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http://dx.doi.org/10.6111/JKCGCT.2021.31.6.233

Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates  

Seo, Ji-Yeon (Korea Institute of Ceramic Engineering and Technology, Energy and Environmental Division)
Kim, Tae-Gyu (School of Mechatronics Engineering, Pusan National University)
Shin, Yun-Ji (Korea Institute of Ceramic Engineering and Technology, Energy and Environmental Division)
Jeong, Seong-Min (Korea Institute of Ceramic Engineering and Technology, Energy and Environmental Division)
Bae, Si-Young (Korea Institute of Ceramic Engineering and Technology, Energy and Environmental Division)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.31, no.6, 2021 , pp. 233-239 More about this Journal
Abstract
In this study, Ga2O3/diamond layers were grown on Si substrates to improve the thermal characteristics of Ga2O3 materials. Firstly, diamond thin film was grown on Si substrates by hot-filament chemical vapor deposition. Afterward, Ga2O3 layer was grown in the growth temperature range of from 450~600℃ by mist chemical vapor deposition. We found that layer separation happens at the Ga2O3/diamond interface at the growth temperature of 500℃. This is attributed to the different thermal expansion coefficient of the mixture of amorphous and crystalline structures during cooling process. Therefore, this study might contribute to the heat-sink-layer bonded power semiconductor applications by stabilizing the thermal properties at Ga2O3/diamond interface.
Keywords
$Ga_2O_3$; Diamond; Annealing; Phase transition; Hetero structure;
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1 L. Kong, J. Ma, C. Luan, W. Mi and Y. Lv, "Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substrates", Thin Solid Films 520 (2012) 4270.   DOI
2 J.Y. Tsao, S. Chowdhury, M.A. Hollis, D. Jena, N.M. Johnson, K.A. Jones, R.J. Kaplar, S. Rajan, C.G. Van de Walle, E. Bellotti, C.L. Chua, R. Collazo, M.E. Coltrin, J.A. Cooper, K.R. Evans, S. Graham, T.A. Grotjohn, E.R. Heller, M. Higashiwaki, M.S. Islam, P.W. Juodawlkis, M.A. Khan, A.D. Koehler, J.H. Leach, U.K. Mishra, R.J. Nemanich, R.C.N. Pilawa-Podgurski, J.B. Shealy, Z. Sitar, M.J. Tadjer, A.F. Witulski, M. Wraback and J.A. Simmons, "Ultrawide-bandgap semiconductors: Research opportunities and challenges", Adv. Electron. Mater. 4 (2018) 1600501.   DOI
3 R. Roy, V.G. Hill and E.F. Osborn, "Polymorphism of Ga2O3 and the system Ga2O3-H2O", J. Am. Chem. Soc. 74 (1952) 719.   DOI
4 D. Shinohara and S. Fujita, "Heteroepitaxy of corundum-structured α-Ga2O3 thin films on α-Al2O3 substrates by ultrasonic mist chemical vapor deposition", Jpn. J. Appl. Phys. 47 (2008) 7311.   DOI
5 J.J. Gracio, Q.H. Fan and J.C. Madaleno, "Diamond growth by chemical vapour deposition", J. Phys. D: Appl. Phys. 43 (2010) 374017.   DOI
6 H. Nishinaka, H. Komai, D. Tahara, Y. Arata and M. Yoshimoto, "Microstructures and rotational domains in orthorhombic ε-Ga2O3 thin films", Jpn. J. Appl. Phys. 57 (2018) 115601.   DOI
7 J. Noh, M. Si, H. Zhou, M.J. Tadjer and P.D. Ye, "The impact of substrates on the performance of top-gate β-Ga2O3 field-effect transistors: record high drain current of 980 mA/mm on diamond", 76th Device Research Conference (DRC) (2018) 1.
8 Y.J. Heo, H.T. Kim, K.J. Kim, S. Nahm, Y.J. Yoon and J. Kim, "Enhanced heat transfer by room temperature deposition of AlN film on aluminum for a light emitting diode package", Appl. Therm. Eng. 50 (2013) 799.   DOI
9 M. Handwerg, R. Mitdank, Z. Galazka and S.F. Fischer, "Temperature-dependent thermal conductivity in Mgdoped and undoped β-Ga2O3 bulk-crystals", Semicond. Sci. Technol. 30 (2015) 024006.   DOI
10 Z. Cheng, F. Mu, T. You, W. Xu, J. Shi, M.E. Liao, Y. Wang, K. Huynh, T. Suga, M.S. Goorsky, X. Ou and S. Graham, "Thermal transport across ion-cut monocrystalline β-Ga2O3 thin films and bonded β-Ga2O3-SiC interfaces", ACS Appl. Mater. Interfaces 12 (2020) 44943.   DOI
11 K. Jagannadham, "Multilayer diamond heat spreaders for electronic power devices", Solid State Electron. 42 (1998) 2199.   DOI
12 A.K. Mallik, "Some aspects of diamonds in scientific research and high technology", E. Lipatov (IntechOpen, London, 2020) p. 677.
13 P.G. Evans, Y. Chen, J.A. Tilka, S.E. Babcock and T.F. Kuech, "Crystallization of amorphous complex oxides: new geometries and new compositions via solid phase epitaxy", Curr. Opin. Solid State Mater. Sci. 22 (2018) 229.   DOI
14 Y. Oshima, E.G. Villora, Y. Matsushita, S. Yamamoto and K. Shimamura, "Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy", J. Appl. Phys. 118 (2015) 085301.   DOI
15 S.J. Pearton, J. Yang, P.H. Cary, F. Ren, J. Kim, M.J. Tadjer and M.A. Mastro, "A review of Ga2O3 materials, processing, and devices", Appl. Phys. Rev. 5 (2018) 011301.   DOI
16 F. Orlandi, F. Mezzadri, G. Calestani, F. Boschi and R. Fornari, "Thermal expansion coefficients of β-Ga2O3 single crystals", Appl. Phys. Express 8 (2015) 111101.   DOI
17 L. Yin, L. Yang, W. Yang, Y. Guo, K. Ma, S. Li and J. Zhang, "Thermal design and analysis of multi-chip LED module with ceramic substrate", Solid State Electron. 54 (2010) 1520.   DOI
18 Z. Cheng, L. Yates, J. Shi, M.J. Tadjer, K.D. Hobart and S. Graham, "Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces", APL Mater. 7 (2019) 031118.   DOI
19 M.N.R. Ashfold, P.W. May, C.A. Rego and N.M. Everitt, "Thin film diamond by chemical vapour deposition methods", Chem. Soc. Rev. 23 (1994) 21.   DOI
20 Kumar, S. Sampath, E.J. Rubio, M. Noor-A-Alam, G. Martinez, S. Manandhar, V. Shutthanandan, S. Thevuthasan and C.V. Ramana "Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films", J. Phys. Chem. C. 117 (2013) 4194.   DOI