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The Design of 50 MHz~3 GHz Wide-band Amplifier IC using SiGe HBT  

이호성 (성균관대학교 전기전자 및 컴퓨터 공학부)
김병성 (성균관대학교 전기전자 및 컴퓨터 공학부)
박수균 (타키오닉스)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.13, no.1, 2002 , pp. 68-73 More about this Journal
Abstract
This paper presents the implementation of wide-band RFIC amplifier operating from near 50 MHz to 3 GHz using Tachyonics SiGe HBT foundry. Voltage shunt feedback is used for the flat gain and the broad band impedance matching. Initial design parameters are calculated through the low frequency small signal analysis. Since the HBT model was not available at the design time, discrete tuning board was made for fine adjustment in the low frequency range. Fabricated amplifier shows 12 dB gain with 1 dB fluctuation and P1 dB reaches 15 dBm at 850 MHz.
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