[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/TEEM.2004.5.3.098

Plasma Characterization of Facing Target Sputter System for Carbon Nitride Film Deposition

Lee, Ji-Gong (Department of Electronic and Electrical Engineering Kyungnam University)
Lee, Sung-Pil (Department of Electronic and Electrical Engineering Kyungnam University)

Publication Information

Transactions on Electrical and Electronic Materials / v.5, no.3, 2004 , pp. 98-103 More about this Journal

Abstract

The plasma properties in the facing target sputtering system during carbon nitride film deposition have been investigated. The ionized nitrogen species of the deposited films increased with increasing discharge current and were independent of the nitrogen pressure. The nitrogen content in the films did not vary significantly with the variation of nitrogen gas. The electron temperature was high close to that in the inter-cathode region, reduced as the electrons moved away from the most intense region of magnetic confinement and increased again outside this region. Calculations based on the film composition showed that the ion to carbon atom ratio at the substrate was about 50 and that the ratio between the ionized and neutral nitrogen molecules was about 0.25.

Keywords

Plasma; Facing target sputter; Carbon nitride film; Electron temperature;

Citations & Related Records

Reference

1	D. Marton, K. J. Boyd, and J. W. Rabalais, 'Synthesis of carbon nitride', International Journal of Modern Physics B, Vol. 9, No. 27, p. 3527, 1995 DOI
2	L. I. Maissel and R. GIang, 'Handbook of Thin Film Technology', MaGraw-Hill, p. 1, 1970
3	S. Kadokura, T. Tomie, and M. Naoe, 'Deposition of Co-Cr films for perpendicular magnetic recording by improved opposing targets sputtering', IEEE Trans. Magn., Mag-17, 6, p. 3175, 1981 DOI
4	S. P. Lee and J. B. Kang and S. Chowdhury, 'Effect of hydrogen on carbon nitride film deposition', J. Korean Phys. Soc., Vol. 39, p. s1, 2001
5	J. R. Shi and J. P. Wang, 'Diamond-like carbon films prepared by facing-target sputtering', Thin Solid Films, Vol. 420-421, p. 172, 2002 DOI ScienceOn
6	J. W. Kim and H. K. Kim, 'Low Temperature Epitaxial Growth of AIN Thin Films on $AL_2O_3$ (0001) by Reactive dc Faced Magnetron Sputtering', J. Korean Phys. Soc., Vol. 32, p. 1664, 1998
7	T. Takahashi and H. Nakabashi, 'Dependence of working gas pressure and ratio of Ar to $O_2$ on properties of $TiO_2$ films deposited by facing targets sputtering', Thin Solid Films, Vol. 420-421, p. 433, 2002 DOI ScienceOn
8	T. Okada, S. Yamada, Y. Takeuchi, T. Wada, 'Formation of carbon nitride films with high N/C ratio by high-pressure radio frequency magnetron sputtering', J. Appl. phys., Vol. 78 No. 12, p. 7416, 1995 DOI
9	Y. W. Park, S. J. Yoon, J. G. Lee, Y. J. Baik, H. J. Kim, H. J. Jung, W. K. Choi, B. H. Cho, and C. Y. Park, 'Characteristics of ZnO/Diamond thin films prepared by RF magnetron sputtering', J. Korean Phys. Soc., Vol. 35, p. 517,1999
10	J. M. E. Harper in Kern, and Vossen (Eds.), Thin Film Process, Academic Press, New York, p. 178, 1978
11	A. Lunk and R. Badner, 'Langmuir probe plasma diagnostics during TiNx deposition', Mat. Sci. and Eng., A139, p. 41, 1991
12	C. M. Sung, M. Sung, 'Carbon nitride and other speculative superhard materials', Materials Chemistry and Physics, Vol. 43, p. 1, 1996 DOI ScienceOn
13	M. Naoe, S. Yamanaka, and Y. Hoshi, 'Facing targets type of sputtering method for deposition of magnetic metal films at low temperature and high rate', IEEE Trans. Magn., Mag-16, 5, p. 646, 1980