-chip interconnection length, high productivity, and miniaturization of package. In this study, thermal fatigue lift of ACF bonding flip-chip package has been predicted. Elastic and thermal properties of ACF were measured by using DMA and TMA. Temperature dependent nonlinear hi-thermal analysis was conducted and the result was compared with Moire interferometer experiment. Calculated displacement field was well matched with experimental result. Thermal fatigue analysis was also conducted. The maximum shear strain occurs at the outmost located bump. Shear stress-strain curve was obtained to calculate fatigue life. Fatigue model for electronic adhesives was used to predict thermal fatigue life of ACF bonding flip-chip packaging. DOE (Design of Experiment) technique was used to find important design factors. The results show that PCB CTE (Coefficient of Thermal Expansion) and elastic modulus of ACF material are important material parameters. And as important design parameters, chip width, bump pitch and bump width were chose. 2$^{nd}$ DOE was conducted to obtain RSM equation far the choose 3 design parameter. The coefficient of determination ($R^2$) for the calculated RSM equation is 0.99934. Optimum design is conducted using the RSM equation. MMFD (Modified Method for feasible Direction) algorithm is used to optimum design. The optimum value for chip width, bump pitch and bump width were 7.87mm, 430$\mu$m, and 78$\mu$m, respectively. Approximately, 1400 cycles have been expected under optimum conditions. Reliability analysis was conducted to find out guideline for control range of design parameter. Sigma value was calculated with changing standard deviation of design variable. To acquire 6 sigma level thermal fatigue reliability, the Std. Deviation of design parameter should be controlled within 3% of average value.

• 마이크로전자및패키징학회지
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• 제13권2호
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• pp.21-26
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• 2006

NCA의 물성이 미세피치 Chip on glass (COG) 접합부의 신뢰성에 미치는 영향을 연구하였다. Si 위에 Sn을, 유리기판 위에 In을 열증발 방법으로 증착하고 lift-off 방법을 이용하여 $30{\mu}m$ 피치를 가지는 솔더범프를 형성하였으며 열압착 방법으로 $120^{\circ}C$에서 In 범프와 Sn 범프를 접합하였다. 접합할 때 세 종류의 Non conductive adhesive (NCA)를 적용하였다. 신뢰성은 $0^{\circ}C$와 $100^{\circ}C$ 사이로 열충격시험을 2000회까지 실시하여 평가하였다. 4단자 저항측정법을 이용하여 접합부의 저항을 측정하였다. 필러의 양이 증가할수록 열충격시험 후 접합부의 저항이 가장 적게 증가하여 신뢰성이 우수하였다. 필러의 양이 증가할수록 NCA의 열팽창이 작아지기 때문이다.

• 한국분말재료학회지
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• 제15권2호
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• pp.119-124
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• 2008

To increase pot life in the formulation mixed with bisphenol F epoxy resin, anhydride-based curing agent, and imidazole-based curing accelerator powders as a paste material for high-speed RFID chip bonding, size variation of the imidazole-based powders and a coating method of the powders were adopted in this study. In experiment with regard to the size variation, the pot life was not outstandingly increased. Through the idea using the coating method, however, the pot life was increased up to 4.25 times in comparison with the addition of initial imidazole-based powders. Consequently, successive bonding of RFID chip could be performed with very short time of 5sec using the suggested formulation having improved pot life.

• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.7-13
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• 2019

Power module is getting attention from electronic industries such as solar cell, battery and electric vehicles. Transient liquid phase (TLP) boding, sintering with Ag and Cu powders and wire bonding are applied to power module packaging. Sintering is a popular process but it has some disadvantages such as high cost, complex procedures and long bonding time. Meanwhile, TLP bonding has lower bonding temperature, cost effectiveness and less porosity. However, it also needs to improve ductility of the intermetallic compounds (IMCs) at the joint. Wire boding is also an important interconnection process between semiconductor chip and metal lead for direct bonded copper (DBC). In this study, TLP bonding using Sn-based solders and wire bonding process for power electronics packaging are described.

• Journal of Welding and Joining
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• 제23권5호
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• pp.55-60
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• 2005

A precise bonding technique, transmission laser bonding using energy transfer, for polymer micro devices is presented. The irradiated IR laser beam passes through the transparent part and absorbed on the opaque part. The absorbed energy is converted into heat and bonding takes place. In order to optimize the bonding quality, the temperature profile on the interface must be obtained. Using optical measurements of the both plates, the absorbed energy can be calculated. At the wavelength of 1100nm $87.5\%$ of incident laser energy was used for bonding process from the calculation. A heat transfer model was applied for obtaining the transient temperature profile. It was found that with the power of 29.5 mW, the interface begins to melt and bond each other in 3 sec and it is in a good agreement with experiment results. The transmission IR laser bonding has a potential in the local precise bonding in MEMS or Lab-on-a-chip applications.

• ETRI Journal
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• 제36권3호
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• pp.343-351
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• 2014

For the fine-pitch application of flip-chip bonding with semiconductor packaging, fluxing and hybrid underfills were developed. A micro-encapsulated catalyst was adopted to control the chemical reaction at room and processing temperatures. From the experiments with a differential scanning calorimetry and viscometer, the chemical reaction and viscosity changes were quantitatively characterized, and the optimum type and amount of micro-encapsulated catalyst were determined to obtain the best pot life from a commercial viewpoint. It is expected that fluxing and hybrid underfills will be applied to fine-pitch flip-chip bonding processes and be highly reliable.