Proceedings of the Korea Electromagnetic Engineering Society Conference (한국전자파학회:학술대회논문집)
- 2001.11a
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- Pages.257-261
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- 2001
The Design of 50MHz-3GHz Wide-band Amplifier IC Using SiGe HBT
SiGe HBT를 이용한 50MHz-3GHz 대역폭의 광대역 증폭기 IC 설계
Abstract
This paper presents the implementation of wide-band RFIC amplifier operating from near 50MHz to 3GHz using Tachyonics SiGe HBT foundry. Voltage shunt feedback is used for the flat gain and the broad band impedance matching. Initial design parameters are calculated using the low frequency small signal analysis. Since the HBT model was not available at the design time, discrete tuning board was made for fine tuning in the low frequency range. Fabricated amplifier shows 12dB gain with 1dB fluctuation and PldB reaches 15dBm at 850MHz.
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