Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Capacitance - Voltage Characteristics of MIS Capacitors Using Carbon Nitride Films

질화탄소막을 이용한 MIS 캐패시터의 정전용량 - 전압 특성

  • Ha, Se-Geun (Department of Electrical and Electronic Engineering, Kyungnam University) ;
  • Lee, Ji-Gong (Department of Electrical and Electronic Engineering, Kyungnam University) ;
  • Lee, Sung-Pil (Department of Electrical and Electronic Engineering, Kyungnam University)
  • 하세근 (경남대학교 전기전자공학부) ;
  • 이지공 (경남대학교 전기전자공학부) ;
  • 이성필 (경남대학교 전기전자공학부)
  • Published : 2003.11.13
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Abstract

Carbon nitride ($CN_x$) films were prepared by reactive RF magnetron sputtering system with DC bias at various deposition conditions and the electrical properties were investigated. The films were characterized by fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The metal-insulator-semiconductor (MIS) capacitor which has $Al/CN_x/Si$ structure was designed and fabricated to investigate the capacitance-voltage (C-V) characteristics. Dielectric constant of carbon nitride films is very small.

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