• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.291-295
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• 1996

This paper discusses several design factors of a capacitance displacement sensor with a numerical method and several experiments and describes guide lines of the design of this type sensor. We introduce the charge density method for the analysis of this type sensor, which has feasible accuracy and efficiency. The analysis of this type sensor with the charge density method agrees with displacement sensitivity experiments of a circular plate capacitance sensor with the sensor amp based In the charge transfer principle.

• Journal of information and communication convergence engineering
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• 제9권1호
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• pp.78-82
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• 2011

This paper proposes a new circuit for capacitive sensing based on Dickson's charge pump. The proposed touch sensing circuit includes three stages of NMOS diodes and capacitors for charge transfer. The proposed circuit which has a simplified capacitive touch sensor model has been analyzed and simulated by Spectre using Magna EDMOS technology. Looking from the simulation results, the proposed circuit can effectively be used as a capacitive touch sensing circuit. Moreover, a simple structure can provide maximum flexibility for making a digitally-controlled touch sensor driver with lowpower operations.

• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.87-90
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• 2005

$SiO_2$ via-hole etching with a high aspect ratio is a key process in fabricating ULSI devices; however, accumulated charge during plasma etching can cause etching stop, micro-loading effects, and charge build-up damage. To alleviate this concern, charge-up damage sensor was fabricated for the ultimate goal of real-time monitoring of accumulated charge. As an effort to reach the ultimate goal, fabricated sensor was used for electrical potential measurements of via holes between two poly-Si electrodes and roughly characterized under various plasma conditions using statistical design of experiment (DOE). The successful identification of potential difference under various plasma conditions not only supports the evidence of potential charge-up damage, but also leads the direction of future study.

• Journal of information and communication convergence engineering
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• 제3권4호
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• pp.187-190
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• 2005

High aspect ratio via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via-hole, this sophisticated and important process still hold several problems, such as etching stop and loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 추계종합학술대회
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• pp.303-306
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• 2005

High aspect ration via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via hole, this sophisticated and important process still hold several problems, such as etching stop, loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

• 대한전자공학회논문지SD
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• 제45권5호
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• pp.50-57
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• 2008

본 논문에서는 CMOS image sensor(CIS)에서 사용될 수 있는 고 효율 charge pump를 제안하였다. 제안된 charge pump는 CIS의 동작 특성을 활용하여 switching loss 및 reversion loss를 최소화하여 고 효율 동작을 실현하였다. 즉, CIS 픽셀 동작 구간에 따라 local clock driver, 펌핑 커패시터, 그리고 charge 전달 switch의 크기를 역동적으로 조절함으로써 switching loss 를 최소화하였다. 또한, schmitt trigger를 채용한 tri-state local clock driver를 이용하여 non-overlapping 구간이 충분히 확보된 local clock을 공급할 수 있게 함으로써 reversion loss를 최소화하였다. 0.13-um CMOS 공정을 이용한 시뮬레이션 비교 결과, 제안된 charge pump는 구동 전류가 없는 조건에서 기존 구조에 비해 최대 49.1% 전력 소모를 개선하였으며, 구동 전류가 최대인 조건에서는 19.0% 전력 소모를 개선할 수 있었음을 확인하였다.

• 센서학회지
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• 제12권1호
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• pp.51-56
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• 2003

We describe a charge pump circuit using VCO (voltage controlled oscillator) for storing information into local memories in neural networks. The VCO is used for adjusting the output voltage of the charge pump to the reference voltage and for reducing the fluctuation generated by the clocking scheme. The charge pump circuit is simulated by using Hynix 0.35um CMOS process parameters. The proposed charge pump operates properly regardless to the temperature and the supply voltage variation.

• 센서학회지
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• 제17권2호
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• pp.114-119
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• 2008

Wide dynamic range active pixel sensor(APS) using a charge pump circuit has been designed by using 2-poly 4-metal $0.35{\mu}M$ standard CMOS technology. The structure of the proposed APS is similar to the structure of the conventional 3-Tr APS. The proposed unit pixel consists of one photodiode and three MOSFETs. Using a charge pump circuit, the dynamic range of the proposed APS is increased, compared to the conventional 3-Tr APS.

• 센서학회지
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• 제23권1호
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• pp.24-28
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• 2014

A lock-in amplifier was proposed for capacitive sensor applications. This amplifier was based on a general-purpose microcontroller and had only a charge amplifier as analog circuits. All the other functions of lock-in amplifier except for the charge amplifier were implemented with firmware and the internal resources of the microcontroller. A rectangular signal, generated by the microcontroller, was used in a sensor-driving signal instead of a conventional sinusoidal signal. This makes it possible that the phase comparison circuit in the lockin amplifier is made with analog-to-digital converter, a timer and an interrupt controller. Using the oversampling method and the rectangular driving signal, we can make it easy to implement the peak detection function with software and sample the peak-to-peak signal at charge amplifier output. A charge amplifier was proposed to cancel out the base capacitance existing in capacitive sensors structurally. The experimental results show that the lock-in amplifier operating in the supply voltage of 3.0 V cancels out the base capacitance and has good linearity.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.749-750
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• 2010