• Transactions on Electrical and Electronic Materials
• /
• 제5권3호
• /
• pp.98-103
• /
• 2004

The plasma properties in the facing target sputtering system during carbon nitride film deposition have been investigated. The ionized nitrogen species of the deposited films increased with increasing discharge current and were independent of the nitrogen pressure. The nitrogen content in the films did not vary significantly with the variation of nitrogen gas. The electron temperature was high close to that in the inter-cathode region, reduced as the electrons moved away from the most intense region of magnetic confinement and increased again outside this region. Calculations based on the film composition showed that the ion to carbon atom ratio at the substrate was about 50 and that the ratio between the ionized and neutral nitrogen molecules was about 0.25.

• 한국진공학회지
• /
• 제14권3호
• /
• pp.165-170
• /
• 2005

의료용 임플랜트의 혈액적합성 개선을 위하여 박막코팅에 대한 관심이 증대하고 있다. 특히 diamond-like carbon(DLC)과 titanium nitride(TiN) 박막은 우수한 화학, 물리적 성질은 물론 생체적합 특성까지 갖추고 있다. 따라서 이들 박막의 혈액 적합성과 물리적 특성과의 관개를 연구하기 위하여 박막표면의 모폴로지 및 젖음성과 fibrinogen흡착 특성을 비교 분석하였다. 혈액응고 원인이 되는 fibrinogen의 흡착량은 DLC보다 TiN의 경우가 적어, 보다 우수한 특성을 보였으며, 이것은 TiN박막 표면의 높은 친수성으로 인한 것으로 판단된다. 박막표면의 fibrinogen 흡착을 줄이기 위해 플라즈마 처리 및 노(爐) 열처리를 각각 수행하였다. 산소 플라즈마 및 열처리를 하였을 경우 DLC 박막은 큰 효과가 없는 반면 TiN 박막의 경우 fibrinogen 흡착량이 크게 줄어 보다 개선된 결과를 보였다.

• 한국재료학회지
• /
• 제13권5호
• /
• pp.303-308
• /
• 2003

Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

• Transactions on Electrical and Electronic Materials
• /
• 제3권3호
• /
• pp.29-33
• /
• 2002

A procedure was developed for preparing bulk carbon nitride crystals from a polymeric $\alpha$ -C$_3$N$\_$4.2/ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma combined with pulsed laser ablation of graphite target. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared (IR) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and x-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrate that the nitrogen composition in $\alpha$ -C$_3$N$\_$4.2/ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~45%. The thermobaric experiments were performed at 10-77 kbar and 350-1200 $\^{C}$.

• 한국표면공학회지
• /
• 제56권5호
• /
• pp.328-334
• /
• 2023

The carbon-based films have various properties, which have been widely applied in industrial application. However, it has critical drawback for poor adhesion between films and metal substrate. In the present work, we have deposited carbon-based films on injection mold steel by plasma assisted chemical vapor deposition (PACVD). In order to improve adhesion, prior to film deposition, the substrate was nitriding-treated using PACVD. And its effect on the adhesion was investigated. Due to the pre-nitriding, the amorphous carbon nitride (a-CN:H) films presented 10 times higher adhesion (34.9 N) than that of un-nitirided. In addition, a friction coefficient was decreased from 0.29 to 0.15 for the amorphous carbon (a-C:H) due to improved adhesion. The obtained results demonstrated that pre-nitriding considerably improved the adhesion, and the relationship among adhesion, hardness, and surface roughness was discussed in detail.

• 한국자기학회지
• /
• 제18권1호
• /
• pp.32-35
• /
• 2008

차세대 반도체 산업의 발전을 위하여 반도체 소자의 구조는 DRAM, FRAM, MRAM 등 여러 분야에서 다양한 연구가 진행되고 있다. 특히 이런 차세대 반도체 소자에서 금속 배선으로는 Cu가 사용되며, Cu 금속 배선을 위한 확산방지막에 대한 연구는 반드시 필요하다[1-3]. Cu 금속 배선을 위한 확산방지막에 대한 현재까지의 연구에서는 Tungsten(W)을 기반으로 Nitride(N)를 불순물로 첨가한 확산방지막에 대하여 연구되었다[4-7]. 이러한 W-N를 기반으로 본 연구에서는 물리적 기상 증착법(PVD) 방법인 RF Magnetron Sputter 방법으로 W-N 이외에 Carbon(C) 과 Boron(B)을 첨가하여 확산방지막의 특성을 확인하였고, 특히 Boron Target의 power를 변화하여 W-B-C-N 확산방지막의 Boron에 의한 특성과 열적 안정성을 연구하였다[8-10]. 실험은 다양한 Boron의 조성을 가지는 확산방지막을 증착하여 $\beta$-ray와 4-point probe를 사용하여 확산방지막의 특성을 확인하였고, 고온($700^{\circ}C{\sim}1000^{\circ}C$) 열처리한 후 X-ray Diffraction 분석을 하여 열적 안정성을 확인하였다.

• 대한치과보철학회지
• /
• 제39권1호
• /
• pp.84-95
• /
• 2001

Titanium is widely used in dentistry for its low density, high strength, fatigue resistance, corrosion resistance, and biocompatibility. But it has a tendency of surface damage under circumstance of friction and impact for its low hardness of the surface. Coating is one of methods fir increasing surface hardness. Its effect is to improve surface physical characteristics without change of titanium. Diamond-like carbon and titanium nitride are known for its high hardness of the surface. So that this study was aimed at the wear test and the cytotoxicity test of the commercially pure titanium and Ti-6Al-4V alloy which were deposited by diamond-like carbon film or titanium nitride film to acertain improvement of the surface hardness and the biocompatibility. A disk (25mm diameter, 2mm thickness) was made of commercially pure titanium and Ti-6Al-4V alloy and these substrates were deposited by diamond-like carbon film or titanium nitride film. Diamond-like carbon film was deposited by the method of radiofrequency plasma assisted chemical vapor deposition and titanium nitride film was deposited by the method of reactive arc ion plating. Then these substrates were tested about wear characteristics by the pin-on-disk type wear tester in which ruby ball was used as a wear causer under the load of 32N, The fracture cycles were measured by rotating the substrates until their films were fractured. The wear volume was measured after 150 cycles and 3,000 cycles using surface profiler. The cytotoxicity test was peformed by the method of the MTT assay. The results were as follows : 1. In the results of the wear volume test, commercially pure titanium and titanium alloy which were coated by diamond-like carbon film or titanium nitride aim had higher resistance against wear than the substrates which were not coated by any films (P<0.05). 2. In the results of the fracture cycle test and the wear volume test, diamond-like carbon film had higher resistance against wear than titanium nitride film (P<0.05). 3. In both coatings of diamond-like carbon aim and titanium nitride film, Ti-6Al-4V alloy had higher resistance against wear than commercially pure titanium (P<0.05) 4. In the results of the cytotoxicity test, diamond-like carbon film and titanium nitride film had little cytotoxicity as like commercially pure titanium or Ti-6Al-4V alloy (P>0.05).

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2000년도 추계학술발표회 초록집
• /
• pp.3-4
• /
• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 제40회 하계학술대회
• /
• pp.1244_1245
• /
• 2009

Coating of amorphous nitride thin layers, such as boron nitride (BN) and carbon nitride (CN), has been performed on carbon nanotubes (CNTs) for the purpose of enhancing their electron-emission performances because those nitride films have relatively low work functions and commonly exhibit negative electron affinity behavior. The CNTs were directly grown on metal-tip (tungsten, approximately 500 nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). Sharpening of the tungsten tips were carried out by electrochemical etching. Morphologies and microstructures of BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM), energy dispersive x-ray (EDX) spectroscopy, and Raman spectroscopy. The electron-emission properties (such as maximum emission currents and turn-on fields) of the BN-coated and CN-coated CNT-emitters were characterized in terms of the thickness of BN and CN layers.

• 한국전기전자재료학회논문지
• /
• 제15권5호
• /
• pp.455-459
• /
• 2002

I have investigated the effects of annealing on a polymeric $\alpha-C_3N_{4.2}$ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared spectroscopy, Auger electron spectroscopy and x-ray diffraction(XRD). Notably, XPS studies of the film composition before and after annealing demonstrate that the nitrogen composition in $\alpha-C_3N_{4.2}$ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~43%. XPS analysis also shows that the nitrogen composition in the annealed films without polymeric $\alpha-C_3N_{4.2}$ was reduced from 35% to 17%. Furthermore the concentration of the sp$^3$bonded phase increased with the increment of the annealing temperature.