1 |
Anderson, W.A.,"Effect of Barrier Layer on Thin Film Capacitors on Si Substrates". J. Elec. Mat., 23(1), pp. 53-56, 1994
DOI
ScienceOn
|
2 |
Shintani,Y, "Behaviors of High-Energy Electrons and Neutral Atom in the Sputtering of ", Jpn. J. Appl. Phy, 14(12), pp. 1875-1879,1975
DOI
|
3 |
Felderman, C."Formation of Thin Films of by Evaporation", Rev. Sci. Instrum., 12(6), pp. 463- 466 1955.
|
4 |
Dervies, R.C,"On the Preparation of the Single-Crystal Films of ", J. Am. Ceramic. Soc., 45, pp. 225- 228, 1962
DOI
|
5 |
Shintani, Y. "Preparation of the Films by DC Diode Sputtering", J. Appl. Phys, 14, pp. 2376- 2380 1970
|
6 |
Nagatomo, T.,"Fabrication of Films by Planar Magnetron Sputtering", Ferroelectrics, 37, pp.681- 684 1981
DOI
ScienceOn
|
7 |
D.j.Qui, P.Yua., and H.Z. Wu, Solid State Commun, 134, 735, 2005
DOI
ScienceOn
|
8 |
Anderson, W.A.,"Electricaland Dielectric Properties of Thin Film Capacitors Deposited by Ratio Frequency Magnetron Sputtering". J. Vac. Sci. Technal.,A10(4), pp. 733-736, 1992
|