References
- Ogawa E.T, Lee K.D, Matsuhashi H, Ko K.S, Justison P.R, Ramamurthi A.N, Bierwag A.J, Ho P.S, Blaschke V.A, and Havemann R.H, 'Statistics of electromigration early failures in Cu/Oxide dual-damascene interconnects,' in Proc. Reliability Physics Symposium, 2001, pp. 341-349 https://doi.org/10.1109/RELPHY.2001.922925
- S. Samukawa and T. Mukai, 'High-performance of process-induced charging in scaled-down devices and reliability improvement using time-modulated plasma,' J. Vac. Sci. Tech. B, vol. 18, no. 1, 2000, pp.166-171
- C. Hedlund and S. Berg, 'Microloading effect in reactive ion etching,' J. Vac. Sci. Tech. A, vol. 12, no. 42, 1994, pp. 1962-1965 https://doi.org/10.1116/1.578990
- T. Nozawa and T. Kinoshita, 'The electron charging effects of plasma on notch profile defects', Jpn. J. Appl. Phys., part I. vol. 34, no. 4B, 1995, pp. 2107-2113 https://doi.org/10.1143/JJAP.34.2107
- T. Kinoshita, M. Hane, and J. P. McVittie, ''Notching as an example of charging in uniform high density plasmas', J. Vac. Sci. Tech. B, vol. 14, no. 1, 1996, pp. 560 https://doi.org/10.1116/1.588431
- K. Hashimoto, ''New phenomena of charge damage in plasma etching: heavy damage only through dense-line antenna', Jpn. J. Appl. Phys., part I, vol. 32, no. 12B, 1993, pp. 6109-6113 https://doi.org/10.1143/JJAP.32.6109
-
T. Simmura, S. Soda, S. Samukawa, M. Koyanagi, and K. Hane, 'electrical conductivity of sidewall deposited fluorocarbon polymer in
$SiO_{2}$ etching processes', J. Vac. Sci. Tech B, vol. 20, no. 6, 2003, pp. 2346-2350 -
T. Simmura, S. Soda, S. Samukawa, K. Hane, 'Mitigation of Accumulated electric Charge by Deposited Flurocarbon Film during
$SiO_2$ Etching', J. Vac. Sci. Tech A. vol. 22, no. 2, 2004, pp. 433-436 https://doi.org/10.1116/1.1649347 - C. himmel and G. May, 'Advantages of plasma etch modeling using neural networks over statistical techniques', IEEE Trans. Semiconductor Manufacturing, vol. 6, no. 2, 1993, pp. 103-111 https://doi.org/10.1109/66.216928