• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.15-19
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• 2010

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a $0.35\;{\mu}m$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and $1.5\;{\mu}m$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($i_{SUB}$), drain to source leakage current ($i_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.59-62
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• 2006

Formability is requested to successfully develop of a metal bipolar plate for mass production. From this point of view, wider channel and land width is more helpful to improve formability. But the performance of the fuel cell can be affected by its channel and land shape. So it is very important to select proper channel and land shape not to deteriorate the fuel cell performance. In this work, 3-dimensional, non-isothermal numerical simulation was performed to analyse the effects of channel and land width on the fuel cell performance. 3 types of straight channel were selected for the numerical simulation. The simulation results reveal that wide channel and land width lower fuel cell performance and decrease voltage at a high current density region. Water activity, temperature, oxygen concentration distributions were investigated to find the reasons of performance degradation. The results show that wide channel and land width give an bad effect on fuel cell performance because of low cool ins efficiency and lack of oxygen gas under the land.

• Journal of Semiconductor Engineering
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• 제3권2호
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• pp.161-167
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• 2022

Electrical characteristics of LDMOS power device with LDD(Lightly Doped Drain) structure is studied with variation of the region of channel and LDD. The channel in LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of CMOS inverter. Two-dimensional TCAD MEDICI simulation is used to study hot-carrier effect, on-resistance Ron, breakdown voltage, and transient switching characteristic. The voltage-transfer characteristics and on-off switching properties are studied as a function of the channel length and doping levels. The digital logic levels of the output and input voltages are analyzed from the transfer curves and circuit operation. Study indicates that drain current significantly depends on the channel length rather than the LDD region, while the switching transient time is almost independent of the channel length. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.256-256
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• 2012

Oxide semiconductors such as zinc tin oxide (ZTO) or indium gallium zinc oxide (IGZO) have attracted a lot of research interest owing to their high potential for application as thin film transistors (TFTs) [1,2]. However, the instability of oxide TFTs remains as an obstacle to overcome for practical applications to electronic devices. Several studies have reported that the electrical characteristics of ZnO-based transistors are very sensitive to oxygen, hydrogen, and water [3,4,5]. To improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistor, back channel passivation layer is essential for the long term bias stability. In this study, we investigated the instability of amorphous indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) by the back channel contaminations. The effect of back channel contaminations (humidity or oxygen) on oxide transistor is of importance because it might affect the transistor performance. To remove this environmental condition, we performed vacuum seasoning before the deposition of hybrid passivation layer and acquired improved stability. It was found that vacuum seasoning can remove the back channel contamination if a-IGZO film. Therefore, to achieve highly stable oxide TFTs we suggest that adsorbed chemical gas molecules have to be eliminated from the back-channel prior to forming the passivation layers.

• Design & Manufacturing
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• 제13권2호
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• pp.22-29
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• 2019

This study conducted a research as to condensation heat transfer by using three types of flat micro multi-channel tubes with different processing of micro-fin and number of channels inside the pipes and different sizes of appearances. In addition, identical studies were conducted by using smoothing circular tubes with 5mm external diameter to study heat transfer coefficient. The condensation heat transfer coefficient showed an increase as the vapor quality and mass flux increased. However, each tube shows little differences compared to 400kg/m2s or identical in case the mass flux are 200kg/m2s and 100kg/m2s. The major reason for these factors is increase-decrease of heat transfer area that the flux type of refrigerant is exposed to the coolant's vapor with the effect of channel aspect ratio or micro-fin. In addition, the heat transfer coefficient was unrelated to the heat flux, and shows a rise as the saturation temperature gets lower, an effect that occurs from enhanced density. The physical factor of heat transfer coefficient increased as the channel's aspect ratio decreased. Additionally, the micro pin at the multi-channel type tube is decided as a disadvantageous factor to condensation heat enhancement factor. That is, due to the effect of aspect ratio or micro-fin, the increase-decrease of heat transfer area that the flux type of a refrigerant is exposed to the vapor is an important factor.

• 한국통신학회논문지
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• 제27권2A호
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• pp.99-108
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• 2002

본 논문에서는 불완전한 채널 정보가 시공간 블록 부호의 M-QAM 심볼에러율의 성능에 미치는 영향을 분석한다. 시공간 블록 부호를 복호하기 위해서는 채널 정보가 반드시 필요하므로 불완전한 채널 정보는 시공간 블록 부호의 성능을 저하시키는 원인이 된다. 본 논문에서는 채널 불일치 오차를 발생시키는 주된 원인을 채널 추정의 부정확성으로 인한 오차와 채널의 변화로 인한 오차로 모델링하고 이를 통해 채널 불일치 오차를 분석한다. 그리고 M-QAM 심볼에러율을 채널 불일치 오차 항이 들어간 채널당 평균 신호대 간섭비의 함수로 유도한다. 실험 결과 신호대 잡음비 20dB에서 허용할 수 있는 채널 추정 오차는 $10^{-3}$이고 채널 변화 정도는 f$_{d}$ T$_{B}$=0.001이다.다.

• 동의생리병리학회지
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• 제16권2호
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• pp.389-396
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• 2002

In the present work, we examined the mechanism of vasorelaxant effect of scopoletin, an active constituent of Artemisia capillaris on rat thoracic descending aortic rings. Scopoletin induced a concentration-dependent relaxation in rat thoracic descending aortic rings pre-contracted with phenylephrine (EC/sub 50/ = 238.94±37.4 μM), while it was less effective in rat thoracic descending aortic rings precontracted with high potassium solution (KCI 30 mM). Vasorelaxation by scopoletin was significantly inhibited after endothelial removal, but recovered at high concentration. Pretreatment of rat thoracic descending aortic rings with N/sup G/-nitro-L-arginine (100 μM), a nitric oxide synthase inhibitor, and atropine (1 μM), a muscarinic receptor antagonist, significantly inhibited scopoletin-induced relaxation of rat thoracic descending aortic rings. Neither indomethacin (3 μM), an inhibitor of cydooxygenase, nor propranolol (1 μM), a β -adrenoceptor antagonist, modified the effect of scopoletin. The combination of N/sup G/ -nitro-L-arginine (100 μ M) and miconazole (10 μ M), an inhibitor of cytochrome P 450, did not modify the effect of scopoletin, when compared with pretreatment with N/sup G/-nitro-L-arginine(100 μM) alone. Vasorelaxant effect of scopoletin was inverted by pretreatment with diltiazem (10 μM), a Ca/sup 2+/-channel blocker, at low concentration, while restored at high concentration. Apamin (K/sub ca/-channel blocker, 1 μM), 4-aminopyridine (4-AP, K/sub v/-channel blocker, 1 mM), and tetrodotoxin (TTX, Na/sup +/-channel blocker 1 μM) potentiated the vasorelaxant effect of scopoledn, but glibendamide (K/sub ATP/-channel blocker, 10 μM), tetraetylammonium(TEA, non-selective K-channel blocker, 10 mM) did not affect the relaxation of scopoletin. Free radical scavengers (TEMPO, catalase, mannitol) did not modify vascular tone. These results suggest that nitric oxide, Ca/sup 2+/ -channels play a role in endothelium-dependent relaxations to scopoletin in rat aortas, that apamin, 4-AP, TTX but not glibenclamide, TEA potentiated relaxation to scopoletin mediated by these channels, and that free radicals do not concern to the vasorelaxant effect of scopoletin.

• 대한기계학회논문집
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• 제17권2호
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• pp.438-444
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• 1993

The circuit board of an electronic equipment were simulated with a vertical channel which had thermal blocks protruded from one of the channel walls. A rought front plate was made of a circuit board attached with short wires to simulate the back side of a printed circuit board. Natural convection experiments were carried out to study the effects of channel space and rough front plate and to find the suitable characteristic value after the fourth row. The effect of a rough front plate was negligble. There were negligible effects of the channel space on the first and second heaters. Heat transfer coefficients after the third row decreased as the channel space decreased. Heat transfer coefficients were almost constant for larger than 20 mm channel space. A characteristic length was suggested to non-dimensionalize Nu and Ra numbers in a vertical channel with protruded heaters. A correlation was obtained using the new characteristic lengths.

• 전자공학회논문지A
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• 제32A권8호
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• pp.126-132
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• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

• 디지털융복합연구
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• 제14권1호
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• pp.91-97
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• 2016

최근 디지털 융합이 가속화 되면서 쇼핑에 있어서도 전통적인 매장과 온라인 및 모바일 매장에서의 채널 경계가 모호해지고 있다. 특히 동일한 쇼핑에도 여러 채널을 동시에 이용해 정보 검색 및 구매 행위에 적극 활용하는 옴니채널 쇼핑이 급속히 가속화되고 있다. 이에 따라 마케팅, 경영정보, 컴퓨터 공학 등 다양한 분야에서 옴니채널 쇼핑에 대한 활발한 연구가 진행 중이나 아직까지 소비자의 심리적 기질 차에 초점을 두고 이것이 옴니채널 쇼핑과 어떻게 연관되는 지를 본 연구는 거의 없다. 본 연구는 실험을 통해 소비자가 더 외향적(vs. 내성적) 일수록 동일 제품의 쇼핑에 있어서도 보다 옴니채널 쇼핑방식을 선호함을 검증하였다. 그리고 이러한 현상이 외향성이 높이는 다양성 추구 성향에 의해 매개됨을 보였다. 이 같은 연구결과를 토대로 본 연구는 실질적인 연구 결과의 적용을 제안하였으며, 아울러 소비자의 독특함 추구 성향 및 구조화 욕구와 옴니채널 쇼핑이 연계되어 연구될 수 있는 방안을 제시하였다.