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http://dx.doi.org/10.6113/JPE.2016.16.2.778

An Excess Carrier Lifetime Extraction Method for Physics-based IGBT Models  

Fu, Guicui (School of Reliability and System Engineering, Beihang University)
Xue, Peng (School of Reliability and System Engineering, Beihang University)
Publication Information
Journal of Power Electronics / v.16, no.2, 2016 , pp. 778-785 More about this Journal
Abstract
An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.
Keywords
Excess carrier lifetime; IGBT; Parameter extraction; 2D Sentaurus simulation;
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