• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.48-55
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• 2024

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, series-type potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when P_r decreases and E_c increases, and the threshold voltage is also maintained constant when the P_r/E_c is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to P_r/E_c, so the DIBL greatly changes for P_r/E_c. In other words, when P_r/E_c=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO₂ thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the P_r/E_c is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the P_r and E_c of ferroelectric.

• ETRI Journal
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• 제30권6호
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• pp.826-832
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• 2008

The metal-ferroelectric-metal (MFM) capacitor in the ferroelectric random access memory (FeRAM) embedded RFID chip is used in both the memory cell region and the peripheral analog and digital circuit area for capacitance parameter control. The capacitance value of the MFM capacitor is about 30 times larger than that of conventional capacitors, such as the poly-insulator-poly (PIP) capacitor and the metal-insulator-metal (MIM) capacitor. An MFM capacitor directly stacked over the analog and memory circuit region can share the layout area with the circuit region; thus, the chip size can be reduced by about 60%. The energy transformation efficiency using the MFM scheme is higher than that of the PIP scheme in RFID chips. The radio frequency operational signal properties using circuits with MFM capacitors are almost the same as or better than with PIP, MIM, and MOS capacitors. For the default value specification requirement, the default set cell is designed with an additional dummy cell.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.78-81
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• 2004

A technical performance of the coating depends greatly on the thickness of painting film or coating film. Therefore the confirmed report of the technique to measure accurately is essential to the coating film thickness for the assessment about a coating quality performance. In this paper, two gap sensors - eddy current gap sensor and capacitance gap sensor - which has a different operating principle were used to measure the thickness of a nonmagnetic substance coating film such as paint, enamel or ceramic that was coated on the metallic material. A capacitance gap sensor was used to measure the distance between the sensor head and a coating film and an eddy current gap sensor to measure the distance between the sensor head and a base metal. Then the thickness of a coating film was obtained by the difference of two measurement value. At this result, the suggested dual sensor can measure an arbitrary film thickness to be coated on a base metal as the measurement value of coating thickness exists accurately within the 2％ error.

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.69-73
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• 2007

The MIM(metal-insulator-metal) capacitors with the Al/PMMA/ITO/Glass structures were manufactured according to various PMMA concentration of 1, 2, 4, 6, 8 wt%. The lowest leakage current and the largest capacitance were found to be 2.3 pA and 1.2 nF, respectively, for the device with 2 wt% PMMA concentration. The measured capacitance of the devices was almost same values with the calculated one. The optimum film thickness was obtained at the value of 48 nm, showing that the capacitance and leakage current were 1.92 nF, 0.3 pA at 2 wt%, respectively. From this experiment, the PMMA gate insulator films can be applicable to the organic thin film transistors.

• International Journal of Aeronautical and Space Sciences
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• 제17권4호
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• pp.501-517
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• 2016

Synchronized switch damping (SSD) is a structural vibration control technique in which a piezoelectric patch attached to or embedded into the structure is connected to or disconnected from the shunt circuit in order to dissipate the vibration energy of the host structure. The switching process is performed by a digital signal processor (DSP) which detects the displacement extrema and generates a command to operate the switch in synchronous with the structure motion. Recently, autonomous SSD techniques have emerged in which the work of DSP is taken up by a low pass filter, thus making the whole system autonomous or self-powered. The control performance of the previous autonomous SSD techniques heavily relied on the electrical quality factor of the shunt circuit which limited their damping performance. Thus in order to reduce the influence of the electrical quality factor on the damping performance, a new autonomous SSD technique is proposed in this paper in which a negative capacitor is used along with the inductor in the shunt circuit. Only a negative capacitor could also be used instead of inductor but it caused saturation of negative capacitor in the absence of an inductor due to high current generated during the switching process. The presence of inductor in the shunt circuit of negative capacitor limits the amount of current supplied by the negative capacitance, thus improving the damping performance. In order to judge the control performance of proposed autonomous SSDNCI, a comparison is made between the autonomous SSDI, autonomous SSDNC and autonomous SSDNCI techniques for the control of an aluminum cantilever beam subjected to both single mode and multimode excitation. A value of negative capacitance slightly greater than the piezoelectric patch capacitance gave the optimum damping results. Experiment results confirmed the effectiveness of the proposed autonomous SSDNCI technique as compared to the previous techniques. Some limitations and drawbacks of the proposed technique are also discussed.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권2호
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• pp.63-68
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• 2005

Total 12 units of high power klystron-modulator systems as microwave source are under operation for 2.5 GeV electron linear accelerator in Pohang Light Source (PLS) linac. The klystron-modulator system has an important role for the stable operation to improve an availability statistics of overall system performance of klystron-modulator system. RF power and beam power of klystron are precisely measured for the effective control of electron beam. A precise measurement and measurement equipment with good response characteristics are demanded for this. Input power of klystron is calculated from the applied voltage and the current on its cathode. Tiny measurement error severely effects RF output power value of klystron. Therefore, special care is needed to measure precise beam voltage. Capacitive voltage divider (CVD), which divides input voltage as capacitance ratio, is intended for the measurement of a beam voltage of 400 kV generated from the klystron-modulator system. Main parameter to determine standard capacitance in the high arm of CVD is dielectric constant of insulation oil. Therefore CVD should be designed to have a minimum capacitance variation due to voltage, frequency and temperature in the measurement range. This paper will be present and discuss the design concept and analysis of capacitive voltage divider for a pulsed high-voltage measurement, and the empirical relations between capacitance effects and oil temperature variation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.241-241
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• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.

• Journal of Electrical Engineering and Technology
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• 제12권1호
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• pp.459-465
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• 2017

This paper describes a performance analysis of self-excited eddy current brake(SECB). Stator winding of SECB is connected by capacitor instead of voltage source, and SECB's braking force is generated by L-C resonance. SECB has wide range of driving and nonlinear inductance as well. Therefore, it is important to select capacitance based on the value of inductance. This paper discusses about the process of deciding capacitance and the change of resonance frequency based on the inductance change in each speed. Also the braking force was confirmed by the experimental model of SECB.

• 한국정밀공학회지
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• 제23권11호
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• pp.50-57
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• 2006

The water leak in water-cooled generator stator windings can generate the serious accidents such as insulation breakdown and it brings a generator to the unexpected sudden outage. Accordingly, it is important to diagnose the water absorption of them for the effective operation of power plant. Especially, the capacitance value which is measured for diagnosis is very small so the special diagnosis methods like stochastic theory are needed. KEPRI developed the water absorption test equipment and diagnosis technology for them. The developed diagnosis technology is applied to the real system and the results of water absorption test for stator windings are agreed to them of water leak test.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.703-706
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• 1998

This paper presents an efficient substrate-bias generator(SBG)for low-power, high-density DRAM's The proposed SBG can supply stable voltage with switching the supply voltage of driving circuit, and it can substitude the small capacitance for the large capacitance. The charge pumping circuit of the SBG suffere no VT loss and is to be applicable to low-voltage DRAM's. Also it can reduce the power consumption to make VBB because of it's high pumping efficiency. Using biasing voltage with positive temperature coefficient, VBB level detecting circuit can detect constant value of VBB against temperature variation. VBB level during VBB maintaining period varies 0.19% and the power dissipation during this period is 0.16mw. Charge pumping circuit can make VBB level up to -1.47V using VCC-1.5V, and do charge pumping operation one and half faster than the conventional ones. The temperature dependency of the VBB level detecting circuit is 0.34%. Therefore the proposed SBG is expected to supply a stable VBB with less power consumption when it is used in low power DRAM's.