• Journal of information and communication convergence engineering
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• 제8권1호
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1357-1359
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• 2001

0.2${\mu}m$ 이하의 최소 선폭을 가지는 소자를 구현할 때 drain induced barrier lowering (DIBL)이나 hot electron effect와 같은 short channel effect (SCE)가 나타나며 이로 인하여 소자의 신뢰성이 악화되기도 한다. 이를 개선하기 위한 방법 중 하나가 silicon selective epitaxial growth (SEG)를 이용한 elevated source/drain (ESD) 구조이다. 본 연 구에서는 silicon selective epitaxial growth를 이용하여 elevated source/drain 구조를 갖는 MOSFET 소자와 일반적인 MOSFET 구조를 갖는 소자와의 차이를 elevated source/drain의 높이 변화에 따른 전류 전압 특성을 이용하여 비교, 분석하였으며 그 결과 elevated source/drain 구조가 short channel effect를 감소시킴을 확인할 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.92-97
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• 2008

In this Paper, we present a scaling theory for dual material surrounding gate (DMSGTs) MOSFETs, which gives a guidance for the device design and maintaining a precise subthreshold factor for given device parameters. By studying the subthreshold conducting phenomenon of DMSGTs, the effective conductive path effect (ECPE) is employed to acquire the natural length to guide the design. With ECPE, the minimum channel potential is used to monitor the subthreshold behavior. The effect of ECPE on scaling factor significantly improves the subthreshold swing compared to conventional scaling rule. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권2호
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• pp.110-116
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• 2009

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• Journal of information and communication convergence engineering
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• 제7권3호
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• pp.361-365
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• 2009

This paper has been presented the transport characteristics of FinFET using the analytical potential model based on the Poisson's equation in subthreshold and threshold region. The threshold voltage is the most important factor of device design since threshold voltage decides ON/OFF of transistor. We have investigated the variations of threshold voltage and drain induced barrier lowing according to the variation of geometry such as the length, width and thickness of channel. The analytical potential model derived from the three dimensional Poisson's equation has been used since the channel electrostatics under threshold and subthreshold region is governed by the Poisson's equation. The appropriate boundary conditions for source/drain and gates has been also used to solve analytically the three dimensional Poisson's equation. Since the model is validated by comparing with the three dimensional numerical simulation, the subthreshold current is derived from this potential model. The threshold voltage is obtained from calculating the front gate bias when the drain current is $10^{-6}A$.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2011년도 추계학술대회 논문집
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• pp.301-306
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• 2011

In this paper, active noise barriers for attenuation of road noise are proposed. multi-channel audio systems, DAQ part and high performance DSP H/W were designed. Active noise control firmware programs were implemented for multi-channel off-line/on-line estimation methods for secondary path transfer functions and FIR/IIR filter structure are used main noise control algorithms. To evaluate performance of proposed systems, the experiments were performed in an active noise barrier test bed for various noise cases.

• Bulletin of the Korean Chemical Society
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• 제27권12호
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• pp.1997-2001
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• 2006

The photodissociation dynamics of formic acid (HCOOH) at 206 nm have been investigated from rotationally resolved laser induced fluorescence spectra of OH ($^2\Pi$) fragments produced exclusively in the ground state. From the spectra, the rotational energy of the fragments was measured to be $820\;{\pm}\;50\;cm^{-1}$. The translational energy released in the products, which is 87% of the total available energy of the system, was also measured from analyses of the Doppler profiles. Joining these data with quantum chemical molecular orbital calculations, we have concluded that the dissociation should take place along the S1 surface with an exit channel barrier and also that the energy partitioning is determined at the exit channel.

• Bulletin of the Korean Chemical Society
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• 제30권8호
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• pp.1805-1810
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• 2009

The adsorptions of trimethygallium (TMG) and arsine (As$H_3$) on H/Si(100)-2x1 surface were theoretically investigated. In the case of TMG adsorption, methane loss reaction, surface methylation, hydrogen loss reaction and ring closing reaction channels were found. The mechanism of As$H_3$ adsorption on the surface was also identified. Among these, the methane loss reaction depositing –Ga(C$H_3)_2$ was found to be the major channel due to its low barrier height and the large exothermicity. The surface methylation reaction is the second most favorable channel. In contrast, arsine turned out to be less reactive on the surface, implying that Arsine surface reaction would be the rate limiting step in the overall ALD process.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.225-230
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• 1994

In this paper, we have fabricated short channel MOSFETs with these parameters to verify the validity of process parameters extraction by DTC method. The experimental results of fabricated short channel devices according to the optimal process parameters demonstrate good device characteristics such as good drain current-voltage characteristics, low body effects and threshold voltage of$\leq$+-.1.0V, high punch through and breakdown voltage of$\leq$12V, low subthreshold swing(S.S) values of$\leq$105mV/decade.

• 한국실내디자인학회논문집
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• 제25권5호
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• pp.111-120
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• 2016

Unlike the past, brick-and-mortar is no longer on the priority list for the shopping activity. Instead, it is replaced by various non-store shopping alternatives, such as Internet, TV, catalog, mobile, etc. As consumers engage digitally, they made fewer trips to stores. Especially, as mobile shopping made the price comparison possible while shopping in the store, new shopping trend of 'showrooming' came to the fore as the serious issue. In order to cope with the this crisis, many brick-and-mortar retailers utilize omni-channel strategy for their countermeasure. This research paper is to suggest the omni-channel strategy that is applicable for the brick-and-mortar retailers. The results are as follows. First, in order to set up the connected-channel shopping environment, consumers have to be exposed to the environment that can deliver the continuous brand experience under the same price policy, brand and store management, etc, as integrating the various purchasing channels into one. Especially, in-store environment needs to change for the place where consumer experience is stressed for the most as using virtual reality devices with augmented reality technology. Also, the online digital kiosk, and tablet that consumer can order the products through the online channel while shopping in-store Second, the barrier-free in-store environment should be offered in order to increase the consumer convenience. This change will allow consumer communicate with the store environment more effectively. Lastly, brick-and-mortar should extend the physical territory as utilizing the offline's advantage and disadvantage through setting up the digital interactive wall or pop-up store for increasing the opportunity of customer interaction with the store. Moreover, visiting service for the elderly, housewife with the baby, or disabled person will be one of the effective substitute.