• 전력전자학회:학술대회논문집
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• 전력전자학회 2004년도 전력전자학술대회 논문집(2)
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• pp.625-629
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• 2004

This paper presents a systematical approach to study carrier based PWM techniques (CPWM) in diode-clamped and cascade multilevel inverters by using a proposed named multi-modulating pattern method. This method is based on the vector correlation between CPWM and the space vector PWM (SVPWM) and applicable to both multilevel inverter topologies. A CPWM technique can be described in a general mathematical equation, and obtain the same outputs similarly as of the corresponding SVPWM. Control of the fundamental voltage, vector redundancies and phase redundancies in multilevel inverter can be formulated separately in the CPWM equation. The deduced CPWM can obtain the full vector redundancy control, and fully utilize phase redundancy in a cascade inverter In this continued part, it will be deduced correlation between CPWM equations in multi-carrier system and single carrier system, present the mathematical model of voltage source inverter related to the common mode voltage and propose a general algorithm for multi-modulating modulator. The obtained theory will be demonstrated by simulation results.

• 전자공학회논문지A
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• 제31A권1호
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• pp.93-102
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• 1994

This paper, presents SECRET(SEC REliability Tool), which predicts reliability problems related to the hot-carrier and electromigration effects on the submicron MOSFETs and interconnections. To simulate DC and AC lifetime for hot-carrier damaged devices, we have developed an accurate substrate current model with the geometric sensitivity, which has been verified over the wide ranges of transistor geometries. A guideline can be provided to design hot-carrier resistant circuits by the analysis of HOREL(HOT-carrier RFsistant Logic) effect, and circuit degradation with respect to physical parameter degradation such as the threshold voltage and the mobility can also be expected. In SECRET, DC and AC MTTF values of metal lines are calculated based on lossy transmission line analysis, and parasitic resistances, inductances and capacitances of metal lines are accurately considered when they operate in the condition of high speed. Also, circuit-level reliability simulation can be applied to the determination of metal line width and-that of optimal capacitor size in substrate bias generation circuit. Experimental results obtained from the several real circuits show that SECERT is very useful to estimate and analyze reliability problems.

• Journal of Power Electronics
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• 제16권2호
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• pp.778-785
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• 2016

An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.

• 한국수소및신에너지학회논문집
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• 제29권1호
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• pp.90-96
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• 2018

Reaction characteristics and kinetics of a oxygen carrier (OCN717-R1SU) for chemical looping combustion (CLC) have been investigated using TGA by changing gas concentration (10-30 vol.% $CH_4$) and reaction temperature ($825-900^{\circ}C$). Reaction rate of OCN717-R1SU increased as temperature increased and it was found that reaction is delayed at the initial reaction regime. Johnson-Mehl-Avrami (JMA) model was adopted to explain the reaction phenomenon. The activation energy (E) determined by JMA model in reduction reaction of OCN717-R1SU is $151.7{\pm}2.03kJ/mol$ and pre-exponential factor and JMA exponent were also obtained. The parameters calculated in this study will be applied in design of the reactor and operation conditions for CLC process.

• 한국기계가공학회지
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• 제15권5호
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• pp.66-72
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• 2016

Gearboxes are mechanical components that transmit power by adjusting input and output speed and torque. Their design requirements include small size, light weight, and long lifespan. We have investigated the effects of carrier pinhole position error on the load sharing and load distribution characteristics of a planetary gear set with four planet gears. The simulation model for a simple planetary gear set was developed and verified by comparing analytical results with a putative model. Then, we derived the load sharing and load distribution characteristics under various pinhole position error conditions using the prototypical simulation model. The results showed that the mesh load factor and face load factor increased with the pinhole position error, which then influenced the safety factor for tooth bending strength and surface durability.

• 한국막학회:학술대회논문집
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• 한국막학회 1999년도 The 7th Summer Workshop of the Membrane Society of Korea
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• pp.15-18
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• 1999

A simple mathematical model for facilitated mass transport through a fixed site carrier membrane was derived by assuming an instantaneous, microscopic concentration (activity) fluctuation. The current model demonstrates that the facilitation factor depends on the extent of concentration fluctuation, the time scale ratios of diffusion to chemical reaction and the ratio of the carrier concentration to the solute solubility in matrix. The model was examined against the experimental data on oxygen transport in membranes containing metallo-porphyrin carriers, and the agreement was exceptional (within 10% error). The basic concept of this approach was applied to separate olefin from olefin/paraffin mixtures. A proprietaty carrier, developed here, resulted that the selectivity of propylene over propane was more than 120 and the propylene permeance exceed 40 gpu.

• 한국통신학회논문지
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• 제17권11호
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• pp.1290-1298
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• 1992

본 논문은 fitting 파라미터를 배제하고 2차원적 Poisson 방정식을 도출해서 short-channel MOSFET의 model 식을 완전히 해석적으로 성립시켰다. 이로 인해 포화영역, 문턱전압, 강반전에 대한 것이 동시에 표현되는 정확한 드레인 전류가 유도되었다. 더욱이 이 model은 short-channel과 body효과, DIBL효과, 그리고 carrier운동에 대한 것도 설명할 수 있으며 온도와 $n^+$접합, 산화층에 관련되는 문턱전압도 표현할 수 있었다.

• 전자공학회논문지A
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• 제30A권9호
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• pp.30-37
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• 1993

In this paper, we present a simple and general lifetime prediction model for PMOSFET by using the correlation between transconductance degradation and gate current influence to solve a problem that that I$_{b}$ is dependent on drain structure. The suggested model is applied to a different channel, drain structured PMOSFET. For all PMOSFETs, dg$_{m}$/g$_{m}$ of PMOSFET appears with one straight line about Q$_{g}$, therefore, this model using I$_{g}$ is consistent with experiment result independently of channel, drain structure. It is, therefore, proposed that a model using I$_{g}$ has a general applicability for PMOSFET's.

• 대한조선학회지
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• 제19권4호
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• pp.61-70
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• 1982

The hydrodynamic effects on resistance and propulsive performance were studied by using the data from model test and full scale speed trials. A series of model tests on 3 geosims for a 60,000 DWT Bulk Carrier was conducted at KIMM's Ship Experimental Towing Tank and the results analyzed by 1978 ITTC Performance Prediction Method show the correlation between 3 geosim models. Also powering data of full scale speed trials were analyzed by the newly developed computer program and the correlation analysis between ship and model was studied.

• 한국항해항만학회지
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• 제34권3호
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• pp.181-187
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• 2010

수중무선통신 시스템의 성능은 수중채널의 특성에 영향을 받으며, 특히 잔향 및 다중경로(Multi-path)로 인한 지연확산은 데이터 전송 시 인접심벌간의 간섭(Inter Symbol Interference : ISI)를 발생시켜 통신의 성능을 저하시킨다. 본 논문에서는 잔향 및 다중경로로 인한 인접 심벌간의 간섭에 강한 성능을 나타내는 OFDM(Orthogonal Frequency Division Multiplexing) 기법을 이용하여 수중에서 고속 데이터 전송의 적용성을 검토하였다. 실제 수중 채널을 모의하는 모델을 사용하여 수중에서 통신 성능을 확인하였다. 그 결과 1000m의 거리에서 단일 반송파의 경우 BER이 $2{\times}10^{-1}$ 이였으며, 다중 반송파의 경우 BER이 $8{\times}10^{-2}$이었다.