• 한국전산구조공학회논문집
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• 제33권3호
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• pp.187-192
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• 2020

덤프 트럭 데크의 경량화를 통한 연료 소비를 줄이고 에코 친화적인 설계를 위해서는 정확한 구조 분석이 필요하다. 지금까지 데크의 하중은 정수압 또는 토압 이론을 기반으로 계산되었다. 이 방법으로 데크의 하중 불균일을 계산할 수 없다. 하중 분포는 골재 입자의 크기 분포 및 상호 작용에 따라 달라진다. 이산요소법은 유한요소법보다 효과적으로 골재의 거동을 시뮬레이션할 수 있다. 본 논문에서는 벌크 밀도와 안식각을 측정하여 주요 특성을 얻었다. 15톤 덤프 트럭 데크는 범핑, 브레이킹 및 회전 시의 운동 조건을 적용하여 얻은 하중을 사용했다. 시뮬레이션은 이산요소해석 소프트웨어인 EDEM을 사용했다. 데크의 응력 및 변형 분포는 NASTRAN에 의해 계산되었다. 측정된 값과 비교하였고, 이를 통해 DEM 시뮬레이션의 결과는 수학적 가정에 의한 결과보다 정확함을 확인하였다.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.77-81
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• 1992

The purpose of this research was th evaluate conductivity of electricity of Ge-Se-Bi system Chalcogenide glass as a amorphous semiconductor by observing its dissolution and crystallization. In this experiment. Ge-Se-Bi metal powder in the rage of $Ge_{12-25}$, $Se_{65-85}$, $Bi_{2.5-15}$ was used as the sample ore. The ore was. put into a vaccous quartz tube and then melted. The condition of heat treatment was to dispose it to $1000^{\circ}C$ heat for 10 hours and then rapidly quenched it at $3834^{\circ}C$/see. The crystallization of the fused sample ripened as the change of temperature and time, after the crystal core was formell. At that time it was possible to observe the state that $Bi_2Se_3$ and $GeSe_2$ were crystallized. In the experiment of making memberance, the memberance was produced by using the previously experimented bulk sample. And decrystalization was well progressed when Ge was over 15 at %, Se was over 70 at %, and Bi was under 10 at%. As for bulk. when Ge was fixed to 20 at %, the conducting of electricity was increased as Bi gained at %. In the case of memberance, the conductivity was much more increased than that of bulk sample as the increase of at the increase of at % of Bi. In the experiment on $Ge_{20}$, $Se_{77.5}$ and $Bi_{2.5}$, the crystallization sswas most vigorous when they were kept at $330^{\circ}C$ for 4 hours.

• 한국전기전자재료학회논문지
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• 제15권9호
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• pp.783-787
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• 2002

In recent year, B $i_{4-}$x L $a_{x}$ $Ti_3$ $O_{12(BLT)}$ is one of promising substitute materials for the ferroelectric random access memory(FRAM) applications. But the systematic composition is still insufficient, so this experiment was carried out in ceramic ambient sintering process which has the very excellent ferroelectric property. Samples were prepared by a bulk and the purpose which was estimated with a suitability of thin films applications. The density of B $i_{3.75}$ L $a_{0.25}$ $Ti_3$ $O_{12}$ was high and the XRD pattern showed that the intensity of main peak (117) was increased at the argon ambient sintering. Controlling the quantity of oxygen, crystallization showed a thin, long plate like type, and we obtained the excellent dielectric and polarization properties at the argon atmosphere sintering. Also this sintering process was effective at the bulk sample. Argon ambient sintered sample produced higher permittivity of 154, the remanent polarization(2Pr) of 6.8 uC/$\textrm{cm}^2$ compared with that sintered in air and oxygen ambient. And this sintering process showed a possibility which could be applied to thin films process..

• Structural Engineering and Mechanics
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• 제44권4호
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• pp.431-448
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• 2012

In this paper, the first-order shear deformation theory (FSDT) (Mindlin) for continuum incorporating surface energy is exploited to study the static behavior of ultra-thin functionally graded (FG) plates. The size-dependent mechanical response is very important while the plate thickness reduces to micro/nano scales. Bulk stresses on the surfaces are required to satisfy the surface balance conditions involving surface stresses. Unlike the classical continuum plate models, the bulk transverse normal stress is preserved here. By incorporating the surface energies into the principle of minimum potential energy, a series of continuum governing differential equations which include intrinsic length scales are derived. The modifications over the classical continuum stiffness are also obtained. To illustrate the application of the theory, simply supported micro/nano scaled rectangular films subjected to a transverse mechanical load are investigated. Numerical examples are presented to present the effects of surface energies on the behavior of functionally graded (FG) film, whose effective elastic moduli of its bulk material are represented by the simple power law. The proposed model is then used for a comparison between the continuum analysis of FG ultra-thin plates with and without incorporating surface effects. Also, the transverse shear strain effect is studied by a comparison between the FG plate behavior based on Kirchhoff and Mindlin assumptions. In our analysis the residual surface tension under unstrained conditions and the surface Lame constants are expected to be the same for the upper and lower surfaces of the FG plate. The proposed model is verified by previous work.

• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• 한국전기전자재료학회논문지
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• 제36권2호
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• pp.143-150
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• 2023

Underwater wireless communication is a challenging issue for realizing the smart aqua-farm and various marine activities for exploring the ocean and environmental monitoring. In comparison to acoustic and radio frequency technologies, the visible light communication is the most promising method to transmit data with a higher speed in complex underwater environments. To send data at a speedier rate, high-performance photodetectors are essentially required to receive blue and/or cyan-blue light that are transmitted from the light sources in a light-fidelity (Li-Fi) system. Here, we fabricated high-performance organic phototransistors (OPTs) based on P-type donor polymer (PTO2) and N-type acceptor small molecule (IT-4F) blend semiconductors. Bulk-heterojunction (BHJ) PTO2:IT-4F photo-active layer has a broad absorption spectrum in the range of 450~550 nm wavelength. Solution-processed OPTs showed a high photo-responsivity >1,000 mA/W, a large photo-sensitivity >10³, a fast response time, and reproducible light-On/Off switching characteristics even under a weak incident light. BHJ organic semiconductors absorbed photons and generated excitons, and efficiently dissociated to electron and hole carriers at the donor-acceptor interface. Printed and flexible OPTs can be widely used as Li-Fi receivers and image sensors for underwater communication and underwater internet of things (UIoTs).

• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.223-226
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• 2008

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.228-233
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• 2007

Core technologies for integrating hydrogen gas sensor were investigated. In this study, the thermally isolated micro-hot-plate with areas of $100{\times}100-260{\times}260{\mu}m^2$ was fabricated by utilizing surface micromachining technique that provides better manufacturing yield than bulk micromachining counterpart. The optimum design of the sensor was peformed by analyzing the thermal profile of the structure obtained from a ANSYS simulator. The 400-nm-thick polysilicon films doped with phosphorus, the 300-nm-thick aluminum films, and the 200-nm-thick $SnO_2$(or ZnO)films were used as the micro-heater material, the temperature sensor material, and the gas sensitive material, respectively. The experimental results show that the developed gas sensors can detect $H_2$ concentration as low as 1 ppm.

• 소성∙가공
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• 제11권5호
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• pp.430-438
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• 2002

This paper suggests the new technology to control metal flow in orther to change of the cold forging from conventional deep drawing forming. This technology can be summarized the complex forming, which consists of bulk forming and sheet forming, and multi-action forging, which be performed double action press. The proposed technology is applied to hub clutch model which is part of auto-transmission for automobile. The purpose of this study is to investigate the material flow behavior of hub clutch through control the relative velocity ratio and the stroke of mandrel and punch using the flow forming technique. First of all, the finite element simulations are applied to analyse optimal process conditions to prevent flow defect(necking defect etc.) from non-uniform metal flow, then the results are compared with the plasticine model material experiments. The punch load for real material is predict from similarity law. Finally, the model material experiment results are in good agreement with the FE simulation ones.