• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.737-740
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• 2009

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics, In this paper, we demonstrated that the switching performance of DMOSFETs are dependent on the with Channel length ($L_{channel}$) and Current Spreading Layer thickness ($T_{CSL}$) by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the JFET region, CSL, and epilayer. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimizatin of superior switching performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.45-46
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• 2009

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with thin (${\approx}10\;nm$) Inductive-Coupled Plasma (ICP) CVD $Si_xN_y$ dielectric layers and investigated electrical properties of nitrided $SiO_2$/4H-SiC interface after oxidizing the $Si_xN_y$ in dry oxidation and/or $N_2$ annealing. An improvement of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements if compared with non-annealed oxidized-SiN. The improvements of SiC MOS capacitors formed by oxidized-SiN have been explained in this paper.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1677-1679
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• 1999

Crosslinked LB films of p-HP (p-hexadecoxyphenol) were produced to insulation layers of electronic devices. The fabrication and the electrical properties of LB films according to crosslinking have investigated respectively to Brewster angle microscopy (BAM), Scanning Maxwell-stress microscopy (SMM), current-voltage (I-V) properties and frequency-capacitance (C-F) characteristics. According to crosslinking, conductivity of p-HP LB films have improved and relative dielectric constant have reduced.

• ETRI Journal
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• v.15 no.2
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• pp.11-25
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• 1993

Interface trap densities at gate oxide/silicon substrate ($SiO_2/Si$) interfaces of metal oxide semiconductor field-effect transistors (MOSFETs) were determined from the substrate bias dependence of the subthreshold slope measurement. This method enables the characterization of interface traps residing in the energy level between the midgap and that corresponding to the strong inversion of small size MOSFET. In consequence of the high accuracy of this method, the energy dependence of the interface trap density can be accurately determined. The application of this technique to a MOSFET showed good agreement with the result obtained through the high-frequency/quasi-static capacitance-voltage (C-V) technique for a MOS capacitor. Furthermore, the effective substrate dopant concentration obtained through this technique also showed good agreement with the result obtained through the body effect measurement.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1126-1128
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• 1995

In order to investigate the electrical properties for transformer oils due to electron bean irradition, the dielectric properties was made researches by dose of irradition To measure the dielectric loss of irradiated specimen, coaxial cylindrical liquid electrode was used, geometric capacitance was confirmed to 16[pF]. Experiments for measuring the dielectric loss were performed at $20{\sim}120[^{\circ}C]$ in temperature range, $30{\sim}1.5{\times}10^5$[Hz] in frequency range and $300{\sim}1500$[mV] in voltage range and then, the result of experiment for the movement of carrier and the physical constants to contribute dielectric properties of specimen due to electron beam irradiation introduced.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.32 no.7
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• pp.234-238
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• 1983

This paper presents a steady-state computer solution of one-dimensional transport equations, describing a double(metal-semiconductor-metal) contact device, involving only one type of charge carrier. Most of the assumptions and approximations which are ordinarily introduced in order to make the transport equations analytically soluble are avoided here. The results are presented mainly in the form of(a) energy contours (b) concentration contours and (c) I-V characteristics. A computation of differential system capacitance as a function of applied voltage is also presented and schematic corrections are introduced for image force effects.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.94-99
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• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.93-94
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• 2006

나노급 CMOS 기술에서 high-k 물질을 이용하여 게이트 유전막을 형성하고자 하는 연구가 활발히 진행되고 있다. 본 논문에서는 high-k 물질인 $TiO_2$의 특성에 대한 연구를 수행하였다. $TiO_2$를 APCVD법으로 p-type 실리콘 기판에 $50{\AA}{\sim}300{\AA}$ 두께로 증착하였고, evaporator를 이용하여 $TiO_2$ 박막위에 Al을 증착하여 MIS소자를 제작하였다. 두께를 가변 하여 Capacitance-Voltage (C-V) 특성을 측정, 분석하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.844-846
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• 2008

A new p-type conjugated copolymer, poly(9,10-diethynylanthracene-alt-9,9-didodecylfluorene (PDADF) was synthesized through a Sonogashira coupling reaction. A solution-processed thin film transistor device showed a carrier mobility value of $6.0\;{\times}\;10^{-4}\;cm^2/Vs$ with a threshold voltage of -17 V and a capacitance ($C_i$) of $10\;nF/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.206-210
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• 1996

In order to investigate the electrical properties for transformer oils which contains a Pure sodium chloride, the dielectric properties is made researches. To measure the dielectric loss of specimen, a coaxial cylindrical liquid electrode is used, and its geometric capacitance is confirmed to 16[pF]. And the dielectric dissipation factor, tan$\delta$, is measured by using the Video Bridge 2150. The thermal static oven with an automatically static temperature controller is used so as to support specific temperature to the specimen. This experiments for measuring the dielectric lass is performed at 20-120[$^{\circ}C$] in the temperature range, 30∼1.5x10$\^$5/[Hz] in the frequency range and 300∼1500[mV] in the voltage range. The result of experiment for the movement of carrier and the physical constants to contribute dielectric properties of specimen with a pure sodium chloride.