• ETRI Journal
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• v.32 no.4
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• pp.520-529
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• 2010

In this paper, we present a low-voltage low-dropout voltage regulator (LDO) for a system-on-chip (SoC) application which, exploiting the multiplication of the Miller effect through the use of a current amplifier, is frequency compensated up to 1-nF capacitive load. The topology and the strategy adopted to design the LDO and the related compensation frequency network are described in detail. The LDO works with a supply voltage as low as 1.2 V and provides a maximum load current of 50 mA with a drop-out voltage of 200 mV: the total integrated compensation capacitance is about 40 pF. Measurement results as well as comparison with other SoC LDOs demonstrate the advantage of the proposed topology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.137-140
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• 2003

Cu+ ions drift diffusion in different dielectric materials is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 1.lMV/cm and temperature $200^{\circ}C$, $250^{\circ}C$, $300^{\circ}C$ for 1H, 2H, 5H. The Cu+ ions drift rate of polyimide$(2.8{\leq}k{\leq}3.2)$ is considerably lower than thermal oxide. Also Cu+ drift rate of polyimide is similar to PECVD oxide. But, polyimide film is even more resistant to Cu drift diffusion and thermal effect than Thermal oxide, PECVD oxide: This results got a comparative reference. The important conclusion is that polyimide film is strongly dielectric material by thermal effect and Cu drift diffusion.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.107-111
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• 2022

In this paper, a plastic film type submersion sensor capable of measuring submersion speed was developed. This submersion sensor is designed as a capacitive type, and it is a sensor that outputs the change in capacitance between the electrode of the submersion sensor and the grounded body as a voltage through a C-V(capacitance-voltage) converter. We developed an submersion sensor in which two electrodes of different lengths are connected in parallel to measure the submersion speed accurately by minimizing the influence of noise such as contamination. When both electrodes of the submersion sensor are exposed to water, the rate of change of water level suddenly increases, so the submersion speed is measured by measuring the time to this point. Since the difference in length between the two electrodes of the submersion sensor does not change in any case, it is possible to accurately measure the submersion speed.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1402-1404
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• 2009

The silicon nitride films for gate dielectric were deposited by catalytic chemical vapor deposition at low temperature (${\leq}200^{\circ}C$). The mixture of $SiH_4$, $NH_3$ and $H_2$ was used as source gases. The current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the films were measured. The breakdown voltage and the flat band voltage shift of samples were improved by increase of the $NH_3$ contents and $H_2$ dilution ratio. The defect states were analyzed by photoluminescence (PL) spectra. As the defect states decreased, the breakdown voltage and the flat band voltage shift increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.895-900
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• 2000

In this paper, C-V characteristics based on the structure of GaAs MESFET’s has been proposed with wide range of applied voltages and temperatures. Small signal capacitance; gate-source and gate-drain capacitances are represented by analytical expressions which are classified into two different regions; linear and saturation regions with bias voltages. The expression contains two variables; the built-in voltage( $V_{vi}$ )and the depletion width(W). Submicron gate length MESFETs has been selected to prove the validity of the theoretical perdiction and shows good agreement with the experimental data over the wide range of applied voltages.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.7
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• pp.1229-1234
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• 2008

In this work, ultra high-voltage (17 - 50 kV AC), reliable 80 pF mica capacitors for partial discharge system application were investigated. Mica was used as the dielectric of the capacitors. Using the conservative design rule, over 3 individual $50\;{\mu}m$ thick mica sheets with a size of 30mm{\times}35mm were used with lead foils to form a parallel capacitor element and 20 mica sheets were interleaved with lead foils to form a series stack of parallel capacitor element to meet the requirements of the capacitors. The dimensions of the fabricated 80 pF capacitors for 17 kV AC and 50 kV AC were $90\;mm{\times}90\;mm$ and $95\;mm{\times}180\;mm$, respectively. The high-frequency characteristics of the capacitance (C) and dissipation factor (D) of the developed capacitors were measured using a capacitance meter. The developed capacitors exhibited C of 79.5 - 87.5 pF, had D of 0.001% over the frequency ranges of 150 kHz to 50 MHz, had a self-resonant frequency of 65 MHz, and showed results comparable to those measured for the capacitors prepared recently by $Adwel^{Tm}$. The developed capacitors also showed excellent characteristics for thermal shock test and temperature cycling test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.84-87
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• 2003

Carbon nitride ($CN_x$) films were prepared by reactive RF magnetron sputtering system with DC bias at various deposition conditions and the electrical properties were investigated. The films were characterized by fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The metal-insulator-semiconductor (MIS) capacitor which has $Al/CN_x/Si$ structure was designed and fabricated to investigate the capacitance-voltage (C-V) characteristics. Dielectric constant of carbon nitride films is very small.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.9
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• pp.62-71
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• 2002

An intergral C-V converter is proposed to solve the nonlinearity problem of capacitive pressure sensors. The integral C-V converter consists of a switched-capacitor integrator and a switched-capacitor differential amplifier. It converts the sensor capacitance change which is inversely proportional to an applied pressure into a linear voltage output. Various PSPICE simulations prove that the convertor has excellent characteristics, such as low nonlinearity less than 0.01%/FS and low sensitivity to parallel offset capacitance and parasitic capacitance for the displacement range of sensor diaphragm set to 0 ${\sim}$ 90% of the initial distance between the electrodes in the simulation. We also show that the offset compensation and the gain trimming are easily achieved with the integral C-V converter.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.230-234
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• 2002

Metal-ferroelectric-semiconductor(MFS) capacitors by using rapid thermal annealed $LiNbO_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS capacitors. The C-V characteristics of MFS capacitors showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3$thin film. The dielectric constant of the $LiNbO_3$film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 25. The gate leakage current density of MFS capacitor using a platinum electrode showed the least value of $1{\times}10^{-8}\textrm{A/cm}^2$ order at the electric field of 500 kV/cm. The minimum interface trap density around midgap was estimated to be about $10^{11}/cm^2$.eV. The typical measured remnant polarization(2Pr) value was about 1.2 $\mu\textrm{C/cm}^2$, in an applied electric field of $\pm$ 300 kv/cm. The ferroelectric capacitors showed no polarization degradation up to about $10^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse in the 500 kHz.