• 전기학회논문지
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• 제59권6호
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• pp.1095-1102
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• 2010

This paper presents an equalizer reducing CCI(cell-to-cell interference) in MLC NAND flash memory. High growth of the flash memory market has been driven by two combined technological efforts that are an aggressive scaling technique which doubles the memory density every year and the introduction of MLC(multi level cell) technology. Therefore, the CCI is a critical factor which affects occurring data errors in cells. We introduced an equation of CCI model and designed an equalizer reducing CCI based on the proposed equation. In the model, we have been considered the floating gate capacitance coupling effect, the direct field effect, and programming methods of the MLC NAND flash memory. Also we design and verify the proposed equalizer using Matlab. As the simulation result, the error correction ratio of the equalizer shows about 20% under 20nm NAND process where the memory channel model has serious CCI.

• 한국재료학회지
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• 제26권9호
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• pp.460-467
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• 2016

Activated carbons (ACs) have been used as EDLC (electric double-layer capacitor) electrode materials due to their high specific area, stability, and ecological advantages. In order to prepare ACs with high density and crystallinity, coal tar pitch (CTP) was activated by $K_2CO_3$ and the textural and electrochemical properties of the obtained ACs were investigated. Although the CTP ACs formed by $K_2CO_3$ activation had much smaller specific surface area and pore volume than did the CTP ACs formed by KOH activation, their volumetric specific capacitance (F/cc) levels as electrode materials for EDLC were comparable due to their higher density and micro-crystallinity. Structural characterization and EDLC-electrode performance were studied with different activation conditions of $CTP/K_2CO_3$ ratio, activation temperature, and activation period.

• 대한한방부인과학회지
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• 제19권3호
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• pp.247-256
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• 2006

Purpose : To research the Skin Resistance Variability(SRV) of premature ovarian failure(POF) patients by Autonomic Bioelectric Response Recorder(ABR-2000 system, Meridian, Korea) and report the specific results in SRV of POF patients. Methods : We measured SRV of 17 POF Patients who came to Conmaul Oriental Medical Hospital during August 2005 ${\sim}$ July 2006 by ABR-2000 system. We analyzed the results which height of graph Part was converted into 0${\sim}$10, and the readings of Low/Normal/High. Results : The mean value of graph height on each(1, 2, 3) part is lower than normal range(4-6) in POF patients. The distribution ratio of Low/Normal/High on each(1, 2, 3) part shows that there are much more Low proportion in POF patients. Conclusion : The low graph height of POF patients on 1, 2, 3 part means that conductivity & capacitance of POF patients is low, especially on head.

• 대한전자공학회논문지SD
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• 제42권3호
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• pp.17-24
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• 2005

본 논문에서는 단일모드 광섬유를 부착한 analog용 PIN-Photodiode를 제작하고 소자의 특성을 분석하였다. 제작된 analog 용 PIN-photodiode의 대역폭은 1.5 GHz이였으며, 암전류는 20 pA이고, 정전용량은 0.48 pF이였으며, 응답도(responsivity)는 0.9 V/W 이고, 2차 상호변조(IM2, second order distortion)는 -72 dBc이였다. 본 논문에서는 응답도와 IM2 특성을 실시간으로 모니터링하며 정렬하는 새로운 광 패키징 기술을 개발하였다. 그 결과 응답도는 0.03 V/W 향상되었으며, IM2는 $3\~5dBc$ 향상 되었고, 부적합 발생률도 $3.5\%$ 감소하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권11호
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• pp.526-530
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The composition of SCT thin film deposited on Si substrate at room temperature is close to stoichiometry(1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by ammealing at $600^{\cric}C$. The temperature dependence of dielectric loss showed a value within 0.02 in temperature ranges of -80 ${\sim}$ +90$^{\circ}C$. The capacitance characteristics showed a stable value within ${\pm}$4%. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films was observed at the frequency above 200kHz.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1582-1584
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• 1996

The polycrystalline silicon thin film transistors (poly-Si TFT) are the most promising candidate for active matrix liquid crystal displays (AMLCD) for their high mobilities and current driving capabilities. The leakage current of the poly-Si TFT is much higher than that of the amorphous-Si TFT, thus larger storage capacitance is required which reduces the aperture ratio fur the pixel. The offset gated poly-Si TFTs have been widely investigated in order to reduce the leakage current. The conventional method for fabricating an offset device may require additional mask and photolithography process step, which is inapplicable for self-aligned source/drain ion implantation and rather cost inefficient. Due to mis-alignment, offset devices show asymmetric transfer characteristics as the source and drain are switched. We have proposed and fabricated a new offset poly-Si TFT by applying photoresist reflow process. The new method does not require an additional mask step and self-aligned ion implantation is applied, thus precise offset length can be defined and source/drain symmetric transfer characteristics are achieved.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 추계종합학술대회
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• pp.442-445
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• 2003

본 연구에서는 엑시머 레이저 여기용으로 40 J급 자기펄스압축시스템(WC : magnetic pulse compression system)을 개발하고, MPC의 각단에서 최적조건을 구하였다. MPC 시스템은 DC 전원 공급기, 펄스 트랜스, 네 단의 포화인덕터로 이루어져 있다. MPC 각 단에서 포화인덕터의 회전수는 140회, 26회, 5회와 1회이며, 각단에서의 최적 용량는 각각 34 nF, 28.9 nF, 22.1 nF, 22.1 nF이다. MPC 시스템의 개선으로 우리는 43 kV의 전압, 8.25 kA의 전류와 360 ns의 펄스폭을 얻을 수 있었으며, 이때 최대 펄스 압축율은 77.7, 전류 이득은 71.7이었다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2006년도 전력전자학술대회 논문집
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• pp.403-405
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• 2006

Over the years, plasma display panel (PDP) manufacturers have impressed the flat panel display industry with yet another new product essentially having the merits of a larger screen size. Since larger size implies higher power ratings, voltage/current ratings of the power devices used have become a rising concern. Another important concern is the brightness of PDP, one way of increasing which is by operating the PDP at higher frequencies. In order to address the above issues, a transformer coupled sustain-driver for AC-PDP is proposed During the transition time, the two windings of the transformer greatly boost up the displacement current flowing through the panel capacitance and hence enable a fast inversion of the voltage polarity with practical values of resonant inductance. In the proposed topology, the resonant inductance can be increased by a factor of $(n+1)^2$ as compared to prior approaches. Increased inductance results in lower current stresses. Moreover, high frequency operation is possible by using higher value of n (turn ratio of the transformer). The operational principle and design procedure of the proposed circuit are presented with theoretical analysis. The validity of the proposed sustain driver is established through simulation and experimental results using a 42-in PDP

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.563-566
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• 2002

We investigated to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with $SiH_4$, $N_2$ gases. To prove the influence of the $N_2$ plasma treatment, the Si substrate was exposed to the plasma, which was generated in Ne gas ambient. Without plasma treatment SiNx film grow at the rate of 7. 03 nm/min, has a refractive index n = 1.77 and hydrogen content of $2.16{\times}10^{22}cm^{-3}$ for $N_2/SiH_4$ gas flow ratio of 20. The obtained films were analyzed in terms of deposition rates, refractive index, hydrogen concentration, and electrical properties. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) disappeared. We observed plasma treated sample were decreased the leakage current density reduces by 2 orders with respect to the sample having no plasma treatment.

• Journal of Information Display
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• 제11권3호
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• pp.109-112
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• 2010

The solid phase compositions and dielectric properties of silicon nitride ($SiN_x$) films prepared using the plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature ($200^{\circ}C$) were studied. Controlling the source gas mixing ratio, R = $[N_2]/[SiH_4]$, and the plasma power successfully produced both silicon-rich and nitrogen-rich compositions in the final films. The composition parameter, X, varied from 0.83 to 1.62. Depending on the film composition, the dielectric properties of the $SiN_x$ films also varied substantially. Silicon-rich silicon nitride (SRSN) films were obtained at a low plasma power and a low R. The photoluminescence (PL) spectra of these films revealed the existence of nano-sized silicon particles even in the absence of a post-annealing process. Nitrogen-rich silicon nitride (NRSN) films were obtained at a high plasma power and a high R. These films showed a fairly high dielectric constant ($\kappa$ = 7.1) and a suppressed hysteresis window in their capacitance-voltage (C-V) characteristics.