Mixed-mode Simulation of Switching Characteristics of SiC DMOSFETs
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Kang, Min-Seok
(광운대학교 전자재료공학과)
Choi, Chang-Yong (광운대학교 전자재료공학과) Bang, Wook (한국전기연구원 에너지반도체연구센터) Kim, Sang-Chul (한국전기연구원 에너지반도체연구센터) Kim, Nam-Kyun (한국전기연구원 에너지반도체연구센터) Koo, Sang-Mo (광운대학교 전자재료공학과) |
1 | S.-H. Ryu, A. Agarwal, J. Richmond, J. Palmour, N. Saks, and J. Williams, '10 A, 2.4 kV power DiMOSFETs in 4H-SiC', IEEE Electron Device Letters, Vol. 23, No. 6, p. 321, 2002 DOI ScienceOn |
2 | A. Saha and James A. Cooper, 'A 1-kV 4H- SiC power DMOSFET optimized for low on-resistance', IEEE Trans. Electron Devices, Vol. 54, No. 10, p. 2786, 2007 DOI ScienceOn |
3 | K. Matocha, 'Challenges in SiC power MOSFET design', Solid-State Electronics, Vol. 52, No. 6, p. 1631, 2008 DOI ScienceOn |
4 |
S. Inaba, T. Mizuno, M. Iwase, M. Takahashi, H. Niiyama, H. Hazama, M. Yoshimi, and A. Toriumi, 'Inverter performance of 0.10 |
5 | T. Tamaki, Ginger G. Walden, Y. Sui, and James A. Cooper, 'Optimization of on-state and switching performances for 15–20-kV 4H-SiC IGBTs', IEEE Trans. Electron Devices, Vol. 55, No. 8, p. 1920, 2008 DOI ScienceOn |
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