• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.173-178
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• 2012

The $Y_2O_3$ ceramics have been widely used as plasma resistant materials in the semiconductor industry. In this study, composites made of plasma resistant $Y_2O_3$ and electrically conductive carbon have been produced. The electrical properties of this composite were measured with respect to the size, volume fraction of the conductive carbon phase, and sintering temperature. When micro-sized carbon was used, the composites were insulating up to 5 wt% addition of the carbon. However, when nano-sized carbon of around 60 ~100 nm was used, the composites became conductive over threshold volume fraction of carbon, which increased with increasing sintering temperature. This behavior of electrical conductivity of the composites was discussed in terms of the percolation theory. The percolation threshold of the conductivity seemed to be affected by the grain growth and coalescences of dispersed conductive carbon phases with grain growth of matrix $Y_2O_3$.

• Applied Chemistry for Engineering
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• v.25 no.2
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• pp.193-197
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• 2014

The electrode for gas sensor was prepared by using pitch-based activated carbon fibers and polyvinyl alcohol (PVA) to investigate the toxic gas sensing characteristics. The physicochemical properties of activated carbon fibers electrode for gas sensor were analyzed with SEM and BET. Toxic gases sensing property of the electrode was also identified by different toxic gases such as $NH_3$, NO and $CO_2$. The specific surface area of activated carbon fibers electrode for gas sensor was decreased by 33% owing to PVA used as a binder compared with the activated carbon fibers. However, its pore size distribution of the ACF electrode was not greatly influenced by PVA. The activated carbon fibers electrode for gas sensor responded to toxic gases by electron hopping unlike semiconductor based gas sensors. In this study, activated carbon fibers electrode was decreased to 7.5% in resistance for the NH3 gas of the 100 ppm concentration and its $NH_3$ gas sensing property was confirmed the most excellent compared with other toxic gases.

• Korean Journal of Materials Research
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• v.14 no.8
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• pp.542-546
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• 2004

We report a new fabrication process for high performance triode type CNT field emitters and their superior electrical properties. The CNT-based triode-type field emitter structure was fabricated by the conventional semiconductor processes. The keys of the fabrication process are spin-on-glass coating and trim-and-leveling of the carbon nanotubes grown in trench structures by employing a chemical mechanical polishing process. They lead to strong adhesion and a uniform distance from the carbon nanotube tips to the electrode. The measured emission property of the arrays showed a remarkably uniform and high current density. The gate leakage current could be remarkably reduced by coating of thin $SiO_{2}$ insulating layer over the gate metal. The field enhancement factor(${\beta}$) and emission area(${\alpha}$) were calculated from the F-N plot. This process can be applicable to fabrication of high power CNT vacuum transistors with good electrical performance.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.467-470
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• 2004

Diamond-Like Carbon (DLC) thin film is a semiconductor with high mechanical hardness, low friction coefficient, high chemical inertness, and optical transparency. DLC thin films have widespread applications as protective coatings and solid lubricant coatings in areas such as Hard Disk Drive (HDD) and Micro-Electro-Mechanical-Systems (MEMS). In this work, the wear characteristics of DLC thin films deposited on silicon substrates using a DC-magnetron sputtering system were analyzed. The wear tracks were measured with an Atomic Force Microscope (AFM). To identify the sp2 and sp3 hybridization of carbon bonds and other bonds Raman spectroscopy was used. The structural information of DLC thin films was obtained with Fourier transform infrared spectroscopy and wear tests were conducted by using a micro-pin-on-reciprocator tester. Results showed that the wear characteristics were dependent on the sputtering conditions. The wear rate could be correlated with the bonding state of the DLC thin film.

• Journal of Sensor Science and Technology
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• v.26 no.3
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• pp.204-208
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• 2017

Highly uniform and well-dispersed Zeolitic Imidazolate Framework-7 (ZIF-7) particles were prepared by the precipitation of $Zn^{2+}$ using benzimidazole, which were converted into ZnO nanoparticles by heat treatment at $500^{\circ}C$ for 24 h. The ZIF-7 derived ZnO nanoparticles showed abundant mesopores, high surface area, and good dispersion. The gas sensing characteristics toward 5 ppm acetone, ethanol, trimethylamine, ammonia, p-xylene, toluene, benzene, and carbon monoxide and carbon dioxide were investigated at $350-450^{\circ}C$. ZIF-7 derived ZnO nanoparticles exhibited high response to 5 ppm acetone ($R_a/R_g=57.6$; $R_a$: resistance under exposure to the air, Rg: resistance under exposure to the gas) at $450^{\circ}C$ and negligible cross-responses to other interference gases (trimethylamine, ammonia, p-xylene, toluene, benzene, carbon monoxide, carbon dioxide) and relatively low responses to ethanol. ZIF derived synthesis of metal oxide nanoparticles can be used to design high performance acetone sensors.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.9
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• pp.2065-2070
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• 2010

The diluted PMMA treated $SiO_2$ films as an passivation materials for semiconductor devices was researched by using the FTIR spectra. The diluted PMMA solution with various ratios changed the surface of $SiO_2$ film as the hydrophilic, hydrophobic or hybrid type properties. The sample 7 with little carbon content showed dramatically the chemical variation by the FTIR spectra analysis. Beacuse the little carbon with electrons decreased the polarity and surface energy on the $SiO_2$ film, and then became a stable bonding structure and decreased the leakage current. The FTIR spectra can define the detail variation due to the chemical reaction on the organic thin film, and help to research the characteristic of the organic materials.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.331-336
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• 2005

The influence of water molecule on the electrical properties of single-walled carbon nanotube field effect transistors (SWNT-FETs) was reported. Conductance suppression was observed with the increase of the humidity. This can be explained by doping of the SWNT-FETs, which has p-type semiconductor characteristic, with the water molecules acting as an electron donor. However, after 65 % of humidity, conductance of the SWNT-FETs started to increase again, due to the opening of electron channels. Upon annealing at $400^{\circ}C$ in Ar atmosphere, conductance increases more than 500 %, and the threshold voltage shifts toward further positive gate voltages. The results of this experiment support possible application of single-walled carbon nanotubes for humidity sensing material.

• Journal of the Semiconductor & Display Technology
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• v.2 no.3
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• pp.7-11
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• 2003

In this research, the etching characteristics of via contact and deep contact hole have been studied using multi-pole inductively coupled plasma(MICP) etching system. We investigated Plasma density of MICP source using the Langmuir probe and etching characteristics with RF frequency, wall temperature, chamber gap, and gas chemistry containing Carbon and Fluorine. As the etching time increases, formation of the polymer increases. To improve the polymer formation, we controlled the temperature of the reacting chamber, and we found that temperature of the chamber was very effective to decrease the polymer thickness. The deep contact etch profile and high selectivity(oxide to photoresist) have been achieved with the optimum mixed gas ratio containing C and F and the temperature control of the etching chamber.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.215-217
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• 2007

반도체 집적화 기술의 발달로 반도체 공정에서 디바이스의 선폭은 줄어들고, 박막의 다층화가 필수적인 과정이 되었다. 이에 따라 반도체에서 Si 기판과 금속 배선과의 열적 안정성에 대한 신뢰성이 더욱 중요시 되어가고 있다. 이를 방지하기 위하여 우리는 3개의 화합물로 구성된 Tungsten-Carbon-Nitrogen (W-C-N) 확산방지막을 사용하였다. 실험은 Si 기판위에 W-C-N박막을 물리적 기상 증착법(PVD)으로 질소비율을 변화하며 확산방지막을 증착하여 Si 기판과 W-C-N확산방지막의 특성을 여러 온도 열처리 조건에서 확인하였다. 특성을 분석을 위하여 ${\alpha}-step$과 ${\beta}-ray$를 이용하여 증착률을 확인한 후 4-point probe를 이용하여 비저항을 측정하였고, X-ray Diffraction 분석을 통하여 결정 내부의 변화를 확인하였다. 이를 통하여 W-C-N 확산방지막의 열적인 안정성을 질소변화에 따라 조사하였다.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.25-29
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• 2016

The semiconductor industry has been developed mainly by micronization process due to many advantages of miniaturization of devices. Mass production of semiconductors of 10 nm class has been started recently, and it is expected that the technology generation of 5 nm & 7 nm technology will come. However, excessive linewidth reduction affects physical limits and device reliability. To solve these problems, new process technology development and new concept devices are being studied. In this review, we introduce the next generation technology and introduce the advanced research for the new concept device.