• International Journal of Concrete Structures and Materials
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• v.9 no.1
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• pp.119-132
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• 2015

Electrical resistivity is an important physical property of portland cement concrete which is directly related to chloride induced corrosion process. This study examined the electrical surface resistivity (SR) and bulk electrical resistivity (BR) of concrete cylinders for various binary and ternary based high-performance concrete (HPC) mixtures from 7 to 161 days. Two different types of instruments were utilized for this investigation and they were 4 point Wenner probe meter for SR and Merlin conductivity tester for bulk resistivity measurements. Chronological development of electrical resistivity as well as correlation between two types of resistivity on several days was established for all concrete mixtures. The ratio of experimental surface resistance to bulk resistance and corresponding resistivity was computed and compared with theoretical values. Results depicted that bulk and SR are well correlated for different groups of HPC mixtures and these mixtures have attained higher range of electrical resistivity for both types of measurements. In addition, this study presents distribution of surface and bulk resistivity in different permeability classes as proposed by Florida Department of Transportation (FDOT) specification from 7 to 161 days. Furthermore, electrical resistivity data for several HPC mixtures and testing procedure provide multiple promising options for long lasting bridge decks against chloride induced corrosion due to its ease of implementation, repeatability, non-destructive nature, and low cost.

• Korean Journal of Materials Research
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• v.31 no.2
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• pp.108-114
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• 2021

In the manufacturing of bulk graphite, pores produced by vaporization and discharge of volatile materials in binders during carbonization reduce the density of bulk graphite, which adversely affects the electrical conductivity, strength and mechanical properties. Therefore, an impregnation process is introduced to fill the pores and increase the density of bulk graphite. In this study, bulk graphite is prepared by varying the viscosity of the impregnant. The microstructure of bulk graphite is observed. The flexural strength and electrical resistivity are measured. As the viscosity of the impregnants decreases and the number of impregnations increases, it is shown that the number of pores decreases. The density before impregnation is 1.62 g/㎤. The density increases to 1.67 g/㎤ and porosity decreases by 18.6 % after three impregnations using 5.1 cP impregnant, resulting in the best pore-filling effect. After three times of impregnation with a viscosity of 5.1 cP, the flexural strength increases by 55.2 % and the electrical resistivity decreases by 86.76 %. This shows that a slight increase in density due to the pore-filling effect improves the properties of bulk graphite.

• Geophysics and Geophysical Exploration
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• v.12 no.4
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• pp.328-337
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• 2009

To investigate the relation between pore fluid conductivity and bulk resistivity of a rock sample it is assumed that electrolyte solution perfectly substitute the pore fluid that occupied the pore space within the sample in general. In this study, it is investigated that how much can the electrolyte solution substitute the pore fluid by repeating the same saturation process. Four kinds of NaCl solutions of 8, 160, 3200, 64000 ${\mu}S$/cm are used. The saturation process has repeated four times for each electrolyte in increasing conductivity order first then four times each in decreasing order. The more the saturation process repeated with the same electrolyte, the more electrolyte solution substitute the pore fluid. Geometric mean of bulk resistivity in increasing and decreasing orders with the same electrolyte solution is assumed to be mostly close to the bulk resistivity with perfect substitution. Bulk resistivity measurements for both increasing and decreasing order differs within 10% to the geometric mean when repeating the saturation process 4 times while maximum 40% difference is observed when single saturation process for each electrolyte solution with increasing order. The modified parallel resistant model can generally represent the relations between pore fluid resistivity and bulk resistivity in the experiment, but more experimental data with various rock samples with different porosity is needed to generalize the model.

• Journal of the Semiconductor & Display Technology
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• v.11 no.3
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• pp.63-67
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• 2012

The films were deposited at evaporator system and were annealed at heat treatment. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. Samples Preparation were analyzed in term of positive temperature coefficient of Resistivity Samples were made in the substrate tempera-true of $400^{\circ}C$ deposition time of 10 hours, and forward power of 210watt. R-T(resistivity-temperature) Characteristics of the samples were investigated as a function of the substrate type and the ambient temperature. The resistivity of the thin film specimens was compared with that of the bulk type specimens. By using RF/DC magnetron sputtering system, we obtained lower resistivity in the thermistor with thin $BaTiO_3$ film than that in the bulk type thermistor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.17-20
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• 1994

PTCRl(positive temperature coefficient of resistivity) thermistors in the thin file BaTiO$_3$ system were deposited by radio frequency (13.56 MHz) and dc radio frequency (13.56MHz) and dc magnerton sputter equipment. R-T(resistivity -temperature) properties was investigated as a function of substrate and the temperature variation. The specimens make a comperison between the thin films and the bulk in the resistivity variation. Substrate temperature. deposition time. and forward power are deposited at the 400$^{\circ}C$, 10 hours, and 210 watt. respectively. The aim of this work is to obtain lower than bulk specimen resistivity in thin films BaTiO$_3$ system thermistor by RF/DC magnetron sputter equipment.

• The Journal of the Acoustical Society of Korea
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• v.25 no.2E
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• pp.49-55
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• 2006

Compressional wave velocity (Vp), shear wave velocity (Vs), elastic and physical properties, and electrical resistivity for two core sediments obtained from Southeastern Yellow Sea Mud (SEYSM) were measured and computed. The sediments consist of homogeneous mud (mostly silt and clay) with shells and shell fragments. As a result, the mean grain size is uniform ($7.5-8.5{\Phi}$ throughout the core sediments. However, physical properties such as wet bulk density and porosity show slightly increasing and decreasing patterns with depth, compared to the mean grain size. The compressional (about 1475 m/s in average) and shear wave (about 60 m/s in average) velocities with depth accurately reflect the pattern of wet bulk density and porosity. Electrical resistivity is more closely correlated with compressional wave velocity than physical properties. The computed Vp/Vs and Poisson's ratios are relatively higher (more than 10) and lower (approximately 0.002) than Hamilton's (1979) data, respectively, suggesting the typical characteristics of soft and fully water-saturated marine sediments. Thus, the Vp/Vs ratio in soft and unconsolidated sediments is not likely sufficient to examine lithology and sediment properties. Relationships between the elastic constant and physical properties are correlated well. The elastic constants (Poisson's ratio, bulk modulus, shear modulus) given in this paper can be used to characterize soft marine sediments saturated with seawater.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.911-917
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• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.12-17
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• 2004

The body-tied FinFETs (bulk FinFETs) implemented on bulk Si substrate were characterized through 3-dimensional device simulation. By controlling the doping profile along the vertical fin body, the bulk FinFETs can be scaled down to sub-30 nm. Device characteristics with the body shape were also shown. At a contact resistivity of $1{\times}10^{-7}\;{\Omega}\;cm^2$, the device with side metal contact of fin source/drain showed higher drain current by about two. The C-V results were also shown for the first time.

• Transactions of the Korean hydrogen and new energy society
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• v.6 no.1
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• pp.17-22
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• 1995

Thermally evaporated Pd films on substrate were hydrogenated upto 1 bar of hydrogen gas at room temperature. Temperature dependence hange of electrical resistivity on Pd films is examined in the thickness range between $60{\AA}$ and $990{\AA}$. Resistivity of Pd is fitted well with Bloch-$Gr{\ddot{u}}neisen$ formula. Debye temperatures of Pd films are about 254 K, which are 20 K lower than that of bulk Pd. Debye temperature is not sensitive to film thickness change. Temperature of substrate during evaporation changes temperature dependence of resistivity of films much. Optical phonon contribution increases with decreasing temperature of PdHx.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.422-423
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• 1993

In this short note, we report the result of measurement for the ferro- to paramagnetic phase transition temperature, that is Curie point of bulk gadolinium. This note is written to give the solid validity for the previous measurement of Curie point shift of gadolinium film (1. Rhee, E. Lee and S. Lee, Kor. J. of Mat. Research,3, 3, 1993). The Curie point of bulk gadolinium is determined by measuring the resistance of sample as function of temperatures. At Curie point, we can observe the resistivity anomaly which arises due to the heat capacity difference between below and above Curie point. Finally, the curie point of bulk gadolinium is found to be 19.2${\pm}$0.$3^{\circ}C$.