• Proceedings of the KIPE Conference
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• 2004.07b
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• pp.625-629
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• 2004

This paper presents a systematical approach to study carrier based PWM techniques (CPWM) in diode-clamped and cascade multilevel inverters by using a proposed named multi-modulating pattern method. This method is based on the vector correlation between CPWM and the space vector PWM (SVPWM) and applicable to both multilevel inverter topologies. A CPWM technique can be described in a general mathematical equation, and obtain the same outputs similarly as of the corresponding SVPWM. Control of the fundamental voltage, vector redundancies and phase redundancies in multilevel inverter can be formulated separately in the CPWM equation. The deduced CPWM can obtain the full vector redundancy control, and fully utilize phase redundancy in a cascade inverter In this continued part, it will be deduced correlation between CPWM equations in multi-carrier system and single carrier system, present the mathematical model of voltage source inverter related to the common mode voltage and propose a general algorithm for multi-modulating modulator. The obtained theory will be demonstrated by simulation results.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.93-102
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• 1994

This paper, presents SECRET(SEC REliability Tool), which predicts reliability problems related to the hot-carrier and electromigration effects on the submicron MOSFETs and interconnections. To simulate DC and AC lifetime for hot-carrier damaged devices, we have developed an accurate substrate current model with the geometric sensitivity, which has been verified over the wide ranges of transistor geometries. A guideline can be provided to design hot-carrier resistant circuits by the analysis of HOREL(HOT-carrier RFsistant Logic) effect, and circuit degradation with respect to physical parameter degradation such as the threshold voltage and the mobility can also be expected. In SECRET, DC and AC MTTF values of metal lines are calculated based on lossy transmission line analysis, and parasitic resistances, inductances and capacitances of metal lines are accurately considered when they operate in the condition of high speed. Also, circuit-level reliability simulation can be applied to the determination of metal line width and-that of optimal capacitor size in substrate bias generation circuit. Experimental results obtained from the several real circuits show that SECERT is very useful to estimate and analyze reliability problems.

• Journal of Power Electronics
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• v.16 no.2
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• pp.778-785
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• 2016

An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.

• Transactions of the Korean hydrogen and new energy society
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• v.29 no.1
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• pp.90-96
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• 2018

Reaction characteristics and kinetics of a oxygen carrier (OCN717-R1SU) for chemical looping combustion (CLC) have been investigated using TGA by changing gas concentration (10-30 vol.% $CH_4$) and reaction temperature ($825-900^{\circ}C$). Reaction rate of OCN717-R1SU increased as temperature increased and it was found that reaction is delayed at the initial reaction regime. Johnson-Mehl-Avrami (JMA) model was adopted to explain the reaction phenomenon. The activation energy (E) determined by JMA model in reduction reaction of OCN717-R1SU is $151.7{\pm}2.03kJ/mol$ and pre-exponential factor and JMA exponent were also obtained. The parameters calculated in this study will be applied in design of the reactor and operation conditions for CLC process.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.5
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• pp.66-72
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• 2016

Gearboxes are mechanical components that transmit power by adjusting input and output speed and torque. Their design requirements include small size, light weight, and long lifespan. We have investigated the effects of carrier pinhole position error on the load sharing and load distribution characteristics of a planetary gear set with four planet gears. The simulation model for a simple planetary gear set was developed and verified by comparing analytical results with a putative model. Then, we derived the load sharing and load distribution characteristics under various pinhole position error conditions using the prototypical simulation model. The results showed that the mesh load factor and face load factor increased with the pinhole position error, which then influenced the safety factor for tooth bending strength and surface durability.

• Proceedings of the Membrane Society of Korea Conference
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• 1999.07a
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• pp.15-18
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• 1999

A simple mathematical model for facilitated mass transport through a fixed site carrier membrane was derived by assuming an instantaneous, microscopic concentration (activity) fluctuation. The current model demonstrates that the facilitation factor depends on the extent of concentration fluctuation, the time scale ratios of diffusion to chemical reaction and the ratio of the carrier concentration to the solute solubility in matrix. The model was examined against the experimental data on oxygen transport in membranes containing metallo-porphyrin carriers, and the agreement was exceptional (within 10% error). The basic concept of this approach was applied to separate olefin from olefin/paraffin mixtures. A proprietaty carrier, developed here, resulted that the selectivity of propylene over propane was more than 120 and the propylene permeance exceed 40 gpu.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.11
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• pp.1290-1298
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• 1992

In this paper, the Poisson's equation is solved two-dimensionally without employing any fitting parameters, and the model formulation of a short-channel MOSFET is accomplished fully analytically. It automatically derives a very accurate drain current expression that can be used simultaneously for strong inversion, subthreshold, and saturation regions. Furthermore, this model gives a unified explanation for the short-channel effect, the body effect, the DIBL effect, and even the variation of the effective carrier mobility. The obtained expression of the threshold voltage also includes the dependence on the oxide thickness, the n+ junction depth, and temperature.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.9
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• pp.30-37
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• 1993

In this paper, we present a simple and general lifetime prediction model for PMOSFET by using the correlation between transconductance degradation and gate current influence to solve a problem that that I$_{b}$ is dependent on drain structure. The suggested model is applied to a different channel, drain structured PMOSFET. For all PMOSFETs, dg$_{m}$/g$_{m}$ of PMOSFET appears with one straight line about Q$_{g}$, therefore, this model using I$_{g}$ is consistent with experiment result independently of channel, drain structure. It is, therefore, proposed that a model using I$_{g}$ has a general applicability for PMOSFET's.

• Bulletin of the Society of Naval Architects of Korea
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• v.19 no.4
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• pp.61-70
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• 1982

The hydrodynamic effects on resistance and propulsive performance were studied by using the data from model test and full scale speed trials. A series of model tests on 3 geosims for a 60,000 DWT Bulk Carrier was conducted at KIMM's Ship Experimental Towing Tank and the results analyzed by 1978 ITTC Performance Prediction Method show the correlation between 3 geosim models. Also powering data of full scale speed trials were analyzed by the newly developed computer program and the correlation analysis between ship and model was studied.

• Journal of Navigation and Port Research
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• v.34 no.3
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• pp.181-187
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• 2010

The performance of underwater wireless communication system is influenced on channel characteristic. Especially, a delay spread cause by reverberation and multi-path happen the ISI (Inter Symbol Interference) and reduces the communication performance. In this paper, we study the application of high speed data transmission in underwater to use the OFDM (Orthogonal Frequency Division Multiplexing) technique for robust the reverberation and multi-path. we confirm the performance of communication in underwater to use the model for actually underwater channel simulation model. As a result, we acquired the BER of modulation techniques. The BER of single carrier is $2{\times}10^{-1}$ and BER of multi carrier is $8{\times}10^{-2}$ in 1000m.