• Proceedings of the KOSOMBE Conference
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• v.1995 no.11
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• pp.86-89
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• 1995

A clinically oriented 32 channel Electroencephalogram (EEG) and evoked potential (EP) mapping system has been developed. The EEG and EP signals acquired from 32-channel electrodes are amplified by the pre-amplifier located near patient and are then tither amplified by main amplifier. An automatic artifact rejection scheme is employed using a neural network by which examination time is reduced substantially. Auditary and visual stimuli are used for the evoked potential mapping. A user-friendly graphical interface based on the Microsoft Window 3.1 is developed for the operation of the system. Statistical databases for the poop and individual comparisons are also included to support statistically based diagnosis.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.66-74
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• 2012

In this paper, the impact of segregation layer density ($N_{DSL}$) and length ($L_{DSL}$) on scalability and analog/RF performance of dopant-segregated Schottky barrier (DSSB) SOI MOSFET has been investigated in sub-30 nm regime. It has been found that, although by increasing the $N_{DSL}$ the increased off-state leakage, short-channel effects and the parasitic capacitances limits the scalability, the reduced Schottky barrier width at source-to-channel interface improves the analog/RF figures of merit of this device. Moreover, although by reducing the $L_{DSL}$ the increased voltage drop across the underlap length reduces the drive current, the increased effective channel length improves the scalability of this device. Further, the gain-bandwidth product in a common-source amplifier based on optimized DSSB SOI MOSFET has improved by ~40% over an amplifier based on raised source/drain ultrathin-body SOI MOSFET. Thus, optimizing $N_{DSL}$ and $L_{DSL}$ of DSSB SOI MOSFET makes it a suitable candidate for future nanoscale analog/RF circuits.

• The Journal of the Korea institute of electronic communication sciences
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• v.3 no.4
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• pp.289-294
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• 2008

Affordable traffic capacity of each node in networks is expected to reach in Tb/s range in proportion to the rapid growth of Internet users. To transmit more than Tb/s per fiber pair, WDM should be used as well as existing TDM. To increase the capacity of transmission in WDM networks, there are two ways, increasing channel speed or channel quantity. To increase the channel quantity, there are two ways, narrow spacing or expanding transmission bandwidth. To expand bandwidth, ultra-broadband optical amplifier technology is necessary. In this paper, we introduce EDFA in effect at C/L band, FRA, and some optical amplifiers in effect at S band, and analyze the development trend of various amplification technologies.

• Journal of rehabilitation welfare engineering & assistive technology
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• v.10 no.4
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• pp.279-285
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• 2016

Reliable recording and analysis of peripheral nerve activity is important to recognize the user's intention for controlling a neuro-prosthetic hand. In this paper, we present a peripheral nerve recording system that consisted of an intrafascicular multi-electrode array, an electrode insertion device, and a multi-channel neural amplifier. The 16 channel multi-electrode array was stably implanted into the sciatic nerve of the rat under anesthesia using the electrode insertion device. During passive movements and mechanical stimuli, muscle and cutaneous afferent signals were recorded with the multi-channel neural amplifier. Furthermore, we propose a spike sorting method to isolate individual neuronal unit. The muscle proprioceptive units were classified as muscle spindle afferents or Golgi tendon organ afferents, and the skin exteroceptive units were categorized as slow adapting afferents or fast adapting afferents. Experimental results showed that the proposed method could be applicable to record and analyze peripheral nerve activity in neuro-prosthetic systems.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.8 s.338
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• pp.53-60
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• 2005

Recently, sub-micron CMOS technologies have taken the place of III-V materials in a number of areas in integrated circuit designs, in particular even for the applications of gjgabit optical communication applications due to its low cost, high integration level, low power dissipation, and short turn-around time characteristics. In this paper, a four-channel transimpedance amplifier (TIA) array is realized in a standard 0.35mm CMOS technology Each channel includes an optical PIN photodiode and a TIA incorporating the fully differential regulated cascode (RGC) input configuration to achieve effectively enhanced transconductance(gm) and also exploiting the inductive peaking technique to extend the bandwidth. Post-layout simulations show that each TIA demonstrates the mid-band transimpedance gain of 59.3dBW, the -3dB bandwidth of 2.45GHz for 0.5pF photodiode capacitance, and the average noise current spectral density of 18.4pA/sqrt(Hz). The TIA array dissipates 92mw p in total from a single 3.3V supply The four-channel RGC TIA array is suitable for low-power, high-speed optical interconnect applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.339-345
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• 2016

This paper presents a two-stage power amplifier MMIC using a $0.4{\mu}m$ GaN-HEMT process. The two-stage structure provides high gain and compact circuit size using an integrated inter-stage matching network. The size and loss of the inter-stage matching network can be reduced by including bond wires as part of the matching network. The two-stage power amplifier MMIC was fabricated with a chip size of $2.0{\times}1.9mm^2$ and was mounted on a $4{\times}4$ QFN carrier for evaluation. Using a downlink LTE signal with a PAPR of 6.5 dB and a channel bandwidth of 10 MHz for the 2.6 GHz band, the power amplifier MMIC exhibited a gain of 30 dB, a drain efficiency of 32%, and an ACLR of -31.4 dBc at an average output power of 36 dBm. Using two power amplifier MMICs for the carrier and peaking amplifiers, a Doherty power amplifier was designed and implemented. At a 6 dB back-off output power level of 39 dBm, a gain of 24.7 dB and a drain efficiency of 43.5% were achieved.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.10 s.113
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• pp.959-966
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• 2006

This paper proposes a new concept about dual band predistortion linear power amplifier(PD LPA) using diplexer for digital cellular ($f_o$=880 MHz) and IMT-2000($f_o$=2,140 MHz) base stations. The diplexer is composed of low pass filter having defected ground structure(BGS) microstrip line and high pass filter having high-Q lumped capacitors and distributed elements. The proposed predistorter adopts a reflection type intermodulation signal generator with 3 dB hybrid coupler for good reflection characteristic. for a forward link one carrier CDMA IS-95A 1FA and WCDMA 1FA signal, the proposed dual band PD LPA shows the adjacent channel leakage ratio(ACLR) improvement about 10 dB and 9.36 dB for digital cellular and IMT-2000 band, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.1 s.104
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• pp.45-51
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• 2006

In this paper, a new predistortion linearizer for controlling the amplitude of low frequency intermodulation distortion signals is proposed. The low frequency intermodulation distortion(IMD) components are generated by harmonic generator. A vector modulator, modulate fundamental signal with low frequency IMD signals, generates predistortion IMD signals and controls amplitude and phase of them with modulation factors. As a result, this predistorter is suppressed IMD signals of power amplifier effectively. The predistortion linearizer has been manufactured to operate in cellular base-station transmitting band($869{\sim}894\;MHz$). The experimental results show that IMD3 of power amplifier are improved more than 20 dB for CW two-tone signals. Also, it's improved the adjacent channel power ratio(ACPR) more than 10 dB for IS-95 CDMA IFA signals.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.44 no.2 s.314
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• pp.32-38
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• 2007

This paper represents a Doherty amplifier (DPA) with analog predistorter (PD) to improve the linearity of the DPA while preserving the high efficiency. A third-order PD cancels fifth-order intermodulation (IM5) as well as third-order intermodulation (IM3) components by their same phase difference in the PD and DPA. This is accomplished by independently controlling their phase by using the phase-controlled error generator in the PD. Also, we confirm the phase-control ability of the error generator experimentally with a simple and accurate phase measurement setup. For experimental verification, a third-order PD has been implemented and tested in a 180-W DPA at the wide-band code division multiple access (WCDMA) band of 2.11-2.17 GHz. Two-tone test results show that significant cancellation of IM3 and IM5 components can be obtained. For four-carrier WCDMA applications, significant adjacent channel leakage ratio (ACLR) improvement is achieved over a wide range of output power levels. This technique is cost-effective and convenient due to its simple structure, compact size, and three control parameters.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.1
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• pp.91-99
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• 2018

This paper has proposed a low-noise and high-linear RF receiver supporting TV white space from 470 MHz to 698 MHz), which is implemented in $0.13-{\mu}m$ CMOS technology. It consists of a low-noise amplifier, a RF band-pass filter, a RF amplifier, a passive down-conversion mixer, and a channel-selection low-pass filter. A low-noise amplifier and RF amplifier provide a high voltage gain to improve the sensitivity level. To suppress strong and nearby interferers, two RF filtering schemes have been performed by using a RF BPF and a down-conversion mixer. The proposed LPF has been based on the common-gate topology and adopted a bi-quad cell to achieve -24dB/oct characteristics. In addition, the RF receiver can support the overall TV band by controlling a LO frequency. The simulated results show a voltage gain of 56 dB, a noise figure of less than 2 dB, and an out-of-channel IIP3 of -2.3 dBm. It consumes 37 mA from a 1.5 V supply voltage.