• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.29 no.4
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• pp.45-52
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• 1997

This study was carried out to investigate the adsorption characteristics of cationic starches onto BKP, BCTMP and talc. Concentration of the unadsorbed cationic starch contained in the supernatant of the pulp or talc slurries was determined using a spectoscopy method and the adsorption isotherm of cationc starch was constructed. When the equilibrium concentration of the cationic starch was low, almost complete adsorption of the starch onto BKP and BCTMP was observed. This indicates that electrostatic attraction is the main driving force for the adsorption of cationc starches onto pulps. BCTMP adsorbed greater amount of cationic starches than BKP since it contained more anionc functional groups on its surface. The adsorption amount of the cationic starch increased as the cationicity of the starches decreased. Surface charge density of the pulp and starch adsorption increased as the pH of the pulp slurry increased. Adsorption amount of the cationic starch onto talc was lower than that onto the pulp due to its low charge density and hydrophobic surface property.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.17-24
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• 2004

Quantum effects in the poly-gate are analyzed in two dimensions using the density-gradient method, and their impact on the short-channel effect of double-gate MOSFETs is investigated. The 2-D effects of quantum mechanical depletion at the gate to sidewall oxide is identified as the cause of large charge-dipole formation at the corner of the gate. The bias dependence of the charge dipole shows that the magnitude of the dipole peak-value increases in the subthreshold region and there is a large difference in carrier and potential distribution compared to the classical solution. Using evanescent-nude analysis, it is found that the quantum effect in the poly-gate substantially increases the short-channel effect and it is more significant than the quantum effect in the Si film. The penetration of potential contours into the poly-gate due to the dipole formation at the drain side of the gate corner is identified as the reason for the substantial increase in short-channel effects.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.32 no.3
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• pp.199-203
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• 2019

The penetration depth of a hypervelocity jet exceeding 4 km/s is described by the density ratio of the jet and the target. In the case of the same density, the difference in strength between the targets does not affect the penetration depth difference. This study focuses on the "strength irrelevance" of such a hypervelocity jet. For this purpose, the change of crater pressure caused by shaped charge jet(SCJ) was calculated by finite element analysis and the possibility of polymorphic phase transition of steel material was investigated. Hypervelocity jets were found to cause polymorphic phase transitions in the steel target craters, and the decrease in the fracture toughness of the target is predicted as the cause of the strength irrelevance.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.1-211.1
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• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• International Journal of Naval Architecture and Ocean Engineering
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• v.11 no.1
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• pp.572-583
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• 2019

This paper aims to assess the applicability of the Runge Kutta Discontinuous Galerkin-Direct Ghost Fluid Method to the internal explosion inside a water-filled tube, which previously was studied by many researchers in separate works. Once the explosive charge located at the inner center of the water-filled tube explodes, the tube wall is subjected to an extremely high intensity fluid loading and deformed. The deformation causes a modification of the field of fluid flow in the region near the water-structure interface so that has substantial influence on the response of the structure. To connect the structure and the fluid, valid data exchanges along the interface are essential. Classical fluid structure interaction simulations usually employ a matched meshing scheme which discretizes the fluid and structure domains using a single mesh density. The computational cost of fluid structure interaction simulations is usually governed by the structure because the size of time step may be determined by the density of structure mesh. The finer mesh density, the better solution, but more expensive computational cost. To reduce such computational cost, a non-matched meshing scheme which allows for different mesh densities is employed. The coupled numerical approach of this paper has fewer difficulties in the implementation and computation, compared to gas dynamics based approach which requires complicated analytical manipulations. It can also be applied to wider compressible, inviscid fluid flow analyses often found in underwater explosion events.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.157-158
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• 2007

Effects of post-metallization anneal (PMA) on interface trap characteristics of Si-$SiO_2$ are studied. The conventional PMA method utilizes forming gas anneal, where 10% hydrogen in nitrogen atmosphere is used. A new PMA method utilizes hydrogen rich PECVD- silicon nitride $(SiN_x)$ film as a hydrogen diffusion source and a out-diffusion blocking layer. It can be shown through charge pumping current measurement that the new PMA is indeed effective to decrease Si-$SiO_2$ interface trap density.

• Proceedings of the KIEE Conference
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• 1998.11a
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• pp.88-90
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• 1998

In this paper, the indirect BIEM(boundary integral equation method) is adopted to analyze 3-D eddy currents in cover plate of power transformer. In indirect BIEM, the equivalent magnetic surface charge density and the eqivalent magnanetic surface current density are the unknowns. Using triangular constant elements, the integral equations are discretized into boundary element equations of minimum order. Eddy currents are obtained in terms of euqivalent magnetic surface sources. And the locad overheating can be predicted using the eddy currents distribution in cover plate of power transformer.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

• Explosives and Blasting
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• v.24 no.2
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• pp.1-8
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• 2006

In this study, a charging density has been differently applied to all holes to improve an excavated length per round on excavating a tunnel in quartzite mine and to prevent a dead pressure phenomena and sintering phenomena. A composition initiating system using simultaneously a direct initiating system and a indirect initiating system with 2 detonators in one hole has been introduced to cut holes. As a bottom part which is difficult to make a free face are charged with a higher charging density and a column part are charged with a lower charging density, the composition charging and initiating system which the power of explosives works effectively in the rock mass is developed. As the results, a dead pressure phenomena and a sintering phenomena being often produced in a hard rock or in a long hole could be prevented. Besides, the workability was improved by about 15% and the specific charge was reduced to about 20%, as an excavated length vs. a drilled length per round could be increased over 95%.

• Journal of the Korean Solar Energy Society
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• v.24 no.4
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• pp.11-18
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• 2004

A solar concentrator, named KIERDISH II, was built at KIER in order to investigate the feasibility of high temperature solar energy application system. The constructed concentrator is a dish type solar concentrator with a focal length of 4.68m and a diameter of 7.9m. To successfully operate KIERDISH II, optimal design of the absorber is very important and flux density distribution has to be known. The focal flux density distribution on the receiver was measured. We have observed the shape and size of flux images and evaluated percent power within radius. Flux density distribution is usually measured by a CCD(charge coupled device) camera and a radiometer. In this paper we present a flux mapping method to estimate the characteristic features of the flux density distribution in the focal region of solar concentrator. The minimum radius of receiver is found to be 0.15m and approximately 90% of the incident radiation is intercepted by receiver aperture.