• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.4
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• pp.67-72
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• 2016

Planetary gear sets are widely used in power transmission components, which have high efficiency and good durability. Their most important design parameter is the load-sharing characteristics among several planetary gears. In this study, the load sharing of planetary gears was analyzed according to the carrier pinhole position error of planetary gear sets. The loads acting on planetary gears varied with the pinhole position error of the carrier, and the load sharing of planetary gears improved as the input load increased. In addition, the load of the planetary gear with a carrier pinhole position error was relatively higher than that of other planetary gears without carrier pinhole position errors. This trend appeared more clearly in the non-floating-type carrier than the floating-type carrier.

• Journal of Information Display
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• v.13 no.3
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• pp.113-118
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• 2012

Metal oxide semiconductors were considered promising materials as backplanes of future displays. Moreover, the adoption of carrier-suppressing metal into indium-zinc oxide (IZO) has become one of the most important themes in the metal oxide research field. In this paper, efforts to realize and optimize IZO with diverse types of carrier suppressors are summarized. Properties such as the band gap of metal in the oxidized form and its electronegativity were examined to confirm their relationship with the metal's carrier-suppressing ability. It was concluded that those two properties could be used as indicators of the carrier-suppressing ability of a material. As predicted by the properties, the alkali earth metals and early transition metals used in the research effectively suppressed the carrier and optimized the electrical properties of the metal oxide semiconductors. With the carrier-suppressing metals, IZO-based thin-film transistors with high (above $1cm^2/V{\cdot}s$) mobility, a lower than 0.6V/dec sub-threshold gate swing, and an over $3{\times}10^6$ on-to-off current ratio could be achieved.

• Journal of Korean Society on Water Environment
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• v.31 no.2
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• pp.209-215
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• 2015

The purpose of this study is to evaluate the characteristic of the iron oxide carrier for removing arsenic contained in the groundwater. 4 types of iron oxide carrier used in the study is iron oxide coated sand carrier (IOCSC), iron oxide coated zeolite carrier (IOCZC), iron oxide plasticity carrier (IOPC) and platinum iron oxide plasticity carrier (PIOPC). The results of this study, IOPC is showed high arsenic adsorption strength and the maximum amount of adsorption than the IOCC. Based on the results of the arsenic adsorption characteristic, by using IOCC was conducted to column test. As a result, PIOPC is showed a high arsenic adsorption amount than IOPC, it was found that the time required to reach the breakthrough point is also extended. Therefore it is determined that stably compliance with water quality standards enhanced drinking water when using the PIOPC.

• Special Issue of the Society of Naval Architects of Korea
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• 2015.09a
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• pp.85-92
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• 2015

In general, when ships are designed, structural strength and fatigue strength must be verified based on the relative rules respectively. In case of Slurry Iron Sand Carrier designed to carry Iron-Sand saturated at water content, there is no special consideration of fatigue strength analysis. However, this vessel is similar to Ore Carrier in consideration of the overall characteristics of loaded cargo and the shape of cargo hold. Therefore we verified fatigue strength based on fatigue analysis procedure of ore carrier in DNV Rules and carried out the study for improving of fatigue strength of Slurry Iron Sand Carrier.

• Applied Chemistry for Engineering
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• v.33 no.6
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• pp.666-674
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• 2022

The removal efficiencies of nutrients (N and P) and heavy metals (Cu and Ni) by Rhodobacter blasticus and R. blasticus attached to polysulfone carriers, alginate carriers, PVA carriers, and PVA + zeolite carriers in synthetic wastewater were compared. In the comparison of the nutrient removal efficiency based on varying concentrations (100, 200, 500, and 1000 mg/L), R. blasticus + polysulfone carrier treatment showed removal efficiencies of 98.9~99.84% for N and 96.92~99.21% for P. The R. blasticus + alginate carrier treatment showed removal efficiencies of 88.04~97.1% for N and 90.33~97.13% for P. The R. blasticus + PVA carrier treatment showed removal efficiencies of 18.53~44.25% for N and 14.93~43.63% for P. The R. blasticus + PVA + zeolite carrier treatment showed removal efficiencies of 26.65~64.33% for N and 23.44~64.05% for P. In addition, at the minimum inhibitory concentration of heavy metals, R. blasticus (dead cells) + polysulfone carrier treatment showed removal efficiencies of 7.77% for Cu and 12.19% for Ni. Rhodobacter blasticus (dead cells) + alginate carrier treatment showed removal efficiencies of 25.83% for Cu and 31.12% for Ni.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.391-391
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• 2016

The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

• Polymer(Korea)
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• v.25 no.5
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• pp.719-727
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• 2001

Recently it was found that the charge carrier transport properties are significantly enhanced due to effective intermolecular $\pi$-orbital overlapping and low disorder of hopping sites caused by self-organization of liquid crystal molecules. In this study, the xerographic properties of a double-layer photoconductor doped with nematic liquid crystal, 4-pentyl-4'-cyanoterphenyl (5CT), as a charge-carrier transport material to enhance the charge-tarrier mobility were investigated. From the results of measured surface voltage properties for the photoconductor doped with various concentrations of liquid crystal, 5CT, the initial voltage was found to increase with the concentration of 5CT and the dark decay decreased with the concentration of 5CT. The highest sensitivity was obtained at a specific concentration, 40wt% 5CT. The fluorescence behavior of the carrier transport layer (CTL) was also investigated. It was found that the charge-carrier transport properties of the organic photoconductor depend on the charge-carrier transport properties of the complex. The TNF : 5CT (40 wt%) and OXD : 5CT (40 wt%)samples showed the highest sensitivity because the greatest charge transport complex was termed between the charge-carrier transport materials in these samples.

• Journal of Fashion Business
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• v.21 no.4
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• pp.105-115
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• 2017

Continuous lifting and carrying of babies constitutes a serious physical burden, leading to issues such as muscle fatigue and pain in child-care workers. However, there is a lack of research on the pressure and subjective comfort of baby carriers that are commercially available in the market. Therefore, this study was intended to determine the most comfortable and least burdensome type of baby carrier. This was done by analyzing muscle activity and pressure when subjects carried babies using three types of baby carriers. The types of baby carriers evaluated included a 'baby carrier of thin shoulder straps without back support band (X-type)', a 'baby carrier with a back-support band and without a hip sheet (H-type)', and a 'baby carrier with back support band and hip support (H-hip type). The subjective comfort of subjects wearing each type of baby carrier was investigated and compared to the objectively measured data. As a result, the X-type baby carrier showed the heaviest pressure on the shoulders and the subjective comfort was found to not be good. On the waist region, the H-type and H-hip type baby carriers showed significantly less muscle activation than the X-type baby carrier. However, subjects showed a stronger preference for the X-type baby carrier on the waist region, despite greater muscle activation. This appears to be because although the back-support band disperses the weight and thus improves physiological comfort; the wearers feel cramped and thus, lower their psychological comfort.

• International Commerce and Information Review
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• v.11 no.1
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• pp.291-308
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• 2009

The implied obligation under the contract of affreightment not to carry dangerous goods without prior notice to the carrier applies to the contractual relationship between the charterer and the owner under charterparties. The charterers will be in breach of an implied undertaking under the common law if they load dangerous cargoes without making notice of dangerous nature of them to the owner. It is indicated to be necessary to change the term "shipper" to "charterer", with relation to such implied obligation, where the Hague/Hague-Visby Rules are incorporated into the charter, however, it is not so apparent where an actual shipper is involved. So long as an actual shipper could be identified, the shipper rather than the charterer shall be responsible for damages arising from the dangerous nature of the cargo itself. In this case, the actual shipper is interpreted to have an implied contractual relationship with the carrier just by the act of delivering the cargo to the carrier for loading. If the vessel were damaged by shipment of the dangerous cargo under charterparty, the carrier can claim against such damages based on the contractual obligations under charterparties: "implied and expressed duty not to ship dangerous cargo without notice to the carrier"; "Art.IV.6 of the Hague/Hague-Visby Rules"; "Indemnity Clause" and "Redelivery Clause". The carrier has the conventional right under the Hague/Hague-Visby Rules to land, destroy or render the goods innocuous where the dangerous cargo threatens the means of transport or other interests on board. When the carrier has not consented to make the shipment, the carrier's disposal right could be exercised without limitation. However, where the carrier has consented to make the shipment of the dangerous goods with the knowledge concerned, the right of disposal of such goods should be exercised with limitation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.21-29
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• 2004

Hot carrier degradation characteristics of Nano-scale CMOSFETs with dual gate oxide have been analyzed in depth. It is shown that, PMOSFET lifetime dominate the device lifetime than NMOSFET In Nano-scale CMOSFETs, that is, PMOSFET lifetime under CHC (Channel Hot Carrier) stress is much lower than NMOSFET lifetime under DAHC (Dram Avalanche Hot Carrier) stress. (In case of thin MOSFET, CHC stress showed severe degradation than DAHC for PMOSFET and DAHC than CHC for NMOSFET as well known.) Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor in upcoming Nano-scale CMOSFET technology. In case of PMOSFETs, CHC shows enhanced degradation than DAHC regardless of thin and thick PMOSFETs. However, what is important is that hot hole injection rather than hot electron injection play a important role in PMOSFET degradation i.e. threshold voltage increases and saturation drain current decreases due to the hot carrier stresses for both thin and thick PMOSFET. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method. Therefore, suppression of PMOSFET hot carrier degradation or hot hole injection is highly necessary to enhance overall device lifetime or circuit lifetime in Nano-scale CMOSFET technology