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Sensitivity Analysis of Plasma Charge-up Monitoring Sensor  

Lee Sung Joon (Department of Electronic Engineering at Myongji University)
Soh Dea-Wha (Department of Electronic Engineering and director of semiconductor technology center at Myongji University)
Hong Sang Jeen (Department of Electronic Engineering & NBRC at Myongji University)
Publication Information
Journal of information and communication convergence engineering / v.3, no.4, 2005 , pp. 187-190 More about this Journal
Abstract
High aspect ratio via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via-hole, this sophisticated and important process still hold several problems, such as etching stop and loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.
Keywords
Charge-up monitoring sensor; Neural networks; Plasma; etching;
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