• Title/Summary/Keyword: broad band amplifier

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Design of broad-band impedance matching networks for hybrid microwave amplifier applications (하이브리드 마이코로파 광대역 증폭기용 임피던스 정합회로 설계)

  • 김남태
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.5
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    • pp.11-17
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    • 1998
  • In this paper, the synthesis procedufe of impedance matching network is presented for broad-band microwave amplifier design, whereby amplifier operating in the octave bandwidth is designed and fabricated in detail. The transfer function of the matching netowrks is synthesized by chebyshev approximation and element values for the networks of specified topology are calculatd for various MILs and ripples. After the transistor is modeled by negative-image device model, the synthesis procedure for matching networks is applied to broad-band amplifier design which has electrical performance of about 12dB gain in 4 to 8GHz range. Experimental results obtained from the fabricated amplifier are shown to approach the electrical performance designed in the given frequency range. Construction of the impedance matching networks by transfer function synthesis is very useful method for the design of broad-band microwave amplifiers.

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Design of Broad Band Amplifier Using Feedback Technique

  • Kang, Tae-Shin;Rhee, Jin-Koo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.1
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    • pp.42-46
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    • 2003
  • In this paper, an MMIC broadband amplifier for wireless communication systems has been developed by using an active feedback method. This active feedback operates at much higher frequencies than a method by a spiral inductor feedback and its size is independent of the inductance value. The MMIC broadband amplifier was designed using a $0.5{\;}{\mutextrm{m}}$ MESFET library. The fabricated chip area was $1.4{\;}mm{\;}{\times}{\;}1.4{\;}mm. Measurement showed a gain of 18 dB with a gain flatness of ${\pm}3$ dB in a 1.5 GHz~3.5 GHz band. The maximum output power and the minimum noise figure were 14 dBm and 2.5 dB in the same band, respectively.

PHEMT MMIC Broad-Band Power Amplifier for LMDS (Ka 대역 광대역 MMIC 전력증폭기)

  • 백경식;김영기;맹성재;이진희;박철순
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.177-180
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    • 1999
  • A two-stage monolithic microwave integrated circuits (MMIC) broad-band power amplifier with AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been developed for the up-link and down-link applications for local multipoint distribution systems (LMDS) in the frequency range of 24~28㎓. The amplifier has a small signal gain of 18.6㏈ at 24.5㎓ and 16.7㏈ at 27.1㎓. It achieved output powers of 19.8㏈m with PAE of 19.8% at 24.5㎓ and 18.8㏈m at 27.1㎓.

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Design of High Efficiency Class-J mode Power Amplifier using GaN HEMT with Broad-band Characteristic (GaN HEMT를 이용한 광대역 고효율 Class-J 모드 전력증폭기 설계)

  • Kim, Jae-Duk;Kim, Hyoung-Jong;Shin, Suk-Woo;Kim, Sang-Hoon;Kim, Bo-Ki;Choi, Jin-Joo;Kim, Sun-Joo
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.10 no.5
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    • pp.71-78
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    • 2011
  • In this paper, we describe the design and implementation of a high efficiency and broad-band Class-J mode power amplifier using gallium nitride(GaN) high-electron mobility transistor(HEMT). The matching circuit of proposed class-J mode power amplifier for 2nd harmonic impedance designed to provide pure reactance alone. The measurement results show that output power of $40{\pm}1$ dBm, power-added efficiency of 50%, and drain efficiency of 60% for a continuous wave signal at 1.4 to 2.6 GHz.

Design of Broad Band RF Components for Partial Discharge Monitoring System (부분방전 모니터링 시스템을 위한 광대역 RF 소자설계 연구)

  • Lee, Je-Kwang;Ko, Jae-Hyeong;Kim, Koon-Tae;Kim, Hyeong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.12
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    • pp.2286-2292
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    • 2011
  • In this paper we present the design of Low Noise Amplifier(LNA), mixer and filter for RF front-end part of partial discharge monitoring system. The monitoring system of partial discharge in high voltage power machinery is used to prevent many kinds of industrial accidents, and is usually composed of three parts - sensor, RF front-end and digital microcontroller unit. In our study, LNA, mixer and filter are key components of the RF front-end. The LNA consists of common gate and common source-cascaded structure and uses the resistive feedback for broad band matching. A coupled line structure is utilized to implement the filter, of which size is reduced by the meander structure. The mixer is designed using dual gate structure for high isolation between RF and local oscillator signal.

The Design of 50MHz-3GHz Wide-band Amplifier IC Using SiGe HBT (SiGe HBT를 이용한 50MHz-3GHz 대역폭의 광대역 증폭기 IC 설계)

  • 이호성;박수균;김병성
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2001.11a
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    • pp.257-261
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    • 2001
  • This paper presents the implementation of wide-band RFIC amplifier operating from near 50MHz to 3GHz using Tachyonics SiGe HBT foundry. Voltage shunt feedback is used for the flat gain and the broad band impedance matching. Initial design parameters are calculated using the low frequency small signal analysis. Since the HBT model was not available at the design time, discrete tuning board was made for fine tuning in the low frequency range. Fabricated amplifier shows 12dB gain with 1dB fluctuation and PldB reaches 15dBm at 850MHz.

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60 GHz broad-band transceiver for wireless LAN (60 GHz 무선랜용 광대역 송ㆍ수신기)

  • 이문교;이복형;김성찬;김용호;이진구
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.40 no.11
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    • pp.34-41
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    • 2003
  • In this paper, 60GHz band transmitter and receiver for wireless LAN are designed and implemented using the broband amplifier and mixer fabricated by standard 0.1${\mu}{\textrm}{m}$ MIMIC process of MINT. Output power and gain of the RF transmitter are 0 ㏈m and 1.7㏈, respectively. Noise figure and gain of the receiver are 4.2㏈ and l5.7dB, respectively. Considering the sensitivity and LOS test, this system can communicate with BER of below than 10$^{-6}$ at a distance more than 35m. DSSS, which is strong for concealment and disturbance, is adopted.

The Design of 50 MHz~3 GHz Wide-band Amplifier IC using SiGe HBT (SiGe HBT를 이용한 50 MHz~3 GHz 대역폭의 광대역 증폭기 IC 설계)

  • 이호성;김병성;박수균
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.1
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    • pp.68-73
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    • 2002
  • This paper presents the implementation of wide-band RFIC amplifier operating from near 50 MHz to 3 GHz using Tachyonics SiGe HBT foundry. Voltage shunt feedback is used for the flat gain and the broad band impedance matching. Initial design parameters are calculated through the low frequency small signal analysis. Since the HBT model was not available at the design time, discrete tuning board was made for fine adjustment in the low frequency range. Fabricated amplifier shows 12 dB gain with 1 dB fluctuation and P1 dB reaches 15 dBm at 850 MHz.

A Novel Predistorter design using a Balanced Type IM3 Generator (평형 구조 혼변조 발생기를 이용한 전치왜곡 선형화기 설계)

  • 정형태;김상원;김철동;장익수
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.2
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    • pp.65-70
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    • 2004
  • This paper presents a novel linearization scheme for a nonlinear RF amplifier It is based on the amplitude modulation with envelope signal. The 3rd order distortion generator is composed of two FETs and it adopts a balanced structure for the purpose of main carrier cancellation. The amplitude and phase of the IM3 component can be controlled at RF band. This predistorter is implemented and tested at the KOREA PCS Tx. band (1840∼1870MHz). Experimental results of two-tone test show that the IM3 cancellation is achieved about 30-40 ㏈ for the wide dynamic range. The adjacent channel power ratio is improved by over 10 ㏈ at the broad-band CDMA signal with a peak to average power ratio of l0㏈, and this improvement is maintained through a wide range of output power levels.

A Research on a Cross Post-Distortion Balanced Linear Power Amplifier for Base-Station (기지국용 Cross Post-Distortion 평형 선형 전력 증폭기에 관한 연구)

  • Choi, Heung-Jae;Jeong, Hee-Young;Jeong, Yong-Chae;Kim, Chul-Dong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.11
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    • pp.1262-1270
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    • 2007
  • In this paper, we propose a new distortion cancellation mechanism for a balanced power amplifier structure using the carrier cancellation loop of a feedforward and post-distortion technique. The proposed cross post-distortion balanced linear amplifier can reduce nonlinear components as much as the conventional feedforward amplifier through the output dynamic range and broad bandwidth. Also the proposed system provides higher efficiency than the feedforward. The capacities of power amplifier and error power amplifier in the proposed system are analyzed and compared with those of feedforward amplifier. Also the operation mechanisms of the three kind loops are explained. The proposed cross post-distortion balanced linear power amplifier is implemented at the IMT-2000($f_0=2.14\;GHz$) band. With the commercial high power amplifiers of total power of 240 W peak envelope power fer base-station application, the adjacent channel leakage ratio measurement with wideband code division multiple access 4FA signal shows 18.6 dB improvement at an average output power of 40 dBm. The efficiency of fabricated amplifier Improves about 2 % than the conventional feedforward amplifier.