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http://dx.doi.org/10.4191/kcers.2014.51.5.459

Mechanical and Electrical Properties of Si-SiC Fabricated Using SiC-C Composite Powders Synthesized by Sol-gel Process  

Youn, Sung Il (Interface Control Research Center, Korea Institute of Science and Technology)
Cho, Gyung Sun (Interface Control Research Center, Korea Institute of Science and Technology)
Youm, Mi Rae (Interface Control Research Center, Korea Institute of Science and Technology)
Lim, Dae Soon (Department of Materials Science and Engineering, Korea University)
Park, Sang Whan (Interface Control Research Center, Korea Institute of Science and Technology)
Publication Information
Abstract
In this study, Si-SiC composites were fabricated using a Si melt infiltration method using ${\beta}$-SiC/C composite powders synthesized by the carbothermal reduction of $SiO_2-C$ precursors made from a TEOS and a phenol resin. The purity of the synthesized SiC-C composite powders was higher than 99.9993 wt% and the average particle size varied from 4 to $6{\mu}m$ with increasing carbon contents of the $SiO_2-C$ precursors. It was found that the Si-SiC composites fabricated in this study consist of ${\beta}$-SiC and residual Si, without any trace of ${\alpha}$-SiC. The 3-point bending strengths of the fabricated Si-SiC composites were measured and found to be higher than 550 MPa, although the density of the fabricated Si-SiC composite was less than $2.9g/cm^3$. The bending strengths and the densities of the fabricated Si-SiC composites were found to decrease with increasing C/Si mole ratios in the SiC-C composite powders. The specific resistivities of the Si-SiC composites fabricated using the SiC-C composite powders were less than $0.018{\Omega}cm$. With increasing C content in the SiC-C composite powders used for the fabrication of Si-SiC composites, the specific resistivity of the Si-SiC composites was found to slightly increase from 0.0157 to $0.018{\Omega}cm$.
Keywords
Si-SiC composite; RBSC; Silicon carbide; Bending strength; Specific resistivity;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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