Browse > Article
http://dx.doi.org/10.4313/JKEM.2009.22.9.737

Mixed-mode Simulation of Switching Characteristics of SiC DMOSFETs  

Kang, Min-Seok (광운대학교 전자재료공학과)
Choi, Chang-Yong (광운대학교 전자재료공학과)
Bang, Wook (한국전기연구원 에너지반도체연구센터)
Kim, Sang-Chul (한국전기연구원 에너지반도체연구센터)
Kim, Nam-Kyun (한국전기연구원 에너지반도체연구센터)
Koo, Sang-Mo (광운대학교 전자재료공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.9, 2009 , pp. 737-740 More about this Journal
Abstract
SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics, In this paper, we demonstrated that the switching performance of DMOSFETs are dependent on the with Channel length ($L_{channel}$) and Current Spreading Layer thickness ($T_{CSL}$) by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the JFET region, CSL, and epilayer. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimizatin of superior switching performance.
Keywords
Silicon carbide; Switching; 4H-SiC; DMOSFET; Transient;
Citations & Related Records
연도 인용수 순위
  • Reference
1 S.-H. Ryu, A. Agarwal, J. Richmond, J. Palmour, N. Saks, and J. Williams, '10 A, 2.4 kV power DiMOSFETs in 4H-SiC', IEEE Electron Device Letters, Vol. 23, No. 6, p. 321, 2002   DOI   ScienceOn
2 A. Saha and James A. Cooper, 'A 1-kV 4H- SiC power DMOSFET optimized for low on-resistance', IEEE Trans. Electron Devices, Vol. 54, No. 10, p. 2786, 2007   DOI   ScienceOn
3 K. Matocha, 'Challenges in SiC power MOSFET design', Solid-State Electronics, Vol. 52, No. 6, p. 1631, 2008   DOI   ScienceOn
4 S. Inaba, T. Mizuno, M. Iwase, M. Takahashi, H. Niiyama, H. Hazama, M. Yoshimi, and A. Toriumi, 'Inverter performance of 0.10 $\mu$m CMOS operating at room temperature', IEEE Trans. Electron Devices, Vol. 41, No. 12, p. 2399, 1994   DOI   ScienceOn
5 T. Tamaki, Ginger G. Walden, Y. Sui, and James A. Cooper, 'Optimization of on-state and switching performances for 15–20-kV 4H-SiC IGBTs', IEEE Trans. Electron Devices, Vol. 55, No. 8, p. 1920, 2008   DOI   ScienceOn