Czochralski Growth of $Bi_{12}SiO_{20}$ single Crystals

Czochralski법에 의한 $Bi_{12}SiO_{20}$ 단결정 성장

  • 정광철 (한양대학교 무기재료공학과) ;
  • 오근호 (한양대학교 무기재료공학과)
  • Published : 1990.05.01

Abstract

The necessary conditions for the growth of high quality Bi12SiO20 single crystals by the Czochralski method have been determined. The interface of melt and crystal was transformed convex to concave above 7 rpm. For growth <001> and <111> directions, facet morphology exhibited 4-fold and 6-fold symmetry. When the crystal of <001> growth direction was broadened, minor facet {110} was developed outstandingly.

Keywords

References

  1. J. Crystal Growth v.24 no.25 The Czochralski Growth of $Bi_{12}SiO_{20}$ Crystals J.C. Brice;T.M. Bruton
  2. J. Appl. Phys. v.59 no.8 Propagation of Light in an Optically Active Electro-Optic Crystal of $Bi_{12}SiO_{20}$ Measurement of the Electro-Optic Coefficient M. Henry(et al.)
  3. J. Chem. Phys. v.71 no.2 Crystal Structure and Absolute Piezoelectric $d_{14}$ Coefficient in Laevorotatory $Bi_{12}SiO_{20}$ S.C. Abrahams(et al.)
  4. Opt. Eng. v.17 no.4 The PROM-Theory and Applications for the Pockels Readout Optical Modulator Bruce A. Horwitz(et al.)
  5. IEE Proc. v.133 Development of Liquid Crystal Light Valves Using $Bi_{12}SiO_{20}$ as the Photoconductor S.S. Makh(et al.)
  6. Appl. Phys. Lett v.29 J.P. Fluignard;F. Micheron
  7. J. Crystal Growth v.42 no.431 The Czochralski Growth of Optical Quality Bismuth silicon Oxide$(Bi_{12}SiO_{20})$ A.R. Tanguay(et al.)
  8. J.R. NBS-A, Physics and Chemistry v.68 A no.2 Polymorphism of Bismuth Sesquioxide. II. Effect of Oxide Additions on the Polymorphism of $Bi_{12}SiO_{20}$ Ernest M. Levin(et al.)
  9. J. Crystal Growth v.49 Fluid-flow Effect on Gas-Bubble Entrapment in Czochralski-Grown Oxide Crystals Shintaro Miyazawa