• Title/Summary/Keyword: carbon nanotube(CNT)

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Evaluating Joint Motion Sensing Efficiency According to the Implementation Method of CNT-Based Fabric Sensors (CNT 기반의 직물센서 구현 방법에 따른 관절동작 센싱 효율 평가)

  • Cho, Hyun-Seung;Yang, Jin-Hee;Lee, Joo-Hyeon
    • Science of Emotion and Sensibility
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    • v.24 no.4
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    • pp.129-138
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    • 2021
  • This study aimed to determine the effects of the shape and attachment position of stretchable textile sensors coated with carbon nanotube on their performance when used to measure children's joint movements. Moreover, the child-safe requirements for fabric motion sensors are established. The child participants were advised to wear integrated clothing equipped with the sensors of various shapes (rectangular and boat-shaped) and attachment positions (at the knee and elbow joints or 4 cm below the joints). The voltage change induced by the elongation and contraction of the fabric sensors was determined for arm and leg flexion-extension motions at 60 deg/s (three measurements of 10 repeats each for 60°and 90°angles, for a total of 60 repetitions). Their dependability was determined by comparing the fabric motion sensors to the associated acceleration sensors. The experimental results indicate that the rectangular-shaped sensor affixed 4 cm below the joint is the most effective fabric motion sensor for measuring children's arm and leg motions. In this study, we designed a textile sensor capable of tracking children's joint motion and analyzed the sensor shape and attachment position on motion sensing clothing. We demonstrated that flexible fabric sensors integrated into garments may be used to detect the joint motions of the human body.

Carbon nanotube field emission display

  • Chil, Won-Bong;Kim, Jong-Min
    • Electrical & Electronic Materials
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    • v.12 no.7
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    • pp.7-11
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    • 1999
  • Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

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Carbon Nanotube Technology Classification by Analyzing Patent Information (특허 분석을 통한 탄소나노튜브(CNT)의 기술 분류)

  • 류희장;박용태
    • Proceedings of the Technology Innovation Conference
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    • 2005.06a
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    • pp.69-91
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    • 2005
  • 나노 기술은 국가와 기업 차원에서 전략적으로 활발하게 연구, 개발되고 있는 분야로 기술과 산업 전 분야에 걸쳐 있으며 계속 확대되고 있다. 이중 탄소나노튜브는 약 10년여 전부터 활발히 연구되고 있으며, 소재, 소자 등 나노 기술의 전 분야에 걸쳐서 적용될 수 있는 물질로 현재까지 실용화된 기술이나 제품이 많이 나오지는 않았으나 앞으로 다양한 적용분야가 창출될 전망이다. 그러나 전략적인 기술 개발을 위한 연구는 미비한 실정이다. 전략적이고 효과적인 기술 개발의 대안으로 특허 분석(patent analysis)이 제시되고 있으며 나노 기술에 대한 전반적인 특허 분석은 각 기업 연구소나 국가 연구소에서 진행되어 왔으나, 여기서 도출된 정보만으로는 전략적인 문제들을 분석하기에는 미흡하였다. 따라서 전략적인 기술 개발을 위한 특허 분석의 필요성이 제기되고 있다. 이에 본 연구에서는 특허의 인용(citation) 정보를 이용하여 특허와 특허 사이의 관계를 분석하고 이를 바탕으로 관련된 특허를 군집화(clustering) 하여 각 군집의 특성을 살펴보았다. 먼저 탄소나노튜브에 관한 특허를 USPTO 자료를 통해 추출하고, 이 특허들이 인용한 특허들을 추출하여 각 특허들이 어느 정도로 관련이 되어 있는가를 상관 행렬(correlation matrix)을 이용하여 조사하였다. 인용 특허의 분석은 기초 기술 분야에 이르기까지 광범위하게 조사하여 기술별로 특허를 군집화 하였을 뿐만 아니라, 특허 출원인 정보도 활용하여 군집화 하였다. 이를 통하여 기술별, 특허 출원인 별로 특허의 군집을 만들어서 각 군집의 특성을 도출하였고, 마지막으로 각 군집의 특성에 맞게 기술 개발측면에서 전략적인 시사점을 도출하였다. 각각의 군집들은 시간이 지날수록 확대, 통합되는 결과를 보이고 있으며, 융합기술화 되고 있다. 군집을 이루는 주요한 특성으로는 출원인 정보가 큰 비중을 차지하였으며, 이는 출원인의 기술 개발 전략과 이에 따른 기술개발경로나 특허 전략과 관련이 있는 것으로 나타났다. 다양한 기술에 관하여 군집의 크기가 계속 확대되고 있는 경향을 보이고 있기 때문에, 앞으로 지속적인 연구를 통하여 향후 특허 관리와 특허 전략에 적용할 수 있도록 하는 것이 중요하다.

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탄소나노튜브-그래핀 하이브리드 박막을 이용한 투명전극과 전계효과트랜지스터로의 응용

  • Kim, Seong-Ho;Song, U-Seok;Jeong, Min-Uk;Gang, Min-A;Lee, Seon-Suk;Im, Jong-Seon;Hwang, Jin-Ha;Myeong, Seong;An, Gi-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.177.1-177.1
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    • 2014
  • 단일벽 탄소나노튜브(single-wall carbon nanotube)와 그래핀(graphene)과 같은 저차원 구조의 탄소물질은 우수한 기계적, 전기적, 열적 광학적 특성으로 인해 투명하고 유연한 차세대 전자소자로의 응용(투명전극, 투명트랜지스터, 투명센서 등)을 위한 연구가 활발히 진행되고 있다. 본 연구에서는 단일벽 탄소나노튜브와 단일층 그래핀을 이용한 하이브리드 박막을 제작하여 투명전극(transparent electrode)과 전계효과 트랜지스터(field effect transistors)로의 응용 가능성을 연구하였다. 하이브리드 박막의 제작은 간단한 방법으로 단일벽 탄소나노튜브가 스핀 코팅된 구리 호일 위에 열 화학기상증착법(thermal chemical vapor deposition)을 통해 제작 하였다. 제작 과정 중 탄소나노튜브의 스핀코팅 조건을 최적화하여 하이브리드 박막에서 탄소나노 튜브의 밀도와 정렬을 제어하였으며 하이브리드 박막 제작 후 스핀 코팅 방향에 따른 박막의 저항을 측정하여 단일벽 탄소나노튜브의 코팅 방향에 따라 박막의 저항이 달라지는 모습을 확인할 수 있었다. 하이브리드 박막의 투명전극 특성을 확인 한 결과 $300{\Omega}/sq$의 면저항에 96.4%의 우수한 투과도를 보이는 것을 확인 할 수 있었다. 또한 하이브리드 박막은 CVD 그래핀과 비교하여 향상된 와 on-state current를 보이는 것을 확인 할 수 있었다. 우리는 단일벽 탄소나노튜와 단일층 그래핀으로 이루어진 하이브리드 박막이 앞으로의 투명하고 유연한 소자제작 연구에 있어 새로운 투명 전극 및, 트랜지스터 제작 방법을 제시 할 수 있을 것이다.

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Label-free Femtomolar Detection of Cancer Biomarker by Reduced Graphene Oxide Field-effect Transistor

  • Kim, Duck-Jin;Sohn, Il-Yung;Jung, Jin-Heak;Yoon, Ok-Ja;Lee, N.E.;Park, Joon-Shik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.549-549
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    • 2012
  • Early detection of cancer biomarkers in the blood is of vital importance for reducing the mortality and morbidity in a number of cancers. From this point of view, immunosensors based on nanowire (NW) and carbon nanotube (CNT) field-effect transistors (FETs) that allow the ultra-sensitive, highly specific, and label-free electrical detection of biomarkers received much attention. Nevertheless 1D nano-FET biosensors showed high performance, several challenges remain to be resolved for the uncomplicated, reproducible, low-cost and high-throughput nanofabrication. Recently, two-dimensional (2D) graphene and reduced GO (RGO) nanosheets or films find widespread applications such as clean energy storage and conversion devices, optical detector, field-effect transistors, electromechanical resonators, and chemical & biological sensors. In particular, the graphene- and RGO-FETs devices are very promising for sensing applications because of advantages including large detection area, low noise level in solution, ease of fabrication, and the high sensitivity to ions and biomolecules comparable to 1D nano-FETs. Even though a limited number of biosensor applications including chemical vapor deposition (CVD) grown graphene film for DNA detection, single-layer graphene for protein detection and single-layer graphene or solution-processed RGO film for cell monitoring have been reported, development of facile fabrication methods and full understanding of sensing mechanism are still lacking. Furthermore, there have been no reports on demonstration of ultrasensitive electrical detection of a cancer biomarker using the graphene- or RGO-FET. Here we describe scalable and facile fabrication of reduced graphene oxide FET (RGO-FET) with the capability of label-free, ultrasensitive electrical detection of a cancer biomarker, prostate specific antigen/${\alpha}$ 1-antichymotrypsin (PSA-ACT) complex, in which the ultrathin RGO channel was formed by a uniform self-assembly of two-dimensional RGO nanosheets, and also we will discuss about the immunosensing mechanism.

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뉴로모픽 시스템용 시냅스 트랜지스터의 최근 연구 동향

  • Nam, Jae-Hyeon;Jang, Hye-Yeon;Kim, Tae-Hyeon;Jo, Byeong-Jin
    • Ceramist
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    • v.21 no.2
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    • pp.4-18
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    • 2018
  • Lastly, neuromorphic computing chip has been extensively studied as the technology that directly mimics efficient calculation algorithm of human brain, enabling a next-generation intelligent hardware system with high speed and low power consumption. Three-terminal based synaptic transistor has relatively low integration density compared to the two-terminal type memristor, while its power consumption can be realized as being so low and its spike plasticity from synapse can be reliably implemented. Also, the strong electrical interaction between two or more synaptic spikes offers the advantage of more precise control of synaptic weights. In this review paper, the results of synaptic transistor mimicking synaptic behavior of the brain are classified according to the channel material, in order of silicon, organic semiconductor, oxide semiconductor, 1D CNT(carbon nanotube) and 2D van der Waals atomic layer present. At the same time, key technologies related to dielectrics and electrolytes introduced to express hysteresis and plasticity are discussed. In addition, we compared the essential electrical characteristics (EPSC, IPSC, PPF, STM, LTM, and STDP) required to implement synaptic transistors in common and the power consumption required for unit synapse operation. Generally, synaptic devices should be integrated with other peripheral circuits such as neurons. Demonstration of this neuromorphic system level needs the linearity of synapse resistance change, the symmetry between potentiation and depression, and multi-level resistance states. Finally, in order to be used as a practical neuromorphic applications, the long-term stability and reliability of the synapse device have to be essentially secured through the retention and the endurance cycling test related to the long-term memory characteristics.

A Molecular Dynamics Simulation Study on the Thermoelastic Properties of Poly-lactic Acid Stereocomplex Nanocomposites (분자동역학 전산모사를 이용한 폴리유산 스테레오 콤플렉스 나노복합재의 가수분해에 따른 열탄성 물성 예측 연구)

  • Ki, Yelim;Lee, Man Young;Yang, Seunghwa
    • Composites Research
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    • v.31 no.6
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    • pp.371-378
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    • 2018
  • In this study, the thermoelastic properties of poly lactic acid (PLA) based nanocomposites are predicted by molecular dynamics (MD) simulation and a micromechanics model. The stereocomplex mixed with L-lactic acid (PLLA) and D-lactic acid (PDLA) is modeled as matrix phase and a single walled carbon nanotube is embedded as reinforcement. The glass transition temperature, elastic moduli and thermal expansion coefficients of pure matrix and nanocomposites unit cells are predicted though ensemble simulations according to the hydrolysis. In micromechanics model, the double inclusion (D-I) model with a perfect interface condition is adopted to predict the properties of nanocomposites at the same composition. It is found that the stereocomplex nanocomposites show prominent improvement in thermal stability and interfacial adsorption regardless of the hydrolysis. Moreover, it is confirmed from the comparison of MD simulation results with those from the D-I model that the interface between CNT and the stereocomplex matrix is slightly weak in nature.

Enhancement of Penetration by Using Mechenical Micro Needle in Textile Strain Sensor (텍스타일 스트레인 센서에 마이크로 니들을 이용한 전도성입자 침투력 향상)

  • Hayeong Yun;Wonjin Kim;Jooyong Kim
    • Science of Emotion and Sensibility
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    • v.25 no.4
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    • pp.45-52
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    • 2022
  • Recently, interest in and demand for sensors that recognize physical activity and their products are increasing. In particular, the development of wearable materials that are flexible, stretchable, and able to detect the user's biological signals is drawing attention. In this study, an experiment was conducted to improve the dip-coating efficiency of a single-walled carbon nanotube dispersion solution after fine holes were made in a hydrophobic material with a micro needle. In this study, dip-coating was performed with a material that was not penetrated, and comparative analysis was performed. The electrical conductivity of the sensor was measured when the sensor was stretched using a strain universal testing machine (Dacell Co. Ltd., Seoul, Korea) and a multimeter (Keysight Technologies, Santa Rosa, CA, USA) was used to measure resistance. It was found that the electrical conductivity of a sensor that was subjected to needling was at least 16 times better than that of a sensor that was not. In addition, the gauge factor was excellent, relative to the initial resistance of the sensor, so good performance as a sensor could be confirmed. Here, the dip-coating efficiency of hydrophobic materials, which have superior physical properties to hydrophilic materials but are not suitable due to their high surface tension, can be adopted to more effectively detect body movements and manufacture sensors with excellent durability and usability.

Effect of the catalyst deposition rates on the growth of carbon nanotubes

  • Ko, Jae-Sung;Choi, In-Sung;Lee, Nae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.264-264
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    • 2010
  • Single-walled carbon nanotubes (SWCNTs) were grown on a Si wafer by using thermal chemical vapor deposition (t-CVD). We investigated the effect of the catalyst deposition rate on the types of CNTs grown on the substrate. In general, smaller islands of catalyst occur by agglomeration of a catalyst layer upon annealing as the catalyst layer becomes thinner, which results in the growth of CNTs with smaller diameters. For the same thickness of catalyst, a slower deposition rate will cause a more uniformly thin catalyst layer, which will be agglomerated during annealing, producing smaller catalyst islands. Thus, we can expect that the smaller-diameter CNTs will grow on the catalyst deposited with a lower rate even for the same thickness of catalyst. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. The catalyst layers were. coated by using thermal evaporation. The deposition rates of the Al and Fe layers varied to be 90, 180 sec/nm and 70, 140 sec/nm, respectively. We prepared the four different combinations of the deposition rates of the AI and Fe layers. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of $H_2$ as a carrier gas and 20 sccm of $C_2H_2$ as a feedstock at 95 torr and $810^{\circ}C$. The substrates were subject to annealing for 20 sec for every case to form small catalyst islands prior to CNT growth. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, UV-Vis NIR spectroscopy, and atomic force microscopy. The fast deposition of both the Al and Fe layers gave rise to the growth of thin multiwalled CNTs with the height of ${\sim}680\;{\mu}m$ for 10 min while the slow deposition caused the growth of ${\sim}800\;{\mu}m$ high SWCNTs. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of $113.3{\sim}281.3\;cm^{-1}$, implying the presence of SWCNTs (or double-walled CNTs) with the tube diameters 2.07~0.83 nm. The Raman spectra of the as-grown SWCNTs showed very low G/D peak intensity ratios, indicating their low defect concentrations.

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Programmed APTES and OTS Patterns for the Multi-Channel FET of Single-Walled Carbon Nanotubes (SWCNT 다중채널 FET용 표면 프로그램된 APTES와 OTS 패턴을 이용한 공정에 대한 연구)

  • Kim, Byung-Cheul;Kim, Joo-Yeon;An, Ho-Myoung
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.8 no.1
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    • pp.37-44
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    • 2015
  • In this paper, we have investigated a selective assembly method of single-walled carbon nanotubes (SWCNTs) on a silicon substrate using only photolithographic process and then proposed a fabrication method of field effect transistors (FETs) using SWCNT-based patterns. The aminopropylethoxysilane (APTES) patterns, which are formed for positively charged surface molecular patterns, are utilized to assemble and align millions of SWCNTs and we can more effectively assemble on a silicon (Si) surface using this method than assembly processes using only the 1-octadecyltrichlorosilane (OTS). We investigated a selective assembly method of SWCNTs on a Si surface using surface-programmed APTES and OTS patterns and then a fabrication method of FETs. photoresist(PR) patterns were made using photolithographic process on the silicon dioxide (SiO2) grown Si substrate and the substrate was placed in the OTS solution (1:500 v/v in anhydrous hexane) to cover the bare SiO2 regions. After removing the PR, the substrate was placed in APTES solution to backfill the remaining SiO2 area. This surface-programmed substrate was placed into a SWCNT solution dispersed in dichlorobenzene. SWCNTs were attracted toward the positively charged molecular regions, and aligned along the APTES patterns. On the contrary, SWCNT were not assembled on the OTS patterns. In this process, positively charged surface molecular patterns are utilized to direct the assembly of negatively charged SWCNT on SiO2. As a result, the selectively assembled SWCNT channels can be obtained between two electrodes(source and drain electrodes). Finally, we can successfully fabricate SWCNT-based multi-channel FETs by using our self-assembled monolayer method.