Journal of information and communication convergence engineering

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Sensitivity Analysis of Plasma Charge-up Monitoring Sensor

  • Lee Sung Joon (Department of Electronic Engineering at Myongji University) ;
  • Soh Dea-Wha (Department of Electronic Engineering and director of semiconductor technology center at Myongji University) ;
  • Hong Sang Jeen (Department of Electronic Engineering & NBRC at Myongji University)
  • Published : 2005.12.01
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Abstract

High aspect ratio via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via-hole, this sophisticated and important process still hold several problems, such as etching stop and loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

Keywords

References

  1. Ogawa E.T, Lee K.D, Matsuhashi H, Ko K.S, Justison P.R, Ramamurthi A.N, Bierwag A.J, Ho P.S, Blaschke V.A, and Havemann R.H, 'Statistics of electromigration early failures in Cu/Oxide dual-damascene interconnects,' in Proc. Reliability Physics Symposium, 2001, pp. 341-349 https://doi.org/10.1109/RELPHY.2001.922925
  2. S. Samukawa and T. Mukai, 'High-performance of process-induced charging in scaled-down devices and reliability improvement using time-modulated plasma,' J. Vac. Sci. Tech. B, vol. 18, no. 1, 2000, pp.166-171
  3. C. Hedlund and S. Berg, 'Microloading effect in reactive ion etching,' J. Vac. Sci. Tech. A, vol. 12, no. 42, 1994, pp. 1962-1965 https://doi.org/10.1116/1.578990
  4. T. Nozawa and T. Kinoshita, 'The electron charging effects of plasma on notch profile defects', Jpn. J. Appl. Phys., part I. vol. 34, no. 4B, 1995, pp. 2107-2113 https://doi.org/10.1143/JJAP.34.2107
  5. T. Kinoshita, M. Hane, and J. P. McVittie, ''Notching as an example of charging in uniform high density plasmas', J. Vac. Sci. Tech. B, vol. 14, no. 1, 1996, pp. 560 https://doi.org/10.1116/1.588431
  6. K. Hashimoto, ''New phenomena of charge damage in plasma etching: heavy damage only through dense-line antenna', Jpn. J. Appl. Phys., part I, vol. 32, no. 12B, 1993, pp. 6109-6113 https://doi.org/10.1143/JJAP.32.6109
  7. T. Simmura, S. Soda, S. Samukawa, M. Koyanagi, and K. Hane, 'electrical conductivity of sidewall deposited fluorocarbon polymer in $SiO_{2}$ etching processes', J. Vac. Sci. Tech B, vol. 20, no. 6, 2003, pp. 2346-2350
  8. T. Simmura, S. Soda, S. Samukawa, K. Hane, 'Mitigation of Accumulated electric Charge by Deposited Flurocarbon Film during $SiO_2$ Etching', J. Vac. Sci. Tech A. vol. 22, no. 2, 2004, pp. 433-436 https://doi.org/10.1116/1.1649347
  9. C. himmel and G. May, 'Advantages of plasma etch modeling using neural networks over statistical techniques', IEEE Trans. Semiconductor Manufacturing, vol. 6, no. 2, 1993, pp. 103-111 https://doi.org/10.1109/66.216928