• Macromolecular Research
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• v.17 no.9
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• pp.714-717
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• 2009

Hole transport copolymers consisting of 3,4-ethylenedioxythiophene (EDOT) and N-4-butylphenyl-N,N-diphenylamine (BTPA) were synthesized by oxidative coupling reaction using $FeCl_3$ as an oxidant. These copolymers showed good solubility and their thin films showed sufficient morphological stability. The copolymers showed an absorption maximum around 320 nm. Copolymers had an oxidation peak at approximately $1.03{\sim}1.14V$ versus the Ag/AgCl electrode. The hole mobility increased with increasing portion of the EDOT unit. The hole mobility of the copolymer containing 57% of the EDOT unit showed the highest mobility of $3{\times}10^{-5}cm^2/V{\cdot}s$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.969-971
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• 2007

The black/white electronic ink containing high mobility white nano particles and the organic black pigment particles dispersed in dielectric fluid were prepared. A charge control agent affects the electrophoretic zeta potentials of white particle, which show the maximum value in zeta potential. The electronic ink panel fabricated with the charged white particles and the black particles exhibits more than 15:1 contrast ratio at 10V.

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.272-276
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• 2015

The PbS quantum dot is an emerging photovoltaic material, which may provide high efficiency breakthroughs. The most crucial element for the high efficiency solar cells's development is to understand charge transport characteristics of PbS quantum dot solids, which are also important in planning strategic research. We have investigated charge transport characteristics of PbS quantum dot solids thin films using space charge limited conduction analysis and assessed thickness dependent photovoltaic performances. The extracted carrier drift mobility was $low-10^{-2}cm^2/Vs$ with the estimated diffusion length about 50 nm. These and recently reported values were compared with those from a commercial photovoltaic material, and we present an essential element in further development of PbS quantum dot solids materials.

• Journal of Electrochemical Science and Technology
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• v.12 no.1
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• pp.1-20
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• 2021

In-depth knowledge of electrode processes is crucial for determining the electrochemical performance of lithium-ion batteries (LIBs). In particular, the conduction mechanisms of charged species in the electrodes, such as lithium ions (Li+) and electrons, are directly correlated with the performance of the battery because the overall reaction is dependent on the charge transport behavior in the electrodes. Therefore, it is necessary to understand the different electrochemical processes occurring in electrodes in order to elucidate the charge conduction phenomenon. Thus, it is essential to conduct fundamental studies on electrochemical processes to resolve the technical challenges and issues arising during the ionic and electronic conduction. Furthermore, it is also necessary to understand the transport of charged species as well as the predominant factors affecting their transport in electrodes. Based on such in-depth studies, potential approaches can be introduced to enhance the mobility of charged entities, thereby achieving superior battery performances. A clear understanding of the conduction mechanism inside electrodes can help overcome challenges associated with the rapid movement of charged species and provide a practical guideline for the development of advanced materials suitable for high-performance LIBs.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.473-477
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• 1999

Xerographic properties of double-layer photoconductor doped with 4-butyl-4'-methoxyazobenzene (BMAB) as charge-carrier transport material were investigated. BMAB can undergo reversible trans-cis isomerization by light with appropriate wavelength. In the results of measured surface voltage properties for photoconductor doped with BMAB, TNF: BMAB(4-wt%) sample with trans form showed the lowest dark decay, the lowest residual voltage, and the highest sensitivity among cis form. The trans isomer of BMAB has ordering orientation because the molecule possesses a rodlike shape, while the cis isomer has random orientation due to its bent shape. Therefore the molecular arrangement of trans form enhanced charge-carrier transport mobility.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.187-189
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• 2015

A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×10⁵ and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm²/V·s at a drain voltage of −1 V, respectively.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05d
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• pp.133-138
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• 1996

For the application of hydrogenated amorphous silicon (a-Si:H) p-i-n structural diode as the alpha particle spectroscopy, the induced charge collection was simulated based on a relevant non-uniform charge generation model. The simulation was accomplished for two extreme cases of the incident direction of alpha particle, p-and n-side, respectively. As expected, for the complete charge collection, the hole collection should be severely considered due to its poor mobility and the full depletion bias required. For the comparison of signal corresponding to the detector configuration or structure, although n-i-p configuration shows a wider range of linearity to the energy, p-i-n configuration is more suitable in the viewpoint of linearity and signal value for the considering energy range.

• Journal of Magnetics
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• v.10 no.4
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• pp.149-151
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• 2005

The electric properties of a single crystal bismuth telluride doped with a small concentration of Erbium, $Bi_{z-x}Er_xTe_3$ with x = 0.002, are investigated as a function of temperature. The resistivity was obtained by using the van der Pauw method. The measured electrical resistivity is 78 ${\mu}{\Omega}cm$ at 4.2 K. The charge density of $Bi_{z-x}Er_xTe_3$ is found to be $2{\times}10^{19}/cm^3$ at 4.2 K. It turns out that $Bi_{z-x}Er_xTe_3$ is a p-type semiconductor. It is discussed that the high mobility and less density support that $Bi_{z-x}Er_xTe_3$ is a potential sensor with high energy resolution. Comparison with an established material (i.e. Au:Er alloy) is also discussed.

• Proceedings of the KOR-KST Conference
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• 1998.09a
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• pp.79-90
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• 1998

The current increases in fuel price contribute to reducing level of congestion and air pollution. In this paper, this measure is compared with the congestion toll charge and the 10 'buje'(a $10\%$ demand control measure of registered vehicle i.e. each vehicle can not operate when its plate's last digit matches the last digit of the date). The purpose of our study is to give a priority order to various measures and to propose the win-win solution of Seoul for policy makers. We recommend the congestion toll charge coupled with some metering measures is the win-win solution for Seoul. Also we conclude a priority order such as metering; congestion toll charge; increase in parking fee; increase in fuel price; the 10 'buje' must be acceptable for implementation. Various ITS subsystems needed to support the proposed win-win solution are identified and field operational tests for them are introduced in this paper.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.