• 한국세라믹학회지
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• 제27권5호
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• pp.698-701
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• 1990

The necessary conditions for the growth of high quality Bi12SiO20 single crystals by the Czochralski method have been determined. The interface of melt and crystal was transformed convex to concave above 7 rpm. For growth <001> and <111> directions, facet morphology exhibited 4-fold and 6-fold symmetry. When the crystal of <001> growth direction was broadened, minor facet {110} was developed outstandingly.

• 대한치과보철학회지
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• 제47권2호
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• pp.191-198
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• 2009

연구목적: 본 연구는 높은 심미성을 나타내지만 낮은 파절 강도로 인하여 구치부에서의 사용이 제한되고 있는 전부도재 고정성 국소의치의 파절강도를 증가시키기 위한 방법으로, 취성 재료인 도재에 인장강도가 높은 금속선을 삽입하고 물리적, 기계적 성질을 알아보고자 하였다. 연구 재료 및 방법: lithium disilicate(ingot No.200 : IPS Empress 2, Ivoclar Vivadent, Lichtenstein)와 0.41 mm 직경의 Ni-Cr 금속선(Alfa Aesar, Johnson Matthey Company, USA)을 사용하여, 금속선의 수와 배열을 달리한 4개의 실험군 시편을 제작하였다. 모든 시편은 폭 4 mm, 두께 2 mm, 길이 15 mm의 직육면체로 제작하였다. 실험군 1, 2, 3은 각각 한 가닥, 두 가닥, 세 가닥의 금속선을 도재 시편의 장축을 따라 배열하였으며, 실험군 4는 세 가닥의 금속선을 도재 시편의 장축에, 다섯 가닥의 금속선을 도재 시편의 횡축에 배열하였다. 대조군에는 금속선을 삽입하지 않았으며, 대조군 및 각각의 실험군의 시편은 각 군당 12개로 하였다. 결과: 만능 시험기(Z020, Zwick, Germany)를 이용하여 파절시점까지 하중을 가한 후, 굴곡계수, 굴곡강도, 파절시점까지의 변형률, 파괴인성을 측정하였다. 파절된 시편의 도재와 금속선의 계면을 횡절단 및 연마하여 주사전자현미경(JSM-6360, JEOL, Japan)으로 100배상에서 관찰하였다. 결과는 다음과 같다. 1. 도재에 금속선을 삽입한 결과, 금속선을 삽입하지 않은 대조군에 비해 통계적 유의성 있는 굴곡계수 및 굴곡강도의 변화는 관찰할 수 없었으나, 변형률의 유의성 있는 증가(P<.001)를 관찰할 수 있었다. 2. 금속선을 삽입한 시편의 파절 양상은 하중점 부위에서 도재만 파절되는 양상을 나타내었다. 3. 금속선을 삽입한 도재의 파절된 시편을 횡절단 및 종절단하여 100 배상에서 주사전자현미경으로 촬영한 결과, 하중 시 도재의 파절 원인이 될 수 있는 도재 내부의 기포는 관찰되지 않았으며, 도재와 금속선 사이의 gap도 관찰되지 않았다. 결론: 금속선 삽입의 결과, 취성 재료인 도재의 통계적으로 유의성 있는 변형률의 증가를 관찰할 수 있었다. 그러나 구치부에서 금속선 강화 도재의 사용을 위해서는 굴곡계수 및 굴곡강도의 향상이 필요하다. 이를 위해서는 추가적 연구가 필요하다.

• 구강회복응용과학지
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• 제24권1호
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• pp.113-127
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• 2008

이 연구의 목적은 지르코니아 도재 표면의 전단 결합 강도에서 $ZirLiner^{(R)}$와 블라스팅 처리의 적용 효과를 평가하기 위한 것이다. 60개의 무색의 지르코니아 판과 30개의 색이 있는 지르코니아 판이 규격화되고 연마, 글래스블라스팅, 알루미나블라스팅, 그리고 zirliner 같은 블라스팅 처리를 적용시키는 것에 따라 10개씩 9개의 그룹으로 나누어졌다. 시편을 고정대에 위치하고 만능시험기로 전단력을 측정하였다. 파절된 견본의 파절 표면은 SEM으로 검사되었다. 각 군별 시편을 통계처리하여 그 결과를 비교하였다.

• Journal of Mechanical Science and Technology
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• 제16권9호
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• pp.1078-1083
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• 2002

Ceramics are significantly used in many industrial applications due to their excellent mechanical and thermal properties such as high temperature strength, low density, high hardness, low thermal expansion, and good corrosion resistive properties, while their disadvantages are brittleness, poor formability and high manufacturing cost. To combine advantages of ceramics with those of metals, they are often used together as one composite component, which necessiates reliable joining methods between metal and ceramic. Direct brazing using an active filler metal has been found to be a reliable and simple technique, producing strong and reliable joints. In this study, the fracture characteristics of Si$_3$N$_4$ ceramic joined to ANSI 304L stainless steel with a Ti-Ag-Cu filler and a Cu (0.25-0.3 mm) interlayer are investigated as a function of strain rate and temperature. In order to evaluate a local strain a couple of strain gages are pasted at the ceramic and metal sides near joint interface. As a result the 4-point bending strength and the deflection of interlayer increased at room temperature with increasing strain rate. However bending strength decreased with temperature while deflection of interlayer was almost same. The fracture shapes were classified into three groups ; cracks grow into the metal-brazing filler line, the ceramic-brazing filler line or the ceramic inside.

• 한국전기전자재료학회논문지
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• 제29권2호
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• pp.101-105
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• 2016

The basic characteristics of glass are highly fragile and brittle consequences the ultimate purpose of glass manufacturing is to make a transparent glass with complex shape. In order to solve this problem, mechanical properties of glass can be increased by crystallization of its amorphous glass. However, glass-ceramics has become opaque through crystallization process due to the distracted interface of glass by precipitated particles. This study has been investigated thermal processing conditions of LAS transparent glass-ceramic by using DTA (differential thermal analysis), in order to control size of precipitated particle and then fabricate transparent glass-ceramic. DTA indicated that crystallization peak area was declined with increased nucleation temperature. Subsequently, we have been established optimum temperature for crystallization depending on the nucleation temperature. The transmission and thermal expansion were measured after crystallization, and the size of precipitated particle was identified in range of 20~100 nm by FE-SEM. In addition, by setting the optimized crystallization condition, with high transmission and low thermal expansion glass was synthesized through this experiment.

• 한국결정성장학회지
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• 제31권6호
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• pp.233-239
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• 2021

본 연구에서는 산화갈륨의 방열 특성 향상을 위해 산화갈륨/다이아몬드 이종 박막 성장을 진행하였다. 먼저, 핫필라멘트 화학기상증착법을 이용하여 다결정 다이아몬드를 증착시킨 후, 미스트 화학기상증착법을 통해 450~600℃ 사이의 온도구간에서 산화갈륨 박막을 성장시켰다. 열처리 전후 비교를 통해 500℃에서 산화갈륨/다이아몬드 계면 분리 현상이 발생함을 확인하였다. 이는 비정질과 결정질이 혼재된 산화갈륨 박막이 성장된 후, 냉각 과정에서 열팽창계수의 차이로 인해 계면이 분리된 것으로 판단하였다. 따라서, 본 연구를 통한 산화갈륨/다이아몬드 계면의 물리적 안정성을 통해 산화갈륨의 열물성 보완및 고전력 반도체로의 활용이 기대된다.

• 한국세라믹학회지
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• 제37권4호
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• pp.381-387
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• 2000

Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.

• 한국세라믹학회지
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• 제51권5호
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• pp.459-465
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• 2014

In this study, Si-SiC composites were fabricated using a Si melt infiltration method using ${\beta}$-SiC/C composite powders synthesized by the carbothermal reduction of $SiO_2-C$ precursors made from a TEOS and a phenol resin. The purity of the synthesized SiC-C composite powders was higher than 99.9993 wt% and the average particle size varied from 4 to $6{\mu}m$ with increasing carbon contents of the $SiO_2-C$ precursors. It was found that the Si-SiC composites fabricated in this study consist of ${\beta}$-SiC and residual Si, without any trace of ${\alpha}$-SiC. The 3-point bending strengths of the fabricated Si-SiC composites were measured and found to be higher than 550 MPa, although the density of the fabricated Si-SiC composite was less than $2.9g/cm^3$. The bending strengths and the densities of the fabricated Si-SiC composites were found to decrease with increasing C/Si mole ratios in the SiC-C composite powders. The specific resistivities of the Si-SiC composites fabricated using the SiC-C composite powders were less than $0.018{\Omega}cm$. With increasing C content in the SiC-C composite powders used for the fabrication of Si-SiC composites, the specific resistivity of the Si-SiC composites was found to slightly increase from 0.0157 to $0.018{\Omega}cm$.

• Applied Microscopy
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• 제25권2호
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• pp.73-79
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• 1995

The oxidation of silicon wafers is an essential step in the fabrication of semiconductor devices. It is known to induce degradation of electrical properties and lattice strain of Si substrate from thermal oxidation process due to charged interface and thermal expansion mismatch from thermally grown SiO, film. In this study, convergent beam electron diffraction technique is employed to directly measure the lattice strains in Si(100) and $4^{\circ}$ - off Si(100) substrates with thermally grown oxide layer at $1200^{\circ}C$ for three hours. The ratios of {773}-{973}/{773}-{953} Higher Order Laue Zone lines were used at [012] zone axis orientation. Lattice parameters of the Si substrate as a function of distance from the interface were determined from the computer simulation of diffraction patterns. Correction value for the accelerating voltage was 0.2kV for the kinematic simulation of the [012]. HOLZ patterns. The change in the lattice strain profile before and after removal of oxide films revealed the magnitudes of intrinsic strain and thermal strain components. It was shown that $4^{\circ}$ -off Si(100) had much lower intrinsic strain as surface steps provide effective sinks for the free Si atoms produced during thermal oxidation. Thermal strain in the Si substrate was in compression very close to the interface and high concentration of Si interstitials appeared to modify the thermal expansion coefficient of Si.

• 한국세라믹학회지
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• 제34권6호
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• pp.652-658
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• 1997

The phase stability in the interface of Sr-doped LaMnO3(LSM)/Gd-doped CeO2(CGO) was examined in this study in order to check the feasibility of using LSM as the cathode material in a low-temperature SOFC(solid oxide fuel cell) using CGO as the electrolyte. For the purpose, CGO powders of Ce0.82Gd0.18O0.91 and two LSM powders having different compositions, La0.9Sr0.1MnO3(LSM10) and La0.5Sr0.5MnO3(LSM50), were synthesized using Pechini method. Then, specimens having the LSM/CGO interface were prepared, heat-treated at 130$0^{\circ}C$ for up to 3 days, and analyzed by XRD and STEM/EDX. Face-centered cubic CGO powders of less than 10 nm size were obtained by calcination of polymeric precursor formed in the process at 45$0^{\circ}C$. Higher calcination temperature of $700^{\circ}C$ was necessary for monoclinic LSM10 and cubic LSM50 powders. LSM powders were coarser than CGO and observed to be in the range of 50~100 nm. No trace of LSM-CGO interaction product was found in the XRD pattern. Also it was known from the concentration profile in the vicinity of the interface that interdiffusion was occurred over only a small penetration depth of ~100 nm order.